2SK4192LS Ordering number : ENA1413 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4192LS General-Purpose Switching Device Applications Features * * * * Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol Conditions Ratings VDSS VGSS IDc*1 Unit 400 Limited only by maximum temperature Tch=150C V 30 V 7 A A IDpack*2 Tc=25C (SANYO's ideal heat dissipation condition*3) 6.1 IDP PW10s, duty cycle1% 23 A 2.0 W Allowable Power Dissipation PD 30 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Energy (Single Pulse) *4 EAS IAV 161 mJ Avalanche Current *5 Tc=25C (SANYO's ideal heat dissipation condition*3) 7 A Note : *1 Shows chip capability *2 Package limited *3 SANYO's condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=99V, L=5mH, IAV=7A *5 L5mH, single pulse Marking : K4192 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 20409QB MS IM TC-00001838 No. A1413-1/5 2SK4192LS Electrical Characteristics at Ta=25C Parameter Symbol Conditions Ratings min typ Unit max 400 ID=10mA, VGS=0V VDS=320V, VGS=0V V Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=30V, VDS=0V VDS=10V, ID=1mA Forward Transfer Admittance | yfs | VDS=10V, ID=3.5A Static Drain-to-Source On-State Resistance RDS(on) ID=3.5A, VGS=10V 0.8 Input Capacitance Ciss VDS=30V, f=1MHz 360 pF Output Capacitance Coss VDS=30V, f=1MHz 90 pF Reverse Transfer Capacitance Crss VDS=30V, f=1MHz 19 pF Turn-ON Delay Time td(on) See specified Test Circuit. 13 ns Rise Time tr See specified Test Circuit. 35 ns Turn-OFF Delay Time See specified Test Circuit. 39 ns Fall Time td(off) tf See specified Test Circuit. 17 ns Total Gate Charge Qg VDS=200V, VGS=10V, ID=7A 15 nC 100 A 100 nA 3 1.6 5 3.1 V S 1.04 Gate-to-Source Charge Qgs nC Qgd VDS=200V, VGS=10V, ID=7A VDS=200V, VGS=10V, ID=7A 3.5 Gate-to-Drain "Miller" Charge 8.9 nC Diode Forward Voltage VSD IS=7A, VGS=0V 0.9 1.2 V Package Dimensions unit : mm (typ) 7509-002 4.5 10.0 2.8 0.6 16.1 16.0 7.2 3.5 3.2 1.2 14.0 3.6 0.9 1.2 0.75 0.7 1 : Gate 2 : Drain 3 : Source 2.4 1 2 3 2.55 SANYO : TO-220FI(LS) 2.55 Switching Time Test Circuit Avalanche Resistance Test Circuit VDD=200V PW=10s D.C.0.5% L ID=3.5A RL=57 VGS=10V D 50 RG VOUT 10V 0V G 2SK4192LS 50 VDD 2SK4192LS P.G RGS=50 S No. A1413-2/5 2SK4192LS ID -- VDS 18 16 10V 15V 12 10 8 Tc= --25C 14 Drain Current, ID -- A Drain Current, ID -- A VDS=20V 16 14 8V 6 25C 12 75C 10 8 6 4 4 VGS=5V 2 0 ID -- VGS 18 Tc=25C 0 5 10 15 20 25 0 30 Drain-to-Source Voltage, VDS -- V 0 2 4 6 8 10 12 14 16 18 Gate-to-Source Voltage, VGS -- V IT14402 RDS(on) -- VGS 4.0 2 6V RDS(on) -- Tc 3.0 20 IT14403 3.5 3.0 2.5 2.0 1.5 Tc=75C 1.0 25C --25C 0.5 6 7 8 9 10 11 12 13 14 Gate-to-Source Voltage, VGS -- V 2 = Tc 1.0 C 5 3 2 0 25 50 75 100 125 150 IT14405 IS -- VSD VGS=0V 3 2 1.0 7 5 3 2 0.1 7 5 3 2 2 3 5 7 1.0 2 3 5 7 2 10 Drain Current, ID -- A 0.01 0.2 3 0.6 0.8 1.0 1.2 Ciss, Coss, Crss -- VDS 2 VDD=200V VGS=10V 3 0.4 Diode Forward Voltage, VSD -- V IT14406 SW Time -- ID 5 1.4 IT14407 f=1MHz 1000 7 Ciss, Coss, Crss -- pF 2 100 tf 7 td (off) 5 3 tr 2 td(on) 2 3 5 7 1.0 5 Ciss 3 2 Coss 100 7 5 3 Crss 2 10 7 0.1 --25 10 7 5 C 7 0.1 0.1 0.5 3 2 5C --2 75 = V GS 1.0 Case Temperature, Tc -- C Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 25 3 5A 3. I D= , V 10 0 --50 15 VDS=10V 5 1.5 IT14404 | yfs | -- ID 7 2.0 25C --25C 5 2.5 Tc=7 5C 0 Switching Time, SW Time -- ns Static Drain-to-Source On-State Resistance, RDS(on) -- Static Drain-to-Source On-State Resistance, RDS(on) -- ID=3.5A 2 Drain Current, ID -- A 3 5 7 10 IT14408 10 7 0 10 20 30 40 Drain-to-Source Voltage, VDS -- V 50 IT14409 No. A1413-3/5 2SK4192LS VGS -- Qg 10 8 7 6 5 4 3 2 4 6 8 10 12 14 PD -- Ta 0.5 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C IT14412 EAS -- Ta 120 160 ati on Operation in this area is limited by RDS(on). *1. Shows chip capability *2. SANYO's ideal heat dissipation condition Tc=25C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W 1.0 op er PD -- Tc 35 1.5 0 DC IT14410 2.0 0 IDpack(*2)=6.1A 0.01 0.1 16 1 10 0s 0 1 s 10 ms 10 ms 0m s IDc(*1)=7A 3 2 3 2 0 PW<10s 1.0 7 5 1 2.5 Allowable Power Dissipation, PD -- W 3 2 0.1 7 5 Total Gate Charge, Qg -- nC Avalanche Energy derating factor -- % 10 7 5 2 0 IDP=23A 3 2 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 ASO 5 VDS=200V ID=7A 2 3 5 7 IT14411 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- C 140 160 IT14413 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- C 150 175 IT10478 No. A1413-4/5 2SK4192LS Note on usage : Since the 2SK4192LS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of February, 2009. Specifications and information herein are subject to change without notice. PS No. A1413-5/5