Product data
Supersedes data of 2002 Jan 22
NE/SA/SE532
LM258/358/A/2904
Low power dual operational amplifiers
2002 Jul 12
INTEGRATED CIRCUITS
Philips Semiconductors Product data
NE/SA/SE532/
LM258/358/A/2904
Low power dual operational amplifiers
2
2002 Jul 12 853-1241 28616
DESCRIPTION
The 532/358/LM2904 consists of two independent, high gain,
internally frequency-compensated operational amplifiers internally
frequency-compensated operational amplifiers designed specifically
to operate from a single power supply over a wide range of voltages.
Operation from dual power supplies is also possible, and the low
power supply current drain is independent of the magnitude of the
power supply voltage.
UNIQUE FEATURES
In the linear mode the input common-mode voltage range includes
ground and the output voltage can also swing to includes ground
and the output voltage can also swing to ground, even though
operated from only a single power supply voltage. The unity gain
cross frequency is temperature-compensated. The input bias current
is also temperature-compensated.
FEATURES
•Internally frequency-compensated for unity gain
•Large DC voltage gain: 100 dB
•Wide bandwidth (unity gain): 1 MHz (temperature-compensated)
•Wide power supply range single supply: 3 VDC to 30 VDC,
or dual supplies: ±1.5 VDC to ±15 VDC
•Very low supply current drain (400 µA)—essentially independent
of supply voltage (1 mW/op amp at +5 VDC)
•Low input biasing current: 45 nADC temperature-compensated
•Low input offset voltage: 2 mVDC, and offset current: 5nADC
•Differential input voltage range equal to the power supply voltage
•Large output voltage: 0 VDC to V+ 1.5 VDC swing
PIN CONFIGURATION
1
2
3
45
6
7
8
–+ +–
AB
V+
OUTPUT B
INVERTING INPUT B
NON INVERTING INPUT B
OUTPUT A
INVERTING INPUT A
NON INVERTING INPUT A
V–
D, DP, and N Packages
SL00282
Figure 1. Pin configuration.
EQUIVALENT CIRCUIT
V+
6 µA 100 µA
Q2 Q3
Q1 Q4
INPUTS
+
Q8 Q9
CC
Q10
6 µA
Q5
Q7
Q6
RSC
OUTPUT
Q13
Q12
Q11
50 µA
SL00283
–
Figure 2. Equivalent circuit.
Philips Semiconductors Product data
NE/SA/SE532/
LM258/358/A/2904
Low power dual operational amplifiers
2002 Jul 12 3
ORDERING INFORMATION
DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #
8-Pin Plastic Small Outline (SO) Package 0 °C to +70 °C NE532D SOT96-1
8-Pin Plastic Dual In-Line Package (DIP) 0 °C to +70 °C NE532N SOT97-1
8-Pin Plastic Small Outline (SO) Package –40 °C to +85 °C SA532D SOT96-1
8-Pin Plastic Small Outline (SO) Package –40 °C to +125 °C LM2904D SOT96-1
8-Pin Plastic Thin Shrink Small Outline Package (TSSOP) –40 °C to +125 °C LM2904DP SOT505-1
8-Pin Plastic Dual In-Line Package (DIP) –40 °C to +125 °C LM2904N SOT97-1
8-Pin Plastic Small Outline (SO) Package –25 °C to +125 °C LM258D SOT96-1
8-Pin Plastic Dual In-Line Package (DIP) –25 °C to +125 °C LM258N SOT97-1
8-Pin Plastic Small Outline (SO) Package 0 °C to +70 °C LM358D SOT96-1
8-Pin Plastic Thin Shrink Small Outline Package (TSSOP) 0 °C to +70 °C LM358DP SOT505-1
8-Pin Plastic Dual In-Line Package (DIP) 0 °C to +70 °C LM358N SOT97-1
8-Pin Plastic Small Outline (SO) Package 0 °C to +70 °C LM358AD SOT96-1
8-Pin Plastic Dual In-Line Package (DIP) 0 °C to +70 °C LM358AN SOT97-1
8-Pin Plastic Dual In-Line Package (DIP) –55 °C to +125 °C SE532N SOT97-1
ABSOLUTE MAXIMUM RATINGS
SYMBOL PARAMETER RATING UNIT
VSSupply voltage, V+ 32 or ±16 VDC
Differential input voltage 32 VDC
VIN Input voltage –0.3 to +32 VDC
Maximum power dissipation
Tamb = 25 °C (Still air)1
PDN package 1160 mW
D package 780 mW
DP package 714 mW
Output short-circuit to GND2
V+ < 15 VDC and Tamb = 25 °C Continuous
Operating ambient temperature range
NE532/LM358/LM358A 0 to +70 °C
Tamb
LM258 –25 to +85 °C
T
am
b
LM2904 –40 to +125 °C
SA532 –40 to +85 °C
SE532 –55 to +125 °C
Tstg Storage temperature range –65 to +150 °C
Tsld Lead soldering temperature (10 sec max) 230 °C
NOTE:
1. Derate above 25 °C, at the following rates:
N package at 9.3 mW/°C
D package at 6.2 mW/°C
DP package at 5.72 mW/°C
2. Short-circuits from the output to V+ can cause excessive heating and eventual destruction. The maximum output current is approximately
40 mA independent of the magnitude of V+. At values of supply voltage in excess of +15 VDC, continuous short-circuits can exceed the
power dissipation ratings and cause eventual destruction.
Philips Semiconductors Product data
NE/SA/SE532/
LM258/358/A/2904
Low power dual operational amplifiers
2002 Jul 12 4
DC ELECTRICAL CHARACTERISTICS
Tamb = 25 °C; V+ = +5 V, unless otherwise specified.
SYMBOL PARAMETER TEST CONDITIONS SE532, LM258 NE/SA532/
LM358/LM2904 UNIT
Min Typ Max Min Typ Max
VOS
Offset voltage1
RS = 0 Ω±2±5±2±7 mV
V
OS
Offset
v
oltage1
RS = 0 Ω; over temp. ±7±9 mV
VOS Drift RS = 0 Ω; over temp. 7 7 µV/°C
IOS
Offset current
IIN(+) – IIN(–) ±3±30 ±5±50 nA
I
OS
Offset
c
u
rrent
Over temp. ±100 ±150 nA
IOS Drift Over temp. 10 10 pA/°C
IS
In
p
ut current2
IIN(+) or IIN(–) 45 150 45 250 nA
I
BIAS
Inp
u
t
c
u
rrent2
IIN(+) or IIN(–); Over temp. 40 300 40 500 nA
IBDrift Over temp. 50 50 pA/°C
VC
Common-mode voltage V+ = 30 V 0 V+–1.5 0 V+–1.5 V
V
CM
g
range3V+ = 30 V; Over temp. 0 V+–2.0 0 V+–2.0 V
CMRR Common-mode rejection
ratio V+ = 30 V 70 85 65 70 dB
VO
Out
p
ut voltage swing
RL ≥ 2 kΩ; V+ = 30 V ; over temp. 26 26 V
V
OH
O
u
tp
u
t
v
oltage
s
w
ing
RL ≥ 10 kΩ; V+ = 30 V ; over temp. 27 28 27 28 V
VOL Output voltage swing RL ≥ 10 kΩ; over temp. 5 20 5 20 mV
RL = ∞; V+ = 30 V 0.5 1.0 0.5 1.0 mA
ICC Supply current RL=∞ on all amplifiers; V+ = 30 V ;
over temp. 0.6 1.2 0.6 1.2 mA
RL ≥2 kΩ; VOUT ±10 V 50 100 25 100 V/mV
AVOL Large-signal voltage gain V+=15V (for large VO swing);
over temp. 25 15 V/mV
PSRR Supply voltage rejection
ratio RS = 0 Ω65 100 65 100 dB
Amplifier-to-amplifier
coupling4f = 1 kHz to 20 kHz (input referred) –120 –120 dB
Out
p
ut current (Source)
VIN+ = +1 VDC; VIN– = 0 VDC;
V+ = 15 VDC 20 40 20 40 mA
O
u
tp
u
t
c
u
rrent
(So
u
rce)
VIN+ = +1 VDC; VIN– = 0 VDC;
V+ = 15 VDC; over temp. 10 20 10 20 mA
IOUT VIN– = +1 VDC; VIN+ = 0 VDC;
V+ = 15 VDC 10 20 10 20 mA
Output current (Sink) VIN– = +1 VDC; VIN+ = 0 VDC;
V+ = 15 VDC; over temp. 5 8 5 8 mA
VIN+ = 0 V; VIN– = +1 VDC;
VO = 200 mV 12 50 12 50 µA
ISC Short circuit current540 60 40 60 mA
Differential input voltage6V+ V+ V
GBW Unity gain bandwidth Tamb = 25 °C 1 1 MHz
SR Slew rate Tamb = 25 °C 0.3 0.3 V/µs
VNOISE Input noise voltage Tamb = 25 °C; f = 1 kHz 40 40 nV/√Hz
(Notes on next page).
Philips Semiconductors Product data
NE/SA/SE532/
LM258/358/A/2904
Low power dual operational amplifiers
2002 Jul 12 5
DC ELECTRICAL CHARACTERISTICS (continued)
Tamb = 25 °C; V+ = +5 V; unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
LM358A
UNIT
SYMBOL
PARAMETER
TEST
CONDITIONS
Min Typ Max
UNIT
VOS
Offset voltage1
RS = 0 Ω±2±3 mV
V
OS
Offset
v
oltage1
RS = 0 Ω; over temp. ±5 mV
VOS Drift RS = 0 Ω; over temp. 7 20 µV/°C
IOS
Offset current
IIN(+) – IIN(–) 5±30 nA
I
OS
Offset
c
u
rrent
Over temp. ±75 nA
IOS Drift Over temp. 10 300 pA/ °C
IS
In
p
ut current2
IIN(+) or IIN(–) 45 100 nA
I
BIAS
Inp
u
t
c
u
rrent2
IIN(+) or IIN(–); Over temp. 40 200 nA
IBDrift Over temp. 50 pA/°C
VC
Common mode voltage range3
V+ = 30 V 0 V+–1.5 V
V
CM
Common
-
mode
v
oltage
range3
V+ = 30 V ; Over temp. 0 V+–2.0 V
CMRR Common-mode rejection ratio V+ = 30 V 65 85 dB
VO
Out
p
ut voltage swing
RL ≥ 2 kΩ; V+ = 30 V ; over temp. 26 V
V
OH
O
u
tp
u
t
v
oltage
s
w
ing
RL ≥ 10 kΩ; V+ = 30 V ; over temp. 27 28 V
VOL Output voltage swing RL ≥ 10 kΩ; over temp. 5 20 mV
ICC
Su
pp
ly current
RL = ∞, V+ = 30 V 0.5 1.0 mA
I
CC
S
u
ppl
y
c
u
rrent
RL = ∞ on all amplifiers; V+ = 30 V; over temp. 0.6 1.2 mA
AO
Large signal voltage gain
RL ≥ 2 kΩ; VOUT ±10 V 25 100 V/mV
A
VOL
Large
-
signal
v
oltage
gain
V+ = 15 V (for large VO swing); over temp. 15 V/mV
PSRR Supply voltage rejection ratio RS = 0 Ω65 100 dB
Amplifier-to-amplifier coupling4f=1kHz to 20kHz (input referred) –120 dB
VIN+ = +1 VDC; VIN– = 0 VDC; V+ = 15 VDC 20 40 mA
Output current (Source) VIN+ = +1 VDC; VIN– = 0 VDC; V+ = 15 VDC;
over temp. 10 20 mA
IOUT VIN– = +1 VDC,;VIN+ = 0 VDC; V+ = 15 VDC 10 20 mA
Output current (Sink) VIN– = +1 VDC; VIN+ = 0 VDC;V+ = 15 VDC;
over temp. 5 8 mA
VIN+ = 0 V; VIN– = +1 VDC; VO = 200 mV 12 50 µA
ISC Short circuit current540 60 mA
Differential input voltage6V+ V
GBW Unity gain bandwidth Tamb = 25 °C 1 MHz
SR Slew rate Tamb = 25 °C 0.3 V/µs
VNOISE Input noise voltage Tamb = 25 °C; f = 1 kHz 40 nV/√Hz
NOTES:
1. VO ≈ 1.4 V, RS = 0 Ω with V+ from 5 V to 30 V; and over the full input common-mode range (0 V to V+ –1.5 V).
2. The direction of the input current is out of the IC due to the PNP input stage. This current is essentially constant, independent of the state of
the output so no loading change exists on the input lines.
3. The input common-mode voltage or either input signal voltage should not be allowed to go negative by more than 0.3 V. The upper end of
the common-mode voltage range is V+ –1.5 V, but either or both inputs can go to +32 V without damage.
4. Due to proximity of external components, insure that coupling is not originating via stray capacitance between these external parts. This
typically can be detected as this type of capacitance coupling increases at higher frequencies.
5. Short-circuits from the output to V+ can cause excessive heating and eventual destruction. The maximum output current is approximately
40 mA independent of the magnitude of V+. At values of supply voltage in excess of +15 VDC, continuous short-circuits can exceed the
power dissipation ratings and cause eventual destruction.
6. The input common-mode voltage or either input signal voltage should not be allowed to go negative by more than 0.3 V. The upper end of
the common-mode voltage range is V+ –1.5 V, but either or both inputs can go to +32 VDC without damage.
Philips Semiconductors Product data
NE/SA/SE532/
LM258/358/A/2904
Low power dual operational amplifiers
2002 Jul 12 6
TYPICAL PERFORMANCE CHARACTERISTICS
V – OUTPUT VOLTAGE (V )
O
–
+
VDC
100 kΩ
VO
1K
+7
VDC
VIN
2 kΩ
Tamb = 0 °C to +125 °C
Tamb = 55 °C
4
3
2
1
0010 20 30 40
SUPPLY VOLTAGE (VDC)
SUPPLY CURRENT DRAIN (mA )
DC
90
80
70
60
50
40
30
20
10
055 35 –15 5 25 45 65 85 105 125
TEMPERATURE (°C)
OUTPUT CURRENT (mA )
DC
160
120
80
40
00 10203040
SUPPLY VOLTAGE (VDC)
RL + 20 kΩ
RL + 2 kΩ
A — VOLTAGE GAIN (dB)
VOL
–
+
V+10M
VO
0.1 µf
V+/2
VIN
V+ = 30 VDC AND
–55 °C ≤ Tamb ≤ +125 °C
V+ = 10 to 15 VDC AND
–55 °C < Tamb < +125 °C
140
120
100
80
60
40
20
01 10 100 1k 10k 100k 1M 10M
FREQUENCY (Hz)
VOLTAGE GAIN (dB)
20
15
10
5
01k 10k 100k 1M
FREQUENCY (Hz)
V — OUTPUT SWING (V )
Op–p
RL < 2 kΩ V+ 15 VDC
4
3
2
1
0
3
2
1
0010203040
TIME (µs)
OUTPUT VOLTAGE (V)
INPOUT VOLTAGE (V)
EO
50 pF
INPUT
OUTPUT
θIN
500
450
400
350
300
25001 23456 7 8
t — TIME (µs)
Tamb = +25 °C
V+ = +30 VDC
E – OUTPUT VOLTAGE (mV)
O
+V+ /2
V+
V2
IO
INDEPENDENT OF V+
TAamb= +25 °C
8
7
6
5
4
3
2
1
0.001 0.01 0.1 1 10 100
IO+ – OUTPUT SOURCE CURRENT (mADC)
V – OUTPUT VOLTAGE
REFERENCE TO V+ (VD )
DC
∆
V+ /2
V+
IO
Tamb = +25 °C
V+ = +5 VDC
V+ = +15 VDC
V+ = +30 VDC
10
1
0.1
0.01
0.001 0.01 0.1 1 10 100
IO – OUTPUT SINK CURRENT (mADC)
DC
VO
–
+
+
–
Supply Current Current Limiting Voltage Gain
Open-Loop
Frequency Response Large-Signal
Frequency Response Voltage-Follower
Response
Voltage-Follower
Pulse Response (Small-Signal) Output Characteristics
Current Sourcing Output Characteristics
Current Sinking
SL00284
Figure 3. Typical performance characteristics.
Philips Semiconductors Product data
NE/SA/SE532/
LM258/358/A/2904
Low power dual operational amplifiers
2002 Jul 12 7
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
+V — INPUT VOLTAGE ( V )
15
10
5
NEGATIVE
POSITIVE
0 5 10 15
V+ OR V– — POWER SUPPLY VOLTAGE (+ VDC)
IN DC
+
VCM = 0 VDC
V+ = +30 VDC
V+ = +15 VDC
V+ = +5 VDC
90
80
70
60
50
40
30
20
10
0
–55 –35 –15 5 25 45 65 85 105 125
Tamb — TEMPERATURE (°C)
I – INPUT CURRENT (nA )
BDC
100 Ω
100 Ω
7.5 VDC
VO
100 kΩ
–
+
+
VIN
+7.5 VDC
120
100
80
60
40
20
0
100 1k 10k 100k 1M
f — FREQUENCY (Hz)
CMRR — COMMON–MODE REJECTION RATIO (dB)
Input Voltage Range Input Current Common–Mode Rejection Ratio
SL00285
100 kΩ
Figure 4. Typical performance characteristics (continued).
TYPICAL APPLICATIONS
V+
2
Non-Inverting Amplifier
RF
V+
8
RL
VO
RIN
V+
2
VIN–
+4
V+
8
VO
VIN–
+4
V+
10 kΩ
V+
8
VO
VIN–
+4
V+
RF
BLOCKS
DC.
GAIN R1
Single Supply Inverting Amplifier
Input Biasing Voltage Follower
SL00286
10 kΩ
10 kΩ
10 kΩ
Figure 5. Typical applications.
Philips Semiconductors Product data
NE/SA/SE532/
LM258/358/A/2904
Low power dual operational amplifiers
2002 Jul 12 8
SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1
Philips Semiconductors Product data
NE/SA/SE532/
LM258/358/A/2904
Low power dual operational amplifiers
2002 Jul 12 9
DIP8: plastic dual in-line package; 8 leads (300 mil) SOT97-1
Philips Semiconductors Product data
NE/SA/SE532/
LM258/358/A/2904
Low power dual operational amplifiers
2002 Jul 12 10
TSSOP8: plastic thin shrink small outline package; 8 leads; body width 3 mm SOT505-1
Philips Semiconductors Product data
NE/SA/SE532/
LM258/358/A/2904
Low power dual operational amplifiers
2002 Jul 12 11
NOTES
Philips Semiconductors Product data
NE/SA/SE532/
LM258/358/A/2904
Low power dual operational amplifiers
2002 Jul 12 12
Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended
periods may af fect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
Disclaimers
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can
reasonably be expected to result in personal injury . Philips Semiconductors customers using or selling these products for use in such applications
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Contact information
For additional information please visit
http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to:
sales.addresses@www.semiconductors.philips.com.
Koninklijke Philips Electronics N.V. 2002
All rights reserved. Printed in U.S.A.
Date of release: 08-02
Document order number: 9397 750 10187
Data sheet status[1]
Objective data
Preliminary data
Product data
Product
status[2]
Development
Qualification
Production
Definitions
This data sheet contains data from the objective specification for product development.
Philips Semiconductors reserves the right to change the specification in any manner without notice.
This data sheet contains data from the preliminary specification. Supplementary data will be
published at a later date. Philips Semiconductors reserves the right to change the specification
without notice, in order to improve the design and supply the best possible product.
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply.
Changes will be communicated according to the Customer Product/Process Change Notification
(CPCN) procedure SNW-SQ-650A.
Data sheet status
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL
http://www.semiconductors.philips.com.
