PIbYlke GOO51c4 OD _ 7964142 SAMSUNG. SEMICONDUCTOR INC. Do a ee ee 88D 05124 - - N-CHANNEL . ___D T= 8# 13 IRF350/351/352/353 POWER MOSFETS _FEATURES Low Rpsvon) improved Inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Low input capacitance , Extended safe operating area Improved high temperature reliability TO-3 package (Standard) TO-3 PRODUCT SUMMARY Part Number Vos Ros(on) IRF250 400V 0.30 15A IRF251 350V 0.32 15A IRF252 400V 0.42 13A IRF253 350V 0.48 13A MAXIMUM RATINGS Characteristic IRF350 IRF351 IRF382 IRF353 Unit Drain-Source Voltage (1) 400 350 400 350 Vde Drain-Gate Voltage (Ras=1.0M) (1) 400 350 400 350 Vde u Gate-Source Voltage Vde Continuous Drain Current To=25C 15 15 13 13 Adc Continuous Drain Current Tc=100C 9.0 9.0 8.0 8.0 Adc Drain CurrentPulsed (3) 60 60 52 52 Adc Gate CurrentPulsed 1.6 Adc Total Power Dissipation @ Tc=25C Derate above 25C 150 1.2 Watts wiec Operating and Storage Junction Temperature Range Ty, Tstg ~55 to 150 c Maximum Lead Temp. for Soldering TL 300 C Purposes, 1/B from case for 5 seconds Notes: (1) Ty=25C to 150C (2) Pulse test: Pulse width<300us, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature ce SAMSUNG SEMICONDUCTOR 123! BE 2964142 2 SAMSUNG SEMICONDUCTOR INC -98D_05125 __D T3413 wee fea Fa DER 7I64L42 ooos2,a5 y N-CHANNEL . ELECTRICAL CHARACTERISTICS (1.=25C unless otherwise specified) Characteristic Symbol| Type |Min| Typ | Max |Units Test Conditions . IRF350 IRF352 400} - V |lVes=0V Drain- Source Breakdown BVoss " [Nottage IRF351/ 350 V |ip=250nA - A- . IRF353 pe eon Gate Threshold Voltage Vestn | ALL |2.0] | 4.0 | V |Vps=Vas, lno=250pA Gate-Source Leakage Forward] Igss ALL || 100 | nA iVes=20V f Gate-Source Leakage Reverse] lass ALL | | |-100] nA /Ves=20V Zero Gate Voltage loss ALL | = | 250] HA |Vos=Max. Rating, Ves=OV Drain Current } | 1000} pA |Vps=Max. RatingX0.8, Ves=OV, To= 125C}, . , IRF350] | On-State Drain-Source inFa5i| 1] | A IDton) ; Vos>lp(on)XApsion} max.. Vas=10V Current (2) (RF352 inFasa| 2; | | A : "TIRE: 2 - nese, |0.25| 0.3 | a Static Drain-Source On-State Roston) Ves=10V. Ip=8.0A Resistance (2) IRF352 9 . . IRF353| ~ | 2 | %4 Forward Transconductance (2)! gis ALL |8.0] 11 _ 3 |Vos>Ipjon)<Roston) max.. Ip=8.0A Input Capacitance Ciss ALL | |2630/ 3000] pF Output Capacitance Coss | ALL | | 390] 600 | pF iVes=O0V, Vos=25V, f=1.0MHz Reverse Transfer Capacitance! Cyss ALL | | 130} 200 pF Turn-On Delay Time tajon) | ALL | | 35 | ns Rise Time tr ALL | | | 65 | ns Vpo=0.5BVoss, 'o=8.0A, 20=4.7 a - ~ (MOSFET switching times are essentially Turn-Off Delay Time tao | ALL | | | 150 | NS |independent of operating temperature.) t Fall Time tr ALL | ] 75 | ns Total Gate Charge 20 . (Gate-Source Plus Gate-Drain) Q, ALL 73) 1 NG I Ves=10V, lo=18A, Vos=0.8 Max. Rating {Gate charge is essentially Independent of Gate-Source Charge Qgs ALL | | 14 - no operating temperature.) Gate-Drain (Miller) Charge Qoa ALL |j{ 69/ nc , THERMAL RESISTANCE dunction-to-Gase Rinc | ALL | |] | 0.83 |) K/W Case-to-Sink Rincs | ALL | j 0.1 | K/W |Mounting surface flat, smooth, and greased Junction-to-Ambient \ Riwa | ALL | }] 30 | K/W (Free Air Operation Notes: (1) Tj=25C to 150C (2) Pulse test: Pulse width<300us, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature ee samsuna SEMICONDUCTOR 4287984142 IRF350/351/352/353 "SAMSUNG, SEMICONDUCTOR INC PALYLY2 OOOSLeb J fee vel ant _ DT =34-I 3 ' N-CHANNEL POWER MOSFETS 98D 05126 _ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic Symbol! Type : Min} Typ | Max |Units Test Conditions : inFa50] _| _ | as | a, Continuous Source Current Is IRF351 . Body Diod: - : } (Body Diode) heses| | | 13 | A. [Modified MOSFET symbol | L 4showing the integral i & ii IRF350) oP reverse P-N junction rectifier: : 60 A s Pulse Source Current tom IRF35 1 ~ | a (Body Diode) (3) IRF352| | 52 A IRF353 yf Ld InEses| | | 16 | V. |Te=28C, Is=15A, Vos=0V Diode Forward Voltage (2) Vso IRF352 -IRF353/ ~ _ 1.5 Vo ITc=26C, Is=13A, Vas=0V | Reverse Recovery Time tre ALL {| {1000' ns |Ty=150C, {r= 15A, dip/dt= =100A/uS Notes: (1) Ty=25C to 150C (2) Pulse test: Pulse width<300ps, Duty Cycle<2% (3) Repetitive ratina: Pulse width limited by max. junction temperature 24 a az a 1 = < E a wood c 7 oO z < a a 2 4 50 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Typical Output Characteristics g c w a = < & z w x =< > 3 z < a a s Vps, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Typical Saturation Characteristics Ip, DRAIN CURRENT (AMPERES) lo, DRAIN CURRENT (AMPERES) fa Vas, GATE-TO-SOURCE VOLTAGE (VOLTS) Typical Transfer Characteristics Ty= 150C MAX. 5 10 20 50 100 200 500 Vos, DRAIN-TO-SOUACE VOLTAGE (VOLTS) Maximum Safe Operating Area gu ca6 SAMSUNG SEMICONDUCTOR 125_ One oe ead ee 142 SAMSUNG. SEMICOND DUCTOR INC. _-9aD 05127 __ Vila Mtn Ny wo o >, 1s fs. N esuyiue 0005127 5 pe Leelee ee N-CHANNEL. IRF350/351/352/353 POWER MOSFETS _ 0.5 9 to 2 a = 1 Duty Factor Det 2 Q Tas-ToPom Zeuc tt) <inscitvltindc; NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE (PER UNIT) 5 10 2 2 5 107 2 t1. SQUARE WAVE PULSE DURATION (SECONDS) Maximum Effective Transient Thermal Impedance Junction-to-Case Vs. Pulse Duration 10 2 5 1 2 2.0 am (NORMALIZED) S BVnss, ORAIN-TO-SOURCE BREAKDOWN VOLTAGE Rosion, DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) Par Unit pase=hg=0 83 0eg CW @ g & a : = = M4 5 z < > 5 o z : 2 5 & w 3 @ < ut aw # * a a . 4 B 20 1 2 3 4 6 6 y |- lo, ORAIN CURRENT (AMPERES) . Vsp, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Typical Transconductance Vs. Drain Current Typical SourceDrain Diode Forward Voltage 2.5 0.75 Oo 40 oO 40 60 120 160 1 160 Ty JUNCTION TEMPERATURE (C) Ty, JUNCTION TEMPERATURE (C) Breakdown Voltage Vs. Temperature Normalized On-Resistance Vs. Temperature GEE sawsunc SEMICONDUCTOR 126 Eee a Pi ey ee ATEPAbYLYe OOOSLe4S 2 IRF350/351/352/353 2964142 SAMSUNG. SEMICONDUCTOR. ING. ee Mk Se ee = 190. 08128... 1-39 13. N-CHANNEL ~~ POWER MOSFETS C. CAPACITANCE (pF) 40 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Typical Capacitance Ys. Drain to Source Voltage 2 DURATION. INITIAL T)=25G OF 2 is Rasion), DRAIN-TO-SOURCE ON RESISTANCE (OHMS) 15 - a0 45 60 'p, DRAIN CURRENT (AMPERES) Typical On-Resistance Vs. Orain Current Pp, POWER DISSIPATION (WATTS) 9 20 Ta, AMBIENT TEMPERATURE (C) Power Vs. Temperature Derating Curve - so - 75 20 Vas, GATE-TO-SOURCE VOLTAGE (VOLTS) 0 Qg, TOTAL GATE CHARGE (nC) Typical Gate Charge Vs. Gate-To-Source Voltage tp, DRAIN CURRENT (AMPERES) Ta, AMBIENT TEMPERATURE (C) Maximum Drain Current Vs. Case Temperature 5 SAMSUNG SEMICONDUCTOR 127