2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V(BR)DSS RDS(ON) max ID max TA = 25C 60V 7.5 @ VGS = 5V 0.23A * * * * * * * * * * Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2 and 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. * * * * * * Motor control Power Management Functions * * Case: SOT363 Case Material: Molded Plastic. "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.006 grams (approximate) SOT363 D2 G1 S1 S2 G2 D1 Top View Internal Schematic Top View Ordering Information (Note 4) Part Number 2N7002DW-7-F 2N7002DW-13-F Notes: Case SOT363 SOT363 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. Halogen and Antimony free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 3. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information YM K72 K72 YM Date Code Key Year 1998 Code J Month Code Jan 1 1999 K 2000 L Feb 2 2N7002DW Document number: DS30120 Rev. 14 - 2 2001 M Mar 3 2002 N Apr 4 2003 P May 5 K72 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) 2004 R ... ... Jun 6 1 of 4 www.diodes.com 2011 Y Jul 7 2012 Z Aug 8 2013 A Sep 9 2014 B Oct O 2015 C 2016 D Nov N 2017 E Dec D April 2012 (c) Diodes Incorporated 2N7002DW Maximum Ratings @TA = 25C unless otherwise specified Characteristic Drain-Source Voltage Drain-Gate Voltage RGS 1.0M Continuous Pulsed Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 5V Steady State Symbol VDSS VDGR VGSS VGSS Value 60 60 20 40 Units V V V V ID 0.23 0.18 0.14 A IS IDM 0.53 0.8 A A TA = 25C TA = 70C TA = 100C Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10s pulse, duty cycle = 1%) Thermal Characteristics @TA = 25C unless otherwise specified Characteristic Symbol TA = 25C TA = 70C TA = 100C Steady state Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) TA = 25C TA = 70C TA = 100C Steady state Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Steady state Value 0.31 0.2 0.12 410 0.4 0.25 0.15 318 135 -55 to +150 PD RJA PD RJA RJC TJ, TSTG Units W C/W W C/W C/W C Electrical Characteristics @TA = 25C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 8) Turn-On Delay Time Turn-Off Delay Time Notes: @ TC = 25C @ TC = 125C @ TJ = 25C @ TJ = 125C Symbol Min Typ Max Unit Test Condition BVDSS 60 70 V VGS = 0V, ID = 10A IDSS A VDS = 60V, VGS = 0V IGSS 1.0 500 10 nA VGS = 20V, VDS = 0V VGS(th) 1.0 3.2 4.4 2.0 V 7.5 13.5 VDS = VGS, ID = 250A VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA RDS (ON) ID(ON) gFS VSD 0.5 80 1.0 0.78 1.5 A mS V Ciss Coss Crss 22 11 2.0 50 25 5.0 pF pF pF VDS = 25V, VGS = 0V f = 1.0MHz tD(on) 7.0 20 ns VDD = 30V, ID = 0.2A, RL = 150, VGEN = 10V, RGEN = 25 tD(off) 11.0 20 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2N7002DW Document number: DS30120 Rev. 14 - 2 2 of 4 www.diodes.com April 2012 (c) Diodes Incorporated 2N7002DW 7 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN-SOURCE CURRENT (A) 1.0 0.8 0.6 0.4 0.2 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics 4 3 2 1 0.2 0.4 0.6 0.8 ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs. Drain Current 1.0 6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 5 0 0 5 2.0 1.5 1.0 0.5 0 -55 6 -30 -5 20 45 70 95 120 145 Tj, JUNCTION TEMPERATURE (C) Fig. 3 On-Resistance vs. Junction Temperature 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage Package Outline Dimensions A SOT363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ F 0.40 0.45 H 1.80 2.20 J 0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.22 0 8 All Dimensions in mm B C H K J M D 2N7002DW Document number: DS30120 Rev. 14 - 2 F L 3 of 4 www.diodes.com April 2012 (c) Diodes Incorporated 2N7002DW Suggested Pad Layout C2 Z C2 Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 C1 G Y X IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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