NPN SILICON TRANSISTOR DESCRIPTION 4.700.185) Loa os " 10.200.4) 36 BD437 is silicon epitaxial-base NPN ro Tana | 1.40.55) power transistor, intended for use in ; GF ee 6026) medium power linear and switching io : _t applications. 60.63? | 4.700.189) TTT | i+ sd oyna COADIN, | it 1.460.055) I ABSOLUTE MAXIMUM RATINGS | -Fosco> Collector-Base Voltage VCBO 5,08(0.2) 45V Collector-Emitter Voltage VCES 45V Collector-Emitter Voltage VCEO 45V Emitter-Base Voltage VEBO 5V Collector Current IC 4A Collector Peak Current (t<10ms) ICM 7A Continuous Power Dissipation Pd 36W Operating & Storage Junction Temperature Tj, Tstg -65 to +150C ELECTRO-OPTICAL CHARACTERISTICS (Ta=25C) PARAMETER SYMBOL | MIN TYP MAX, UNIT CONDITIONS Collector Cutoff Current ICBO 100 pA |VCB=45V =0 Collector Cutoff Current ICES 100 nA |VCE=45V VBE=0 Emitter Cutoff Current IEBO 1 mA |VEB=5V IC=0 Collector-Emitter Breakdown Voltage | LVCEO* | 45 Vv |IC=10mA IB=0 Collector-Emitter Saturation Voltage | VCE(sat)* 0.6 Vo IC=2A IB=0.2A Base-Emitter Voltage VBE* 1.2 VV IC=2A VCE=1V D.C. Current Gain HFE* 30 130 IC=10mA VCE=5V 85 140 ICc=500mA VCE=1V 40 IC=2A VCE=1V Current Gain Bandwidth Product fT* 3 MHz |IC=250mA VCE=1V _* Pulse Test : Pulse Width <300ps, Duty Cycle <2%. MICRO ELECTRONICS LID. 32#+# BRS) A 38, Hung To Road, Microtron Building, Kwun Tong, Kowloon, Hong Kong. : Kwun Tong P.O. Box 69477 Hong Kong. Fax No, 2341 0321 Telex: 43510 Micro Hx. Tel: 2343 01815