BAV19WS-V-G, BAV20WS-V-G, BAV21WS-V-G
www.vishay.com Vishay Semiconductors
Rev. 1.0, 16-May-12 1Document Number: 83423
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Switching Diodes, High Voltage
MECHANICAL DATA
Case: SOD-323
Weight: approx. 4 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
Silicon epitaxial planar diodes
For general purpose
AEC-Q101 qualified
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Note
(1) Valid provided that leads are kept at ambient temperature
Note
(1) Valid provided that leads are kept at ambient temperature
PARTS TABLE
PART TYPE
DIFFERENTIATION ORDERING CODE TYPE MARKING INTERNAL
CONSTRUCTION REMARKS
BAV19WS-V-G VR = 100 V BAV19WS-V-G-18 or BAV19WS-V-G-08 AS Single diode Tape and reel
BAV20WS-V-G VR = 150 V BAV20WS-V-G-18 or BAV20WS-V-G-08 AT Single diode Tape and reel
BAV21WS-V-G VR = 200 V BAV21WS-V-G-18 or BAV21WS-V-G-08 AU Single diode Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL SYMBOL VALUE UNIT
Continuous reverse voltage
BAV19WS-V-G VR100 V
BAV20WS-V-G VR150 V
BAV21WS-V-G VR200 V
Repetitive peak reverse voltage
BAV19WS-V-G VRRM 120 V
BAV20WS-V-G VRRM 200 V
BAV21WS-V-G VRRM 250 V
Forward continuous current (1) IF250 mA
Rectified current (average) half wave
recitification with resistive load (1) IF(AV) 200 mA
Repetitive peak forward current (1) f 50 Hz, = 180 °C IFRM 625 mA
Surge forward current t < 1 s, TJ = 25 °C IFSM 1A
Power dissipation (1) Ptot 200 mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air (1) RthJA 650 K/W
Junction temperature (1) Tj150 °C
Storage temperature range (1) Tstg - 65 to + 175 °C
BAV19WS-V-G, BAV20WS-V-G, BAV21WS-V-G
www.vishay.com Vishay Semiconductors
Rev. 1.0, 16-May-12 2Document Number: 83423
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 2 - Admissible Forward Current vs. Ambient Temperature
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
Fig. 4 - Dynamic Forward Resistance vs. Forward Current
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 100 mA VF1V
IF = 200 mA VF1.25 V
Leakage current
VR = 100 V BAV19WS-V-G IR100 nA
VR = 100 V, Tj = 100 °C BAV20WS-V-G IR15 μA
VR = 150 V BAV21WS-V-G IR100 nA
VR = 150 V, Tj = 100 °C BAV19WS-V-G IR15 μA
VR = 200 V BAV20WS-V-G IR100 nA
VR = 200 V, Tj = 100 °C BAV21WS-V-G IR15 μA
Dynamic Forward resistance IF = 10 mA rf5
Diode capacitance VR = 0 V, f = 1 MHz CD1.5 pF
Reverse recovery time IF = 30 mA, IR = 30 mA,
iR = 3 mA, RL = 100 trr 50 ns
18858
1000
100
10
1
0.1
0.01
I- Forward Current (mA)
F
0 0.4 0.6 0.8 10.2
V
F
- Forward Voltage (V)
Tj = 100 °C
25 °C
0.1
0.2
0.3
0
0 30 60 90 120 150
18859
T
amb
- Ambient Temperature (°C)
I , I - Admissible Forward Current (A)
OF
ICurrent (rectif.) O
DC current IF
200
18864
T
amb
- Ambient Temperature (°C)
250
200
150
100
50
20 40 60 80 100 120 140 160 1800
0
P - Admissible Power Dissipation (W)
tot
r - Dynamic Forward Resistance
f(Ω)
10
100
1
1 10010
18861 IF- Forward Current (mA)
BAV19WS-V-G, BAV20WS-V-G, BAV21WS-V-G
www.vishay.com Vishay Semiconductors
Rev. 1.0, 16-May-12 3Document Number: 83423
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Leakage Current vs. Junction Temperature Fig. 6 - Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): SOD-323
0.1
18862-2
1
10
100
1000
0 40 80 120 160 200
IR(Tj)/IR (25 °C) - Leakage Current
Tj - Junction Temperature (°C)
Reverse Voltage
BAV19WS-V-G VR = 100 V
BAV20WS-V-G VR = 150 V
BAV21WS-V-G VR = 200 V
18863
1100.1
0.8
0.6
0.4
1.4
1.2
1.0
0.2
0
100
C - Diode Capacitance (pF)
D
VR- Reverse Voltage (V)
2.0
1.8
1.6
=25
°CTj
Foot print recommendation:
Rev. 5 - Date: 23.Sept.2009
17443
Document no.:S8-V-3910.02-001 (4)
0.6 (0.024)
0.6 (0.024)0.6 (0.024)
1.6 (0.063)
0.10 (0.004)
Cathode bar
0.20 (0.008)
0.40 (0.016)
2.50 (0.098)
1.1 (0.043)
1.5 (0.059)
2.85 (0.112)
1.60 (0.063)
1.95 (0.077)
0.15 (0.006)
0.1 (0.004) max.
1.15 (0.045)
0.8 (0.031)
Created - Date: 24.August.2004
0.40 (0.016)
0.25 (0.010)
0.2 (0.008)
0° to 8°
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Revision: 12-Mar-12 1Document Number: 91000
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