DATA SH EET
Product data sheet
Supersedes data of 1999 May 31
2004 Jan 16
DISCRETE SEMICONDUCTORS
BCX17; BCX18
PNP general purpose transistors
2004 Jan 16 2
NXP Semiconductors Product data sheet
PNP general purpose transistors BCX17; BCX18
FEATURES
High current (max. 500 mA)
Low voltage (max. 45 V).
APPLICATIONS
Saturated switching and driver applications e.g . for
industrial service
Thick and thin-film circuits.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complement: BCX19.
MARKING
Note
1. * = p : Made in Hong Kong .
* = t : Made in Malaysia.
* = W : Made in China.
PINNING
TYPE NUMBER MARKING CODE(1)
BCX17 T1*
BCX18 T2*
PIN DESCRIPTION
1base
2emitter
3collector
Fig.1 Simplified outline (SOT23 ) and symbo l .
handbook, halfpage
21
3
MAM256
Top view
2
3
1
ORDERING INFORMATION
TYPE
NUMBER PACKAGE
NAME DESCRIPTION VERSION
BCX17 plastic surface mounted p a ckage; 3 leads SOT23
BCX18
2004 Jan 16 3
NXP Semiconductors Pr oduct data shee t
PNP general purpose transistors BCX17; BCX18
LIMITING VALUES
In accordance with th e Absolute Ma ximum Ratin g System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit boar d.
THERMAL CHARACTE RISTICS
Note
1. Transistor mounted on an FR4 printed-circuit boar d.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base volta ge open emitter
BCX17 50 V
BCX18 30 V
VCEO collector-emitter voltage open base
BCX17 45 V
BCX18 25 V
VEBO emitter-base voltage open collector 5 V
ICcollector current (DC) 500 mA
ICM peak collector current 1 A
IBM peak base current 200 mA
Ptot total power dissipation Tamb 25 °C; note 1 250 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb operating ambient temperature 65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient note 1 500 K/W
2004 Jan 16 4
NXP Semiconductors Pr oduct data shee t
PNP general purpose transistors BCX17; BCX18
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
Note
1. VBE decreases by approximately 2 mV/°C with increasing temperatu re.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 20 V −−−100 nA
IE = 0; VCB = 20 V; Tj = 150 °C−−−5μA
IEBO emitter cut-off current IC = 0; VEB = 5 V −−−100 nA
hFE DC current gain IC = 100 mA; VCE = 1 V 100 600
IC = 300 mA; VCE = 1 V 70
IC = 500 mA; VCE = 1 V 40
VCEsat collector-emitter saturation voltage IC = 500 mA; IB = 50 mA −−−620 mV
VBE base-emitter voltage IC = 500 mA; VCE = 1 V; note 1 −−−1.2 V
Cccollector cap a citance IE = Ie = 0; VCB = 10 V; f = 1 MHz 9pF
fTtransition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz 80 MHz
2004 Jan 16 5
NXP Semiconductors Pr oduct data shee t
PNP general purpose transistors BCX17; BCX18
PACKAGE OUTLINE
UNIT A
1
max. b
p
cDE e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT2
3
2004 Jan 16 6
NXP Semiconductors Pr oduct data shee t
PNP general purpose transistors BCX17; BCX18
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product s ta tus of device(s ) described in this document may have changed since this do cument was publishe d
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specificat ion for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product spe cific ation.
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Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification .
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other co nditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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http://www.nxp.com/profile/terms, including those
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infringement and limitation of liability, unless explicitly
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Quick refer ence data The Quick reference data is an
extract of th e product data given in the Limiting values an d
Characteristics sections of this docu ment, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
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© NXP B.V. 2009
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the technical content, exc ept for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R75/04/pp7 Date of release: 2004 Jan 16 Document orde r number: 9397 750 12406