●I
N-CHANNEL JUNCTION
FIELD-EFFECT TRANSISTORS
. . . depletion mode (Type A) Junction Field-Effect Transistors
designed for chopper and high-speed switching applications.
@Low Drain-Source “ON” Resistance —
rds(o”) =30 Ohms (2 N5638)
60 Ohms (2 N5639)
100 Ohms (2 N5640)
@Low “Reverse Transfer Capacitance —
Crss= 4.0 pF (Max) @f= 1.0 MHz .,<(
MAXIMUM RATINGS
2N5638
2N5639
2N5640
0Rating Symbol I ,,
““ $alue
,,.;i Unit
s.-.,~.
‘+,.
Drain-Source Voltaae Vnc y~?. ‘“ 30 Vdc
*Reverse Gate-Source Voltage v&~:<J I
*Forward Gate Current &\:~:g&:, ““
*Total Device Dissipation @TA =25°C ,, ‘$<*,:*D
Derate above 25°C .,4
‘.:,
~,;,<,:y-$~,,t’~ 2.82 mW/°C
...
*Storage Temperature Range ,$,<., ,< Tstg -65 to+150 Oc
,,4<..).:,,..,:,~
1,$,.-., -65 to+135 Oc
~,>,.l\;$.....,!:(.? 1
$/<. ...
~,s/
IOPeratin~J~nction Tem~erature R~ge%’”’ IT.I
OUTPUT *10% LJI
U.Ulb
0.019
OIAHOLE(TYP)
‘4 u
I
+
,,. ,... ... ,... .,
*ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage V(BR)GSS 30 Vdc
(IG =10pAdc, VDS=O)
—
Gate Reverse Current ,3!.
IGSS “$$ic,
(VGS =-15 Vdc, VDS =0} ..~*~:;*:..\,*.i\l..:+J,V
1.0 J$a~”%>*
(VGS =-15 Vdc, VDS =O, TA =100°C)
—
—1.0 ~,~if::p ‘
Drain Cutoff Current lD(off) $i\Jtf<‘~~,,
(VDS =15 Vdc, VGS =-12 Vdc) ,,. .*:.:.$$>w.
2N5638 —,k.:; ;+~ ~Adc
(VDS =15Vdc, VGS =-8.0 Vdc) 2N5639 —.k{”~ ,,:’
(VDS =15 Vdc, VGS =-6.0 Vdc) 2N5640 .{:$ti~v’ “
(VDS =15 Vdc, VGS =-12 Vdc, TA =100°C)
—
2N5638 ?,:,~~
(VDS =15 Vdc, VGS =-8.0 Vdc, TA =100°C)
—.:;,, pAdc
2N5639 ... s:.1.0
—..-Y/:*...>.
DN CHARACTERISTICS
Zero-Gate Voltage Drain Current (Note 1)[DSS ‘
{VDS =20 Vdc, VGS =O) 2N5638 .Jpi’,;:
2N5639 ...~,.: e
\),r+.
~..s~~trk
2N5640 ,.0..,”,+,;*,,
$.,,...+,!l,>,
,,?!\:, ..,.,,
Drain-Source “ON” Voltaga 4$
v+($~~,+w
(ID =12 mAdc, VGS =O) 2N5638 ,’y:‘.,*[:.i~
(1D=6.0 mAdc, VGS =O) ‘*l*ti,
2N5639 ,tT. ,.
(1D=3.O mAdc, VGS =O) 2N5640 a~+..
Static Drain-Source “ON” Resistance
(ID= l.OmAdc, VGS=O)
25
5.0
—
—
—
—
—
—
—
—
—
0.5
0.5
0.5
30
60
100
mAdc
Vdc
Ohms
,,, 1’
,el)
lD(on) =12 mAdc 2N5638 td(gn) —4.0 .ns
6.0 mAdc 2N5639 —6.0
3.0 mAdc 2N5640 —8.0 .-’
lD(on) =12 mAdc 2N5638 tr —5.0 ns
6.0 mAdc 2N5639 —8.0
3.0 mAdc 2N5640 —10
lD(On) =12 mAdc 2N5638 td(off) —5.0 ns
6.0 mAdc 2N5639 —10
3.0 mAdc 2N5640 —15
iD(on) =12 mAdc 2N5638 tf —10 ns
6.0 mAdc 2N5639 —20
3.0 mAdc 2N5640 —30,
*Indicates JEDEC Registered Data.
Note 1. Pulse Test: Pulse Width< 300 Ms, Duty Cvcle <3.0%.
—
@
MOTOROLA Semiconductor Products Inc.—
❑OX 209!2 ●PHOENIX, ARIZONA 8s036 .ASUBSIDIARY OF MOTOROLA INC.
4517PRINTEDINUSA6.69 IMPERIALLITHOu]17M 15M DS531?
