BL Galaxy Electrical Production specification
PNP Silicon Epitaxial Planar Transistor
BC856W/BC857W/BC858W
Document number: BL/SSSTF046 www.galaxycn.com
Rev.A 1
FEATURES
z Ideally suited for automatic insertion.
z Power dissipation.(PC=200mW)
APPLICATIONS
z General purpose switching and amplification application.
SOT-323
ORDERING INFORMATION
Type No. Marking Package Code
BC856W 3As/3Bs SOT-323
BC857W 3E/3F/3G SOT-323
BC858W 3J/3K/3L SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
VCBO
Collector-Base Voltage BC856W
BC857W
BC858W
-80
-50
-30
V
VCEO
Collector-Emitter Voltage BC856W
BC857W
BC858W
-65
-45
-30
V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -100 mA
PC Collector Dissipation 200 mW
Tj,Tstg Junction and Storage Temperature -65~150 ℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Pb
Lead-free