BAV19WS-V-G, BAV20WS-V-G, BAV21WS-V-G www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, High Voltage FEATURES * Silicon epitaxial planar diodes * For general purpose * AEC-Q101 qualified * Material categorization: For definitions of compliance www.vishay.com/doc?99912 please see MECHANICAL DATA Case: SOD-323 Weight: approx. 4 mg Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box PARTS TABLE PART TYPE DIFFERENTIATION ORDERING CODE TYPE MARKING INTERNAL CONSTRUCTION REMARKS Tape and reel BAV19WS-V-G VR = 100 V BAV19WS-V-G-18 or BAV19WS-V-G-08 AS Single diode BAV20WS-V-G VR = 150 V BAV20WS-V-G-18 or BAV20WS-V-G-08 AT Single diode Tape and reel BAV21WS-V-G VR = 200 V BAV21WS-V-G-18 or BAV21WS-V-G-08 AU Single diode Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT BAV19WS-V-G VR 100 V BAV20WS-V-G VR 150 V BAV21WS-V-G VR 200 V BAV19WS-V-G VRRM 120 V BAV20WS-V-G VRRM 200 V BAV21WS-V-G VRRM 250 V IF 250 mA IF(AV) 200 mA f 50 Hz, = 180 C IFRM 625 mA t < 1 s, TJ = 25 C IFSM 1 A Ptot 200 mW Continuous reverse voltage Repetitive peak reverse voltage SYMBOL Forward continuous current (1) Rectified current (average) half wave recitification with resistive load (1) Repetitive peak forward current (1) Surge forward current Power dissipation (1) Note (1) Valid provided that leads are kept at ambient temperature THERMAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION Thermal resistance junction to ambient air (1) Junction temperature (1) Storage temperature range (1) SYMBOL VALUE UNIT RthJA 650 K/W Tj 150 C Tstg - 65 to + 175 C Note (1) Valid provided that leads are kept at ambient temperature Rev. 1.0, 16-May-12 Document Number: 83423 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAV19WS-V-G, BAV20WS-V-G, BAV21WS-V-G www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL IF = 100 mA Forward voltage IF = 200 mA Leakage current Reverse recovery time MIN. TYP. UNIT 1 V VF 1.25 V VR = 100 V BAV19WS-V-G IR 100 nA VR = 100 V, Tj = 100 C BAV20WS-V-G IR 15 A VR = 150 V BAV21WS-V-G IR 100 nA VR = 150 V, Tj = 100 C BAV19WS-V-G IR 15 A VR = 200 V BAV20WS-V-G IR 100 nA VR = 200 V, Tj = 100 C BAV21WS-V-G IR 15 A IF = 10 mA rf 5 VR = 0 V, f = 1 MHz CD 1.5 pF IF = 30 mA, IR = 30 mA, iR = 3 mA, RL = 100 trr Dynamic Forward resistance Diode capacitance MAX. VF 50 ns TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) Ptot - Admissible Power Dissipation (W) I F - Forward Current (mA) 1000 Tj = 100 C 100 10 25 C 1 0.1 0.01 0 0.2 0.4 0.6 0.8 0.2 DC current IF Current (rectif.) I O 0.1 0 18859 60 90 120 50 0 0 Tamb - Ambient Temperature (C) 20 40 60 80 100 120 140 160 180 200 Tamb - Ambient Temperature (C) 100 10 1 1 150 Fig. 2 - Admissible Forward Current vs. Ambient Temperature Rev. 1.0, 16-May-12 100 Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature rf - Dynamic Forward Resistance () I O , I F - Admissible Forward Current (A) 0.3 30 150 18864 Fig. 1 - Forward Current vs. Forward Voltage 0 200 1 VF - Forward Voltage (V) 18858 250 18861 10 100 IF - Forward Current (mA) Fig. 4 - Dynamic Forward Resistance vs. Forward Current Document Number: 83423 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAV19WS-V-G, BAV20WS-V-G, BAV21WS-V-G www.vishay.com Vishay Semiconductors 100 10 Reverse Voltage BAV19WS-V-G VR = 100 V 1 2.0 1.8 CD - Diode Capacitance (pF) IR(Tj)/IR (25 C) - Leakage Current 1000 BAV20WS-V-G VR = 150 V 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 BAV21WS-V-G VR = 200 V 0.1 0 40 80 120 160 200 Tj - Junction Temperature (C) 18862-2 T j = 25 C 1 Fig. 5 - Leakage Current vs. Junction Temperature 10 100 VR - Reverse Voltage (V) 18863 Fig. 6 - Capacitance vs. Reverse Voltage 0.1 (0.004) max. 0 to 8 0.15 (0.006) 0.10 (0.004) 0.2 (0.008) 0.8 (0.031) 1.15 (0.045) PACKAGE DIMENSIONS in millimeters (inches): SOD-323 0.40 (0.016) 0.25 (0.010) 1.95 (0.077) 1.60 (0.063) 2.50 (0.098) 1.1 (0.043) 2.85 (0.112) 1.5 (0.059) 0.40 (0.016) 0.20 (0.008) Cathode bar Foot print recommendation: Document no.:S8-V-3910.02-001 (4) Created - Date: 24.August.2004 Rev. 5 - Date: 23.Sept.2009 17443 Rev. 1.0, 16-May-12 1.6 (0.063) 0.6 (0.024) 0.6 (0.024) 0.6 (0.024) Document Number: 83423 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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