DATA SH EET
Product specification
Supersedes data of April 1982 1996 Jun 07
DISCRETE SEMICONDUCTORS
BYV95 series
Fast soft-recovery
controlled avalanche rectifiers
handbook, 2 columns
M3D116
1996 Jun 07 2
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers BYV95 series
FEATURES
•Glass passivated
•High maximum operating
temperature
•Low leakage current
•Excellent stability
•Guaranteed avalanche energy
absorption capability
•Available in ammo-pack.
DESCRIPTION
Rugged glass SOD57 package,
using a high temperature alloyed
construction. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
Fig.1 Simplified outline (SOD57) and symbol.
2/3 page (Datasheet)
MAM047
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage
BYV95A −200 V
BYV95B −400 V
BYV95C −600 V
VRcontinuous reverse voltage
BYV95A −200 V
BYV95B −400 V
BYV95C −600 V
IF(AV) average forward current Ttp =65°C; lead length = 10 mm
see Fig. 2;
averaged over any 20 ms period;
see also Fig. 6
−1.5 A
Tamb =65°C; PCB mounting (see
Fig.11); see Fig. 3;
averaged over any 20 ms period;
see also Fig. 6
−0.8 A
IFRM repetitive peak forward current Ttp =65°C; see Fig. 4 −17 A
Tamb =65°C; see Fig. 5 −9A
I
FSM non-repetitive peak forward current t = 10 ms half sine wave;
Tj=T
j max prior to surge;
VR=V
RRMmax
−35 A
ERSM non-repetitive peak reverse
avalanche energy L = 120 mH; Tj=T
j max prior to
surge; inductive load switched off −10 mJ
Tstg storage temperature −65 +175 °C
Tjjunction temperature see Fig. 7 −65 +175 °C
1996 Jun 07 3
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers BYV95 series
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11.
For more information please refer to the
“General Part of associated Handbook”
.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VFforward voltage IF= 3 A; Tj=T
j max; see Fig. 8 −−1.35 V
IF= 3 A; see Fig. 8 −−1.60 V
V(BR)R reverse avalanche
breakdown voltage IR= 0.1 mA
BYV95A 300 −−V
BYV95B 500 −−V
BYV95C 700 −−V
I
Rreverse current VR=V
RRMmax;
see Fig. 9 −−1µA
V
R
=V
RRMmax; Tj= 165 °C;
see Fig. 9 −−150 µA
trr reverse recovery time when switched from IF= 0.5 A
to IR= 1 A; measured at
IR= 0.25 A; see Fig. 12
−−250 ns
Cddiode capacitance f = 1 MHz; VR= 0 V; see Fig. 10 −45 −pF
maximum slope of
reverse recovery current when switched from IF= 1 A to
VR≥30 V and dIF/dt = −1A/µs;
see Fig.13
−−7A/µs
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 46 K/W
Rth j-a thermal resistance from junction to ambient note 1 100 K/W
dIR
dt
--------
1996 Jun 07 4
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers BYV95 series
GRAPHICAL DATA
a = 1.42; VR=V
RRMmax;δ= 0.5.
Switched mode application.
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
handbook, halfpage
0 200
2.0
0
0.4
MGC581
0.8
1.2
1.6
100
IF(AV)
Ttp ( C)
(A)
o
lead length 10 mm
a = 1.42; VR=V
RRMmax;δ= 0.5.
Device mounted as shown in Fig.11.
Switched mode application.
Fig.3 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
handbook, halfpage
0
1.2
IF(AV)
0.8
0.4
0200
MGC580
100 Tamb ( C)
(A)
o
Ttp =65°C; Rth j-tp = 46 K/W.
VRRMmax during 1 −δ; curves include derating for Tj max at VRRM = 600 V.
Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
20
IFRM
0
10 210 111010
210 tp (ms)
3104
MGC578
4
8
12
16
0.1
0.2
1
(A) δ =
0.05
0.5
1996 Jun 07 5
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers BYV95 series
Tamb =65°C; Rth j-a = 100 K/W.
VRRMmax during 1 −δ; curves include derating for Tj max at VRRM = 600 V.
Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
10
IFRM
0
10 210 111010
210 tp (ms)
3104
MGC579
2
4
6
8
0.1
0.2
1
(A)
δ =
0.05
0.5
a=I
F(RMS)/IF(AV); VR=V
RRMmax;δ= 0.5.
Fig.6 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
handbook, halfpage
0
3
2
1.57
1.42
P
(W)
1
012
MGC576
IF(AV) (A)
a = 3 2.5 2
Solid line = VR.
Dotted line = VRRM;δ= 0.5.
Fig.7 Maximum permissible junction temperature
as a function of reverse voltage.
handbook, halfpage
0 200 400 800
200
0
MGC575
600
100
Tj
VR (V)
BAC
( C)
o
1996 Jun 07 6
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers BYV95 series
Dotted line: Tj= 175 °C.
Solid line: Tj=25°C.
Fig.8 Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
0123
8
6
I
F
V
F
(V)
2
0
4
MGC577
(A)
Fig.9 Reverse current as a function of junction
temperature; maximum values.
handbook, halfpage
103
102
10
1
10 12000
MGC574
100 Tj ( C)
o
IR
(µA)
VR=V
RRMmax.
f = 1 MHz; Tj=25°C.
Fig.10 Diode capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
1
MGC582
10 102103
1
102
10
Cd
VR (V)
(pF)
Fig.11 Device mounted on a printed-circuit board.
Dimensions in mm.
handbook, halfpage
MGA200
3
2
7
50
25
50
1996 Jun 07 7
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers BYV95 series
Fig.12 Test circuit and reverse recovery time waveform and definition.
Input impedance oscilloscope: 1 MΩ, 22 pF; tr≤7 ns.
Source impedance: 50 Ω; tr≤15 ns.
handbook, full pagewidth
10 Ω
1 Ω
50 Ω
25 V
DUT
MAM057
+trr
0.5
0
0.5
1.0
IF
(A)
IR
(A)
t
0.25
Fig.13 Reverse recovery definitions.
a
ndbook, halfpage
10%
100%
dI
dt
t
trr
IF
IR
MGC499
F
dI
dt
R
1996 Jun 07 8
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers BYV95 series
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Fig.14 SOD57.
Dimensions in mm.
The marking band indicates the cathode.
handbook, full pagewidth
,
,
,
3.81
max
MBC880
ka
28 min28 min 4.57
max
0.81
max
