DATA SH EET
Product data sheet
Supersedes data of 1999 Apr 26 2000 Nov 15
DISCRETE SEMICONDUCTORS
BC856T; BC857T series
PNP general purpose transistors
M3D173
2000 Nov 15 2
NXP Semiconductors Product data sheet
PNP general purpose transistors BC856T; BC857T
series
FEATURES
•Low current (ma x. 10 0 mA)
•Low voltage (max. 65 V).
APPLICATIONS
•General purpose switching and amplification, especially
in portable equi pme nt .
DESCRIPTION
PNP transistor in an SC-75 (SOT416) plastic package.
NPN complements: BC846T; BC847T series.
MARKING
PINNING
TYPE NUMBER MARKING CODE
BC856AT 3A
BC856BT 3B
BC857AT 3E
BC857BT 3F
BC857CT 3G
PIN DESCRIPTION
1base
2emitter
3collector
handbook, halfpage
MAM362
1
2
3
Top view
12
3
Fig.1 Simplified outline (SC-75; SOT416) and
symbol.
LIMITING VALUES
In accordance with th e A bsolute Max i mum Rating Sys tem (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base volta ge open emitter
BC856AT; BC856BT − −80 V
BC857AT; BC857BT; BC857CT − −50 V
VCEO collector-emitter voltage open base
BC856AT; BC856BT − −65 V
BC857AT; BC857BT; BC857CT − −45 V
VEBO emitter-base voltage open collector − −5 V
ICcollector current (DC) − −100 mA
ICM peak collector current − −200 mA
IBM peak base current − −100 mA
Ptot total power dissipation Tamb ≤ 25 °C; note 1 −150 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
2000 Nov 15 3
NXP Semiconductors Pr oduct data shee t
PNP general purpose transistors BC856T; BC857T series
THERMAL CHARACTE RISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient in free air; note 1 833 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector-base cut-off current VCB = −30 V; IE = 0 − − −15 nA
VCB = −30 V; IE = 0; Tj = 150 °C− − −5μA
IEBO emitter cut-off current VEB = −5 V; IC = 0 − − −100 nA
hFE DC current gain VCE = −5 V; IC = −2 mA
BC856AT; BC857AT 125 −250
BC856BT; BC857BT 220 −475
BC857CT 420 −800
VCEsat collector-emitter saturation
voltage IC = −10 mA; IB = −0.5 mA − − −200 mV
IC = −100 mA; IB = −5 mA; note 1 − − −400 mV
VBE base-emitter vo ltage IC = −2 mA; VCE = −5 V −580 − −700 mV
IC = −10 mA; VCE = −5 V − − −770 mV
Cccollector capacitance VCB = −10 V; f = 1 MHz; IE = ie = 0 − − 2.5 pF
Ceemitter cap a citance VEB = −0.5 V; f = 1 MHz; IC = ic = 0 −10 −pF
fTtransition frequen c y IC = −10 mA; VCE = −5 V;
f = 100 MHz 100 − − MHz
Fnoise figure IC = −200 μA; VCE = −5 V;
RS = 2 kΩ; f = 1 kHz; B = 200 Hz − − 10 dB
2000 Nov 15 4
NXP Semiconductors Pr oduct data shee t
PNP general purpose transistors BC856T; BC857T series
GRAPHICAL INFORMATION BC857AT
handbook, halfpage
0
200
300
400
500
hFE
100
MGT711
−10−2−10−1−1−10 −102−103
IC (mA)
(1)
(2)
(3)
Fig.2 DC current gain; typical values.
VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
handbook, halfpage
0
−1200
−1000
−800
−600
−400
−200
MGT712
−10
−2
−10
−1
−1−10 −10
2
−10
3
IC (mA)
VBE
(mV)
(1)
(2)
(3)
Fig.3 Base-emitte r voltage as a function of
collector current; typical values.
VCE = −5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
handbook, halfpage
−10
4
−10
3
−10
2
−10
MGT713
−10
−1
−1−10 −10
2
−10
3
IC (mA)
VCEsat
(mV)
(1)
(2)(3)
Fig.4 Collector-emitter satur ation voltage as a
function of collector current; typical values.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
handbook, halfpage
MGT714
−10
−1
−1−10 −10
2
−10
3
IC (mA)
0
−1200
−1000
−800
−600
−400
−200
VBEsat
(mV)
(1)
(2)
(3)
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
2000 Nov 15 5
NXP Semiconductors Pr oduct data shee t
PNP general purpose transistors BC856T; BC857T series
GRAPHICAL INFORMATION BC857B T
handbook, halfpage
0
400
600
800
1000
hFE
200
MGT715
−10−2−10−1−1−10 −102−103
IC (mA)
(1)
(2)
(3)
Fig.6 DC current gain; typical values.
VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
handbook, halfpage
0
−1200
−1000
−800
−600
−400
−200
MGT716
−10
−2
−10
−1
−1−10 −10
2
−10
3
IC (mA)
VBE
(mV)
(1)
(2)
(3)
Fig.7 Base-emitte r voltage as a function of
collector current; typical values.
VCE = −5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
handbook, halfpage
−10
4
−10
3
−10
2
−10
MGT717
−10
−1
−1−10 −10
2
−10
3
IC (mA)
VCEsat
(mV)
(1)
(2)
(3)
Fig.8 Collector-emitter satur ation voltage as a
function of collector current; typical values.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
handbook, halfpage
MGT718
−10
−1
−1−10 −10
2
−10
3
IC (mA)
0
−1200
−1000
−800
−600
−400
−200
VBEsat
(mV)
(1)
(2)
(3)
Fig.9 Base-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
2000 Nov 15 6
NXP Semiconductors Pr oduct data shee t
PNP general purpose transistors BC856T; BC857T series
GRAPHICAL INFORMATION BC857C T
handbook, halfpage
0
400
600
800
1000
hFE
200
MGT719
−10−2−10−1−1−10 −102−103
IC (mA)
(1)
(2)
(3)
Fig.10 DC current gain; typical values.
VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
handbook, halfpage
0
−1200
−1000
−800
−600
−400
−200
MGT720
−10
−1
−1−10 −10
2
−10
3
IC (mA)
VBE
(mV)
(1)
(2)
(3)
Fig.11 Base-emitter voltage as a func tion of
collector current; typical values.
VCE = −5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
handbook, halfpage
−10
4
−10
3
−10
2
−10
MGT721
−10
−1
−1−10 −10
2
−10
3
IC (mA)
VCEsat
(mV)
(1)
(2)
(3)
Fig.12 Collector-emitter saturation voltag e as a
function of collector current; typical values.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
handbook, halfpage
MGT722
−10
−1
−1−10 −10
2
−10
3
IC (mA)
0
−1200
−1000
−800
−600
−400
−200
VBEsat
(mV)
(1)
(2)
(3)
Fig.13 Base-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
2000 Nov 15 7
NXP Semiconductors Pr oduct data shee t
PNP general purpose transistors BC856T; BC857T series
PACKAGE OUTLINE
UNIT A1
max bpcDEe
1
H
E
L
p
Qw
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.1 0.30
0.15 0.25
0.10 1.8
1.4 0.9
0.7 0.5
e
11.75
1.45 0.2
v
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15 0.23
0.13
SOT416 SC-75
w
M
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
EAB
B
v
M
A
0 0.5 1 mm
scale
A
0.95
0.60
c
X
12
3
Plastic surface mounted package; 3 leads SOT41
6
97-02-28
2000 Nov 15 8
NXP Semiconductors Pr oduct data shee t
PNP general purpose transistors BC856T; BC857T series
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completin g a design.
2. The prod uct status of devi ce(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on th e Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the produc t specification.
DISCLAIMERS
General ⎯ Information in this document is believed to be
accurate and reliable . H ow ev er, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequenc es of use of such informa tion.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this doc ument, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereo f.
Suitability for use ⎯ NXP Semiconductors products are
not designed, au thorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in pe rs onal injury, death or seve re
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefor e s uc h inclusion and/or use is at
the customer’s own risk .
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification .
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any incons istency or conflict between information
in this document an d such terms and conditio ns, the latter
will prevail.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for accept ance or the grant, c onveyance or
implication of any license under any copyrights, patents or
other industr i al or inte llectual property ri gh ts.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national author ities.
Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values an d
Characteristics sections of this docu ment, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
Contact information
For additional information p lease visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information pr e sent ed in this document d oes not form part o f an y quotation or cont ra ct, is b elieve d t o b e a ccur ate a nd re li a ble and may be chan ged
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or in tellectual property rights.
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No chan ges were
made to the content, except for the legal definitions and disclaimers.
Printed in The Netherlands 613514/03/pp9 Date of release: 2000 Nov 15 Document orde r number: 9397 750 07525
