© 2008 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Maximum Ratings
VCES TC = 25°C to 150°C 1700 V
VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V
VGES Continuous ± 20 V
VGEM Transient ± 30 V
IC25 TC = 25°C 57 A
IC90 TC = 90°C 32 A
ICM TC = 25°C, 1ms 300 A
SSOA VGE = 15V, TVJ = 125°C, RG = 10Ω ICM = 100 A
(RBSOA) Clamped inductive load VCES ≤ 1350 V
PCTC = 25°C 200 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from case for 10s 300 °C
TSOLD Plastic body for 10 seconds 260 °C
FCMounting force 20..120 / 4.5..27 Nm/lb.in.
VISOL 50/60 Hz, RMS t = 1min 2500 V~
IISOL ≤ 1mA t = 1s 3000 V~
Weight 5 g
DS100043(10/08)
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
BVCES IC = 250μA, VGE = 0V 1700 V
VGE(th) IC = 250μA, VCE = VGE 2.5 5.5 V
ICES VCE = 0.8 • VCES 50 μA
VGE = 0V TJ = 125°C 1.5 mA
IGES VCE = 0V, VGE = ± 20V ±100 nA
VCE(sat) IC = 42A, VGE = 15V, Note 1 2.9 V
TJ = 125°C 2.7 V
VCES = 1700V
IC90 = 32A
VCE(sat) ≤≤
≤≤
≤ 2.9V
High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
Features
zSilicon chip on Direct-Copper Bond
(DCB) substrate
zIsolated mounting surface
z2500V electrical isolation
Advantages
zLow gate drive requirement
zHigh power density
Applications:
zSwitched-mode and resonant-mode
power supplies
zUninterruptible power supplies (UPS)
zLaser generator
zCapacitor discharge circuit
zAC switches
IXBR42N170
ISOPLUS247TM
E153432
Isolated Tab
G
CE
G = Gate E = Emitter
C = Collector
Preliminary Technical Information
IXYS reserves the right to change limits, test conditions and dimensions.
IXBR42N170
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
gfS IC = 42A, VCE = 10V, Note 1 24 32 S
Cies 3990 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 225 pF
Cres 70 pF
Qg 188 nC
Qge IC = 42A, VGE = 15V, VCE = 0.5 • VCES 29 nC
Qgc 76 nC
td(on) 37 ns
tr 139 ns
td(off) 340 ns
tf 665 ns
td(on) 36 ns
tr 188 ns
td(off) 330 ns
tf 740 ns
RthJC 0.62 °C/W
RthCS 0.15 °C/W
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Resistive Switching times, TJ = 125°C
IC = 42A, VGE = 15V
VCE = 850V, RG = 10Ω
Resistive Switching times, TJ = 25°C
IC = 42A, VGE = 15V
VCE = 850V, RG = 10Ω
Reverse Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
VF IF = 42A, VGE = 0V 2.8 V
trr 1.32 μs
IRM 36 A
IF = 21A, VGE = 0V, -diF/dt = 100A/μs
VR = 100V
ISOPLUS247 (IXBR) Outline
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
© 2008 IXYS CORPORATION, All rights reserved IXYS REF: B_42N170(7N)10-07-08
Fig. 1. Output Characteristics
@ 25ºC
0
10
20
30
40
50
60
70
80
90
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
9V
7V
5V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
30
60
90
120
150
180
210
240
270
300
0 2 4 6 8 101214161820
V
CE
- Volts
I
C
-
Amperes
V
GE
= 15V
13V
11V
7V
9V
Fig. 3. Output Characteristics
@ 125ºC
0
10
20
30
40
50
60
70
80
90
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
9V
7V
5V
Fig. 4. Dependence of V
CE(sat)
on
Junction Tem perature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 84A
I
C
= 42A
I
C
= 21A
Fi g . 5. C o l l ector-to-Emi tter Vol tag e
vs. Gate-to -Emi tter Vo l tag e
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
5 6 7 8 9 101112131415
V
GE
- Volts
V
CE
- Volts
I
C
= 84A
T
J
= 25ºC
21A
42A
Fig. 6. Input Admittance
0
20
40
60
80
100
120
140
160
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
V
GE
- Volts
I
C
-
Amperes
T
J
= - 40ºC
25ºC
125ºC
IXBR42N170
IXYS reserves the right to change limits, test conditions and dimensions.
IXBR42N170
Fig . 12. Maximum Tr a n si en t Th ermal
Impedance
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig . 7 . Tr an sc o n du ct an ce
0
5
10
15
20
25
30
35
40
45
50
55
0 20 40 60 80 100 120 140 160
IC - Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Gate Charge
0
2
4
6
8
10
12
14
16
0 20 40 60 80 100 120 140 160 180 200
QG - NanoCoulombs
VGE - Volts
V
CE
= 850V
I
C
= 42A
I
G
= 10mA
Fig. 11. R eve r se- B i as Saf e Oper ating Area
0
10
20
30
40
50
60
70
80
90
100
110
200 400 600 800 1000 1200 1400 1600 1800
VCE - Volts
IC - Amperes
T
J
= 125ºC
R
G
= 10Ω
dV / dt < 10V / ns
Fig. 10. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
VCE - Volts
Capacitance - PicoFarads
f
= 1 MHz
Cies
Coes
Cres
Fig. 8. Forward Voltage Drop of
Intrinsic Diode
0
10
20
30
40
50
60
70
80
90
100
110
120
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2
VF - Volts
IF - Amperes
T
J
= 125ºC
T
J
= 25ºC
© 2008 IXYS CORPORATION, All rights reserved IXYS REF: B_42N170(7N)10-07-08
Fi g . 14. Resistive Turn -o n
Ri se Time vs. D rain C u r r en t
0
40
80
120
160
200
240
280
320
360
20 25 30 35 40 45 50 55 60 65 70 75 80 85
I
C
- Amperes
t
r
- Nanoseconds
R
G
= 10Ω
V
GE
= 15V
V
CE
= 850V T
J
= 125ºC
T
J
= 25ºC
Fi g . 15. Resistive Turn -o n
Switch i n g Times vs. Gate Resi stan ce
100
200
300
400
500
600
700
800
10 15 20 25 30 35 40 45 50 55
R
G
- Ohms
t
r
- Nanoseconds
20
40
60
80
100
120
140
160
t
d(on)
- Nanoseconds
t
r
td(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 850V
I
C
= 84A
I
C
= 42A
Fi g . 16. Resistive Tu rn -o ff
Switch i n g Times vs. Ju n cti o n Temp erature
300
400
500
600
700
800
900
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
260
280
300
320
340
360
380
t
d(off)
- Nanoseconds
t
f
td(off)
- - - -
R
G
= 10Ω, V
GE
= 15V
V
CE
= 850V
I
C
= 84A
I
C
= 42A
Fi g . 17. R esisti ve Tur n -off
Switch i n g Times vs. D r ai n Cu r r en t
300
400
500
600
700
800
900
1000
1100
1200
1300
20 25 30 35 40 45 50 55 60 65 70 75 80 85
I
C
- Amperes
t
f
- Nanoseconds
240
260
280
300
320
340
360
380
400
420
440
t
d(off)
- Nanoseconds
t
f
td(off)
- - - -
R
G
= 10Ω, V
GE
= 15V
V
CE
= 850V
T
J
= 25ºC, 125ºC
Fi g . 13. R esi sti ve Tur n -on
Ri se Time vs. Juncti on Temper ature
80
120
160
200
240
280
320
360
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 10Ω
V
GE
= 15V
V
CE
= 850V I
C
= 84A
I
C
= 42A
Fi g . 18. R esi sti ve Tur n -off
Switch i n g Times vs. Gate R esi stance
300
400
500
600
700
800
900
1000
1100
1200
10 15 20 25 30 35 40 45 50 55
R
G
- Ohms
t
f
- Nanoseconds
0
200
400
600
800
1000
1200
1400
1600
1800
t
d(off)
- Nanoseconds
t
f
td(off
)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 850V
I
C
= 84A
I
C
= 42A
IXBR42N170
