1
Item Symbol Ratings Unit Remarks
Drain-source voltage V DS 150
VDSX 120
Continuous drain current ID±33
±4.1 *4
Pulsed drain current ID(puls] ±132
Gate-source voltage VGS ±30
Repetitive or non-repetitive IAR *2 33
Maximum Avalanche Energy EAS *1 169
Maximum Drain-Source dV/dt dVDS/dt 20
Peak Diode Recovery dV/dt dV/dt *3 5
Max. power dissipation PD2.4 *4
150
Operating and storage Tch +150
temperature range Tstg
Electrical characteristics atTc =25°C ( unless otherwise specified)
Thermalcharacteristics
2SK3474-01 FUJI POWER MOSFET200303
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
for Switching
Absolute Maximum Ratings at Tc=25°C
( unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS VDS=150V VGS=0V
VDS=120V VGS=0V
VGS=±30V
ID=11.5A VGS=10V
ID=11.5A VDS=25V
VCC=48V ID=11.5A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
nA
mΩ
S
pF
nC
A
V
µs
µC
ns
Min. Typ. Max. Units
Thermal resistance Rth(ch-c) channel to case
Rth(ch-a) channel to ambient
Rth(ch-a) *4 channel to ambient
0.833
87.0
52.0
°C/W
°C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=250µA VGS=0V
ID= 250µA VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=75V
VGS=0V
f=1MHz
VCC=48V
ID=23A
VGS=10V
L=228 µH Tch=25°C
IF=23A VGS=0V Tch=25°C
IF=23A VGS=0V
-di/dt=100A/µs Tch=25°C
V
V
A
A
A
V
A
mJ
kV/µs
kV/µs
W
W
°C
°C
150
3.0 5.0
25
250
10 100
54 70
816
1500 1730
200 300
17 26
13 20
15 23
34 51
15 23
34 51
9 13.5
12.5 19
33 1.10 1.60
0.13
0.6
-55 to +150
Outline Drawings [mm]
Equivalent circuit schematic
Super F AP-G Series
Foot Print Pattern
(1) Gate(G)
(3) Source(S)
[power line]
(4) Drain(D)
(2) Source(S)
[signal line]
VGS=30V
Ta=25°C
VDS 150V
Ta=25°C
=
<
*4 Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area:500mm2)
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
=
<=
<=
<
*1 L=0.228mH, Vcc=48V, See to Avalanche Energy Graph *2 Tch 150°C
=
<
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2
0.1 1 10 100
0.1
1
10
100
gfs [S]
ID [A]
Typical Transconductance
012345678910
0.1
1
10
100
ID[A]
VGS[V]
Typical Transfer Characteristic
0123456
0
10
20
30
40
50 20V
7.0V
10V 8V
6.5V
7.5V
6.0V
ID [A]
VDS [ V]
T yp ical Output Char a cte ri stic s
VGS=5.5V
Characteristics
2SK3474-01 FUJI POWER MOSFET
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
ID=f(VDS):80µs Pulse test,Tch=25°C
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
0 5 10 15 20 25 30 35 40 45 50
0.00
0.05
0.10
0.15
0.20
0.25
0.30
7.0V
6.5V
RDS(on) [ Ω ]
ID [A]
Typi cal Drain-Source on-state Re sistanc e
10V
20V
8V
7.5V
6.0V
VGS=
5.5V
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
0255075100125150
0
1
2
3
4
5Surface mounted on
1000m m2,t=1. 6m m FR -4 PC B
(Dr ain pad area : 500m m2)
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [°C] 0 25 50 75 100 125 150
0
25
50
75
100
125
150
175
200
Allowable Power Diss i pat ion
PD=f(Tc)
PD [W]
Tc [°C]
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3
-50 -25 0 25 50 75 100 125 150
0
20
40
60
80
100
120
140
160
180
200
RDS(on) [ m Ω ]
Tch [°C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=11.5A,VGS=10V
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
0.1
1
10
100
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
0 5 10 15 20 25 30 35 40 45 50
0
2
4
6
8
10
12
14
Qg [C]
Typical Gate Charge Characteristics
VGS [V]
72V48V
Vcc= 36V
2SK3474-01 FUJI POWER MOSFET
VGS=f(Qg):ID=23A, Tch=25°C
IF=f(VSD):80µs Pulse test,Tch=25°C
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
typ.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
VGS(th) [V]
Tch [°C]
10-1 100101102
10p
100p
1n
10n
C [F]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
10-1 100101102
100
101
102
103
Typical Switching Characteristics vs. ID
td(on)
tr
tf
td(off)
t [ns]
ID [A]
t=f(ID):Vcc=48V, VGS=10V, RG=10Ω
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4
2SK3474-01 FUJI POWER MOSFET
0 1000 2000 3000 4000 5000
0
10
20
30
40
50
60
70
80
90
100
Rth(ch-a) [ oC/W]
Drain Pad Area [mm2]
Thermal Resistance vs. Drain Pad area
t=1.6mm FR-4 PCB
0 25 50 75 100 125 150
0
100
200
300
400
500
IAS=14A
IAS=33A
IAS=20A
EAS [mJ]
starting Tch [°C]
Ma ximum Avalanche Energy vs. starting Tch
EAS=f(starting Tch):Vcc=48V
10-8 10-7 10-6 10-5 10-4 10-3 10-2
10-2
10-1
100
101
102
Single Pulse
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25°C,Vcc=48V
Avalanche Current I
AV [A]
tAV [sec]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
Zth(ch-c) [°C/W]
t [sec]
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