SBL1030CT-SBL1060CT Vishay Lite-On Power Semiconductor 10A Schottky Barrier Rectifier Features D Schottky barrier chip D Guard ring die constuction for transient protection D Low power loss, high efficiency D High current capability and low forward voltage drop D High surge capability D For use in low voltage, high frequency inverters, 95 9630 free wheeling, and polarity protection application D Plastic material - UL Recognition flammability classification 94V-0 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Repetitive peak reverse voltage g =Working peak reverse voltage DC Bl ki voltage lt =DC Blocking Peak forward surge current Average forward current Junction and storage temperature range Type Symbol Value Unit SBL1030CT SBL1035CT SBL1040CT SBL1045CT SBL1050CT SBL1060CT VRRM =VRWM VR =V 30 35 40 45 50 60 175 10 -65...+150 V V V V V V A A C IFSM IFAV Tj=Tstg TC=95C Electrical Characteristics Tj = 25_C Parameter Forward voltage g Reverse current Diode capacitance Thermal resistance junction to case Rev. A2, 24-Jun-98 Test Conditions IF=5A, TC=25C TC=25C TC=125C VR=4V, f=1MHz TL=const. Type SBL1030CT-SBL1045CT SBL1050CT-SBL1060CT Symbol Min Typ Max VF VF IR IR CD RthJC 0.55 0.70 0.5 50 450 5.5 Unit V V mA mA pF K/W 1 (4) SBL1030CT-SBL1060CT Vishay Lite-On Power Semiconductor 4000 20 C D - Diode Capacitance ( pF ) IFAV - Average Forward Current ( A ) Characteristics (Tj = 25_C unless otherwise specified) 16 12 8 4 0 50 100 0.1 150 Tamb - Ambient Temperature ( C ) 15327 10 100 Figure 4. Typ. Diode Capacitance vs. Reverse Voltage 100 10 SBL1030CT - SBL1045CT 10 SBL1050CT - SBL1060CT 1.0 Tj = 25C IF Pulse Width = 300 s 2% Duty Cycle 0.1 0.2 0.6 0.8 15340 Figure 2. Typ. Forward Current vs. Forward Voltage 300 Tj = 125C 1.0 Tj = 75C 0.1 Tj = 25C 0.01 0.001 0.4 VF - Forward Voltage ( V ) 15337 I R - Reverse Current ( mA ) IF - Forward Current ( A ) 1.0 VR - Reverse Voltage ( V ) 15339 Figure 1. Max. Average Forward Current vs. Ambient Temperature IFSM - Peak Forward Surge Current ( A ) 1000 100 0 15338 Tj = 25C 0 40 80 120 Percent of Rated Peak Reverse Voltage (%) Figure 5. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage 8.3 ms Single Half-Sine-Wave JEDEC method 250 200 150 100 50 0 1 10 100 Number of Cycles at 60 Hz Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles 2 (4) Rev. A2, 24-Jun-98 SBL1030CT-SBL1060CT Vishay Lite-On Power Semiconductor Dimensions in mm 14468 Case: molded plastic Polarity: as marked on body Approx. weight: 2.24 grams Mounting position: any Marking: type number Rev. A2, 24-Jun-98 3 (4) SBL1030CT-SBL1060CT Vishay Lite-On Power Semiconductor Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 4 (4) Rev. A2, 24-Jun-98