N AMER PHILIPS/DISCRETE b9E D MM 6653931 0027070 b?b MAPX Philips Semiconductors Product specification eee eee eee a eee rece Voltage regulator diodes BZGO3 series Di DESCRIPTION QUICK REFERENCE DATA High reliability glass-passivated SYMBOL PARAMETER NOM. MAX. UNIT diodes in a small rectangular SMD Vv Ki SOD106A envelope. The envelope Z Working voltage range 10to270_ |- V dimensions meet JEDEC DO-214AC | Ptot total power dissipation ~ 3 Ww envelope specification. They are Pzsm non-repetitive peak reverse | 600 Ww intended for use as medium power power dissipation voltage regulator diodes, especially in automotive applications. The series consists of BZG03-C10 to BZG03-C270 in the normalized cathode 24 range. fl Ul Top view MAMO91 Fig.1 Simplified outline (SQD106A) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Prot total power dissipation Ttp = 100 C - 3 Ww Tamb = 50 C; - 1.25 Ww PCB mounted; see Fig 2 Pzsm non-repetitive peak reverse power tp = 100 ps, square pulse; - 600 W dissipation T; = 25 C prior to surge T stg storage temperature -65 +175 C T; junction temperature -65 +175 C October 1993 2N AMER PHILIPS/DISCRETE Philips Semiconductors B9E D MM 66535931 0027071 S02 MBAPX Product specification Voltage regulator diodes BZGO03 series THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE Rth j-tp thermal resistance from junction to tie-point 25 K/W Pith j-amb thermal resistance from junction to ambient _|note ) 100 K/W note () 150 KW Note 1. Device mounted on a 0.7 mm thick AlzOz printed-circuit board; thickness of copper 2 35 ym; see Fig 2. 2. Device mounted on a 1.5 mm thick epoxy glass printed-circuit board; thickness of copper 2 40 um ; see Fig 2 CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Ve forward voltage Ip =0.5A | - 1.2 V < 50 +h J 1 _4 50 i. O25 elles2s MSB213 Dimensions in mm. Fig.2 Printed-circuit board for surface mounting. October 1993N AMER PHILIPS/DISCRETE 69E D Ml 6653931 OO27072 449 MMAPX Philips Semiconductors Product specification @ Voltage regulator diodes BZGO3 series DIFFERENTIAL | TEMPERATURE} TEST | REVERSE CURRENT at B7G03 | OETAGE | RESISTANCE | COEFFICIENT | CURRENT | REVERSE VOLTAGE - t+} XXXX Vz (V) at lz Fait (Q) at lz Sy (%/K) at lz be (mA) Ip (WA) Ve) MIN. | NOM. | MAX. | TYP. | MAX. | MIN. | MAX. MAX. C10 9.4 10 10.6 2 4 0.05 | 0.09 50 10 7.5 Ct 10.4 11 11.6 4 7 0.05 | 0.10 50 4 8.2 C12 11.4 12 12.7 4 7 0.05 | 0.10 50 3 9.1 C13 12.4 13 14.1 5 10 0.05 | 0.10 50 2 10 C15 13.8 15 15.6 5 10 0.05 | 0.10 50 1 11 C16 15.3 16 17.1 6 15 0.06 | 0.11 25 1 12 Ci8 16.8 18 19.1 6 15 0.06 | 0.11 25 1 13 C20 18.8 20 21.2 6 15 0.06 | 0.11 25 1 15 C22 20.8 22 23.3 6 15 0.06 | 0.11 25 1 16 C24 22.8 24 25.6 7 15 0.06 | 0.11 25 1 18 C27 25.1 27 28.9 7 15 0.06 | 0.11 25 1 20 C30 28 30 32 8 15 0.06 | 0.11 25 1 22 C33 31 33 35 8 15 0.06 | 0.11 25 1 24 C36 34 36 38 21 40 0.06 | 0.11 10 1 27 039 37 39 41 21 40 0.06 | 0.11 10 1 30 C43 40 43 46 24 45 0.07 | 0.12 10 1 33 C47 44 47 50 24 45 0.07 | 0.12 10 1 36 C51 48 51 54 25 60 0.07 | 0.12 10 1 39 C56 52 56 60 25 60 0.07 | 0.12 10 1 43 C62 58 62 66 25 80 0.08 | 0.13 10 1 47 C68 64 68 72 25 80 0.08 | 0.13 10 1 5 C75 70 75 79 30 100 | 0.08 | 0.13 10 1 56 C82 77 82 87 30 100 | 0.08 | 0.13 10 1 62 C91 85 91 96 60 200 | 0.09 | 0.13 5 1 68 C100 94 100 106 60 200 | 0.09 | 0.13 5 1 75 C110 104 110 116 80 250 | 0.09 | 0.13 5 1 82 C120 114 120 127 80 250 | 0.09 | 0.13 5 1 91 C130 124 | 130 144 110 | 300 | 0.09 | 0.13 5 1 100 C150 138 150 156 | 130 | 300 | 0.09 | 0.13 5 1 110 C160 153 160 171 150 | 350 | 0.09 | 0.13 5 1 120 C180 168 180 191 180 | 400 | 0.09 | 0.13 5 1 130 C200 188 | 200 | 212 | 200 | 500 | 009 | 0.13 5 1 150 C220 208 | 220 | 233 | 350 | 750 | 0.09 | 0.13 2 1 160 C240 228 240 256 400 850 0.09 0.13 2 1 180 C270 251 270 | 289 | 450 | 1000 | 0.09 | 0.13 2 1 200 October 1993 4N AMER PHILIPS/DISCRETE Philips Semiconductors BIE D MM 6653931 0027073 345 MMAPX Product specification Voltage regulator diodes BZGO03 series MGA894 0 1 Ve () 2 T; = 25C. Fig.3 Forward current as a function of forward voltage; typical values. Prot (W) 200 T (C) Device mounted as shown in Fig.2. Fig.4 Maximum total power dissipation as a function of temperature. MGA&S5 104 PZsm (W) 102 10 1072 101 1 10 tp (ms) T| = 25 C prior to surge. Fig.5 Maximum non-repetitive peak reverse power dissipation (Square pulse). October 1993N AMER PHILIPS/DISCRETE bSE D M@M@ 6653931 0027074 211 MMAPX Philips Semiconductors Product specification Voltage regulator diodes BZGO3 series PACKAGE OUTLINE cathode band ~] 3 & * on u l 0.2 Dimensions in mm. Fig.8 SOD106A. October 1993 6N AMER PHILIPS/DISCRETE BSE D WM 6653931 0027075 158 MAPX Philips Semiconductors Product specification Voltage regulator diodes BZGO03 series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1993 7