VS-STPS40L15CWPbF, VS-STPS40L15CW-N3
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Revision: 11-Oct-11 1Document Number: 94331
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Schottky Rectifier, 2 x 20 A
FEATURES
• 125 °C TJ operation (VR < 5 V)
• Optimized for OR-ing applications
• Ultra low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-STPS40L15CW... center tap Schottky rectifier
module has been optimized for ultra low forward voltage
drop specifically for the OR-ing of parallel power supplies.
The proprietary barrier technology allows for reliable
operation up to 125 °C junction temperature. Typical
applications are in parallel switching power supplies,
converters, reverse battery protection, and redundant
power subsystems.
PRODUCT SUMMARY
Package TO-247AC
IF(AV) 2 x 20 A
VR15 V
VF at IFSee Electrical table
IRM max. 600 mA at 100 °C
TJ max. 125 °C
Diode variation Common cathode
EAS 10 mJ
Base
common
cathode
Common
cathode
2
2
13
Anode
1
Anode
2
TO-247AC
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 40 A
VRRM 15 V
IFSM tp = 5 μs sine 700 A
VF19 Apk, TJ = 125 °C (per leg, typical) 0.25 V
TJ- 55 to 125 °C
VOLTAGE RATINGS
PARAMETER SYMBOL TEST CONDITIONS VS-STPS40L15CWPBF VS-STPS40L15CW-N3 UNITS
Maximum DC reverse voltage VRTJ = 100 °C 15 15 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
per leg IF(AV) 50 % duty cycle at TC = 86 °C, rectangular waveform 20
A
per device 40
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
IFSM
5 µs sine or 3 µs rect. pulse Following any rated
load condition and
with rated VRRM
applied
700
10 ms sine or 6 ms rect. pulse 330
Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 2 A, L = 5 mH 10 mJ
Repetitive avalanche current per leg IAR Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 2A
VS-STPS40L15CWPbF, VS-STPS40L15CW-N3
www.vishay.com Vishay Semiconductors
Revision: 11-Oct-11 2Document Number: 94331
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
Maximum forward voltage drop per leg
See fig. 1 VFM (1)
19 A TJ = 25 °C -0.41
V
40 A - 0.52
19 A TJ = 125 °C 0.25 0.33
40 A 0.37 0.50
Reverse leakage current per leg
See fig. 2 IRM (1) TJ = 25 °C VR = Rated VR
-10
mA
TJ = 100 °C - 600
Threshold voltage VF(TO) TJ = TJ maximum 0.182 V
Forward slope resistance rt7.6 m
Maximum junction capacitance per leg CTVR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C - 2000 pF
Typical series inductance per leg LSMeasured lead to lead 5 mm from package body 8 - nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range TJ- 55 to 125 °C
Maximum storage temperature range TStg - 55 to 150
Maximum thermal resistance,
junction to case per leg RthJC
DC operation
See fig. 4 1.4
°C/W
Maximum thermal resistance,
junction to case per package DC operation 0.7
Typical thermal resistance,
case to heatsink RthCS Mounting surface, smooth and greased 0.24
Approximate weight 6g
0.21 oz.
Mounting torque minimum Non-lubricated threads 6 (5) kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-247AC (JEDEC) STPS40L15CW
VS-STPS40L15CWPbF, VS-STPS40L15CW-N3
www.vishay.com Vishay Semiconductors
Revision: 11-Oct-11 3Document Number: 94331
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
1
100
10
1000
IF - Instantaneous Forward Current (A)
VFM - Forward Voltage Drop (V)
0.2 0.4 0.6 0.81.0 1.2 1.4 1.6
0
TJ = 125 °C
TJ = 75 °C
TJ = 25 °C
0.1
1
10
100
1000
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
369 15
120
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
100
1000
10 000
CT - Junction Capacitance (pF)
VR - Reverse Voltage (V)
1051520
0
TJ = 25 °C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
100 10
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
VS-STPS40L15CWPbF, VS-STPS40L15CW-N3
www.vishay.com Vishay Semiconductors
Revision: 11-Oct-11 4Document Number: 94331
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Fig. 8 - Unclamped Inductive Test Circuit
70
75
80
85
90
100
95
Allowable Case Temperature (°C)
IF(AV) - Average Forward Current (A)
10 5 15 20
25
0
Square wave (D = 0.50)
0
2
6
12
10
8
4
14
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
1051520
3025
0
DC
RMS limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
100
1000
IFSM - Non-Repetitive Surge Current (A)
tp - Square Wave Pulse Duration (µs)
100 1000 10 000
10
At any rated load condition
and with rated VRRM applied
following surge
Current
monitor
High-speed
switch
D.U.T.
Rg = 25 Ω
+
Freewheel
diode Vd = 25 V
L
IRFP460
40HFL40S02
VS-STPS40L15CWPbF, VS-STPS40L15CW-N3
www.vishay.com Vishay Semiconductors
Revision: 11-Oct-11 5Document Number: 94331
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-STPS40L15CWPbF 25 500 Antistatic plastic tube
VS-STPS40L15CW-N3 25 500 Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95223
Part marking information TO-247AC PbF www.vishay.com/doc?95226
TO-247AC -N3 www.vishay.com/doc?95007
- Schottky STPS series
- Current ratings (40 = 40 A)
- L = Low forward voltage
- Voltage code (15 = 15 V)
- Package:
CW = TO-247
Device code
6
243 5 7
STPS 40 L 15 CW PbFVS-
1
-Vishay Semiconductors product
-
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
Environmental digit
2
3
4
5
6
7
1
Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 16-Jun-11 1Document Number: 95223
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DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC outline TO-247 with exception of dimension c
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.65 5.31 0.183 0.209 D2 0.51 1.30 0.020 0.051
A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 3
A2 1.50 2.49 0.059 0.098 E1 13.72 - 0.540 -
b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC
b1 0.99 1.35 0.039 0.053 FK 2.54 0.010
b2 1.65 2.39 0.065 0.094 L 14.20 16.10 0.559 0.634
b3 1.65 2.37 0.065 0.094 L1 3.71 4.29 0.146 0.169
b4 2.59 3.43 0.102 0.135 N 7.62 BSC 0.3
b5 2.59 3.38 0.102 0.133 P 3.56 3.66 0.14 0.144
c 0.38 0.86 0.015 0.034 P1 - 6.98 - 0.275
c1 0.38 0.76 0.015 0.030 Q 5.31 5.69 0.209 0.224
D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 1.78 0.216
D1 13.08 - 0.515 - 4 S 5.51 BSC 0.217 BSC
0.10 AC
M M
E
N
(2)
(3)
(4)
(4)
(2) R/2
B
2 x R
S
D
See view B
2 x e
b4
3 x b
2 x b2
L
C
(5) L1
123
Q
D
A
A2
A
A
A1
C
Ø K BD
M M
A
(6) Ø P (Datum B)
FP1
D1 (4)
4
E1
0.01 BD
M M
View A - A
Thermal pad
D2
DDE E
CC
View B
(b1, b3, b5) Base metal
c1
(b, b2, b4)
Section C - C, D - D, E - E
(c)
Planting Lead assignments
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
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Revision: 12-Mar-12 1Document Number: 91000
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