MCC
BCX70 Series
Electrical Characteristics(TJ= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
BCX70G VCE = 5 V, IC= 10 µA———
BCX70H VCE = 5 V, IC= 10 µA30 — —
BCX70J VCE = 5 V, IC= 10 µA40 — —
BCX70K VCE = 5 V, IC= 10 µA 100 — —
BCX70G VCE = 5 V, IC= 2 mA 120 — 220
DC Current Gain BCX70H hFE VCE = 5 V, IC= 2 mA 180 — 310 —
BCX70J VCE = 5 V, IC= 2 mA 250 — 460
BCX70K VCE = 5 V, IC= 2 mA 380 — 630
BCX70G VCE = 1 V, IC= 50 mA 50 — —
BCX70H VCE = 1 V, IC= 50 mA 70 — —
BCX70J VCE = 1 V, IC= 50 mA 90 — —
BCX70K VCE = 1 V, IC= 50 mA 100 — —
Collector-Emitter Saturat ion Voltage VCEsat IC= 10 mA, IB= 0.25 mA 50 — 350 mV
IC= 50 mA, IB= 1.25 mA 100 — 550
Base-Emitter Saturat ion Voltage VBEsat IC= 10 mA, IB= 0.25 mA 600 — 850 mV
IC= 50 mA, IB= 1.25 mA 700 — 1050
VCE = 5 V, IC= 2 mA 550 650 750
Base-Emitter Voltage VBE VCE = 5 V, IC= 10 µA — 520 — mV
VCE = 1 V, IC= 50 mA — 780 —
VCB = 45 V, VBE = 0 V — — 20 nA
Collector Cut-off Current ICBO VCB = 45 V, VBE = 0 V ——20µA
TA= 150°C
Emitter Cut-off Current IEBO VEB = 4 V, IC= 0 — — 20 nA
Gain-Bandwidth Product fTVCE = 5 V, IC= 10 mA 100 250 — MHz
f = 100 MHz
Collector-Base Capacitance CCBO VCB =10 V, f=1 MHz,I
E= 0 — 2.5 — pF
Emitter-Base Capacitance CEBO VEB = 0.5 V, f = 1 MHz,IC= 0—8—pF
VCE =5V, I
C= 200 µA,
Noise Figure F RS=2 kΩ, f = 1 kHz, — 2 6 dB
B = 200 Hz
BCX70G — 200
Small Signal Current Gain BCX70H hfe VCE = 5 V, IC= 2 mA, — 260
BCX70J f = 1.0 kHZ — 330
BCX70K — 520
Turn-on Time at RL= 990Ω(see fig. 1) ton VCC = 10 V, IC= 10 mA, — 85 150 ns
IB(on) = -IB(off) = 1 mA
Turn-off Time at RL= 990Ω(see fig. 1) toff VCC = 10 V, IC= 10 mA, — 480 800 ns
IB(on) = -IB(off) = 1 mA
Revision: B 2013/01/01
TM
Micro Commercial Components
www.mccsemi.com
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