2001-07-05
Page 1
SPP11N60C3, SPB11N60C3
SPI11N60C3
Preliminary data
Cool MOS™=
==
=Power Transistor
C
Power Semiconducto rs
OO LMOS
Feature
•=New revolutionary high voltage technology
• Worldwide best RDS
(
on
)
in TO 220
• Ultra low gate charge
•=Periodic avalanche rated
• Extreme dv/dt rated
•=High peak current capability
•=Improved transconductance
•=150 °C operating temperature
Product Summary
VDS @ T
j
max 650 V
RDS
(
on
)
0.38 Ω
ID11 A
P-TO262-3-1 P-TO220-3-1P-TO263-3-2
Type Package Ordering Code
SPP11N60C3 P-TO220-3-1 Q67040-S4395
SPB11N60C3 P-TO263-3-2 Q67040-S4396
SPI11N60C3 P-TO262-3-1 Q67042-S4403
Marking
11N60C3
11N60C3
11N60C3
Maximum Ratings, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
11
7
A
Pulsed drain current, t
p
limited by T
j
max ID
p
uls 33
Avalanche energy, single pulse
ID=5.5A, VDD=50V
EAS 340 mJ
Avalanche energy, repetitive tAR limited by Tjmax1)
ID=11A, VDD=50V
EAR 0.6
Avalanche current, repetitive t
A
R limited by T
j
max I
A
R11 A
Reverse diode dv/dt
IS=11A, VDS <=VDD, di/dt=100A/µs, Tjmax=150°C
dv/dt6V/ns
Gate source voltage static VGS ±20 V
Gate source voltage dynamic VGS ±30
Power dissipation, TC = 25°C Pto
t
125 W
Operating and storage temperature T
j
, Tst
g
-55... +150 °C
2001-07-05
Page 2
SPP11N60C3, SPB11N60C3
SPI11N60C3
Preliminary data
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC - - 1 K/W
Thermal resistance, junction - ambient, leaded RthJ
- - 62
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 2)
RthJA
-
-
-
35
62
-
Linear derating factor - - 1 W/K
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s Tsold - - 260 °C
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=0.25mA
V(BR)DSS 600 - - V
Drain-source avalanche breakdown voltage
VGS=0V, ID=11A
V(BR)DS - 700 -
Gate threshold voltage, VGS = VDS
ID = 0.5 mA
VGS(th) 2.1 3 3.9
Zero gate voltage drain current
VDS = 600 V, VGS = 0 V, Tj = 25 °C
VDS = 600 V, VGS = 0 V, Tj = 150 °C
IDSS
-
-
-
-
25
250
µA
Gate-source leakage current
VGS=20V, VDS=0V
IGSS - - 100 nA
Drain-source on-state resistance
VGS=10V, ID=7A, Tj=25°C
VGS=10V, ID=7A, Tj=150°C
RDS(on)
-
-
0.34
1.1
0.38
1.22
Ω
Gate input resistance
f = 1 MHz, open drain RG- 0.86 -
1Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2001-07-05
Page 3
SPP11N60C3, SPB11N60C3
SPI11N60C3
Preliminary data
Electrical Characteristics , at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Characteristics
Transconductance gfs VDS≥2*ID*RDS(on)max ,
ID=7A
- 8.3 - S
Input capacitance Ciss VGS=0V, VDS=25V,
f=1MHz
- 1460 - pF
Output capacitance Coss - 610 -
Reverse transfer capacitance Crss - 21 -
Effective output capacitance,1)
energy related Co(er) VGS=0V,
VDS=0V to 480V
- 45 - pF
Effective output capacitance,2)
time related Co(tr) - 85 -
Turn-on delay time td
(
on
)
VDD=380V, VGS=0/10V,
ID=11A, RG=6.8Ω
- 10 - ns
Rise time tr- 5 -
Turn-off delay time td
(
off
)
- 44 70
Fall time t
f
- 5 9
Gate Charge Characteristics
Gate to source charge Q
g
sVDD=480V, ID=11A - 5.5 - nC
Gate to drain charge Q
g
d- 22 -
Gate charge total QgVDD=480V, ID=11A,
VGS=0 to 10V
- 45 60
Gate plateau voltage V
(
plateau
)
VDD=480V, ID=11A - 5.5 - V
1Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
2Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
2001-07-05
Page 4
SPP11N60C3, SPB11N60C3
SPI11N60C3
Preliminary data
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Characteristics
Inverse diode continuous
forward current ISTC=25°C - - 11 A
Inverse diode direct current,
pulsed ISM - - 33
Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V
Reverse recovery time trr VR=480V, IF=IS ,
diF/dt=100A/µs
- 400 600 ns
Reverse recovery charge Qrr - 6 - µC
Peak reverse recovery current Irrm - 41 - A
Peak rate of fall of reverse
recovery current dirr/dt - 1200 - A/µs
Transient Thermal Characteristics
Symbol Value Unit Symbol Value Unit
typ. typ.
Thermal resistance
Rth1 0.015 K/W
Rth2 0.034
Rth3 0.056
Rth4 0.124
Rth5 0.143
Rth6 0.057
Thermal capacitance
Cth1 0.0002121 Ws/K
Cth2 0.0007091
Cth3 0.001184
Cth4 0.00254
Cth5 0.011
Cth6 0.092
External Heatsink
Tj Tcase
Tamb
Cth1 Cth2
Rth1 Rth,n
Cth,n
Ptot (t)
2001-07-05
Page 5
SPP11N60C3, SPB11N60C3
SPI11N60C3
Preliminary data
1 Power dissipation
Ptot = f (TC)
0 20 40 60 80 100 120 °C 160
TC
0
10
20
30
40
50
60
70
80
90
100
110
120
W
140 SPP11N60C3
Ptot
2 Drain current
ID = f (TC)
parameter: VGS≥ 10 V
0 20 40 60 80 100 120 °C 160
TC
0
1
2
3
4
5
6
7
8
9
10
A
12 SPP11N60C3
ID
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC=25°C
10 0 10 1 10 2 10 3
VVDS
-1
10
0
10
1
10
2
10
A
SPP11N60C3
ID
R
DS(on)
= V
DS
/ I
D
DC
10 ms
1 ms
100 µs
tp = 13.0µs
4 Transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W SPP11N60C3
ZthJC
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
2001-07-05
Page 6
SPP11N60C3, SPB11N60C3
SPI11N60C3
Preliminary data
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
0 3 6 9 12 15 18 21 V27
VGS
0
4
8
12
16
20
24
28
32
A
40
ID
4,5V
5V
5,5V
6V
6,5V
7V
20V
10V
8V
6 Typ. output characteristic
ID = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
0 5 10 15 V 25
VDS
0
2
4
6
8
10
12
14
16
18
A
22
ID
4V
4.5V
5V
5.5V
6V
20V
8V
7V
7.5V
8 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 7 A, VGS = 10 V
-60 -20 20 60 100 °C 180
Tj
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
Ω
2.1 SPP11N60C3
RDS(on)
typ
98%
7 Typ. drain-source on resistance
RDS(on)=f(ID)
parameter: Tj=150°C, VGS
0 2 4 6 8 10 12 14 16 A 20
ID
0.4
0.6
0.8
1
1.2
1.4
1.6
Ω
2
RDS(on)
4V 4.5V 5V 5.5V 6V
6.5V
8V
20V
2001-07-05
Page 7
SPP11N60C3, SPB11N60C3
SPI11N60C3
Preliminary data
9 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
0 2 4 6 8 10 12 V 15
VGS
0
4
8
12
16
20
24
28
32
A
40
ID
25°C
150°C
10 Gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS, ID = 0.5 mA
-60 -20 20 60 100 °C 160
Tj
0
0.5
1
1.5
2
2.5
3
3.5
4
V
5
VGS(th)
max.
typ.
min.
11 Typ. gate charge
VGS = f (QGate)
parameter: ID = 11 A pulsed
0 10 20 30 40 50 nC 70
QGate
0
2
4
6
8
10
12
V
16 SPP11N60C3
VGS
0,8 VDS max
DS max
V
0,2
12 Forward characteristics of body diode
IF = f (VSD)
parameter: T
j
, tp = 10 µs
0 0.4 0.8 1.2 1.6 2 2.4 V3
VSD
-1
10
0
10
1
10
2
10
A
SPP11N60C3
IF
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 150 °C typ
Tj = 150 °C (98%)
2001-07-05
Page 8
SPP11N60C3, SPB11N60C3
SPI11N60C3
Preliminary data
6.8 Typ. switching time
t = f (ID), inductive load, Tj=125°C
par.: VDS=380V, VGS=0/+13V, RG=6.8Ω
02468 A 12
ID
0
5
10
15
20
25
30
35
40
45
50
55
60
ns
70
t
tr
td(off)
td(on)
tf
13 Typ. switching time
t = f (RG), inductive load, Tj=125°C
par.: VDS=380V, VGS=0/+13V, ID=11 A
0 10 20 30 40 50 Ω70
RG
0
50
100
150
200
250
ns
350
t
td(off)
td(on)
tr
tf
14 Typ. drain current slope
di/dt = f(RG), inductive load, Tj = 125°C
par.: VDS=380V, VGS=0/+13V, ID=11A
0 20 40 60 80 Ω120
RG
0
500
1000
1500
2000
A/µs
3000
di/dt
di/dt(on)
di/dt(off)
15 Typ. drain source voltage slope
di/dt = f(RG), inductive load, Tj = 125°C
par.: VDS=380V, VGS=0/+13V, ID=11A
0 10 20 30 40 50 Ω70
RG
0
10000
20000
30000
40000
50000
60000
70000
80000
90000
100000
110000
V/ns
130000
dv/dt
dv/dt(on)
dv/dt(off)
2001-07-05
Page 9
SPP11N60C3, SPB11N60C3
SPI11N60C3
Preliminary data
17 Typ. switching losses
E = f(RG), inductive load, Tj=125°C
par.: VDS=380V, VGS=0/+13V, ID=11A
0 10 20 30 40 50 Ω70
RG
0
0.04
0.08
0.12
0.16
mWs
0.24
E
Eon*
Eoff
*) Eon includes SDP06S60
diode commutation losses.
16 Typ. switching losses
E = f (ID), inductive load, Tj=125°C
par.: VDS=380V, VGS=0/+13V, RG=6.8Ω
02468 A 12
ID
0
0.005
0.01
0.015
0.02
0.025
0.03
mWs
0.04
E
Eon*
Eoff
*) Eon includes SDP06S60
diode commutation losses.
18 Avalanche SOA
IAR = f (tAR)
par.: Tj ≤ 150 °C
10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4
µs
tAR
0
1
2
3
4
5
6
7
8
9
A
11
IAR
Tj(START)=125°C
Tj(START)=25°C
19 Avalanche energy
EAS = f (Tj)
par.: ID = 5.5 A, VDD = 50 V
20 40 60 80 100 120 °C 160
Tj
0
50
100
150
200
250
mJ
350
EAS
2001-07-05
Page 10
SPP11N60C3, SPB11N60C3
SPI11N60C3
Preliminary data
20 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
-60 -20 20 60 100 °C 180
Tj
540
560
580
600
620
640
660
680
V
720 SPP11N60C3
V(BR)DSS
21 Avalanche power losses
PAR = f (f )
parameter: EAR=0.6mJ
10 4 10 5 10 6
MHz
f
0
50
100
150
200
W
300
PAR
22 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz
0 100 200 300 400 V 600
VDS
0
10
1
10
2
10
3
10
4
10
pF
C
Ciss
Coss
Crss
23 Typ. Coss stored energy
Eoss=f(VDS)
0 100 200 300 400 V 600
VDS
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
µJ
7.5
Eoss
2001-07-05
Page 11
SPP11N60C3, SPB11N60C3
SPI11N60C3
Preliminary data
Definition of diodes switching characteristics
2001-07-05
Page 12
SPP11N60C3, SPB11N60C3
SPI11N60C3
Preliminary data
P-TO220-3-1
symbol [mm] [inch]
minmaxminmax
A 9.70 10.30 0.3819 0.4055
B 14.88 15.95 0.5858 0.6280
C 0.65 0.86 0.0256 0.0339
D 3.55 3.89 0.1398 0.1531
E 2.60 3.00 0.1024 0.1181
F 6.00 6.80 0.2362 0.2677
G 13.00 14.00 0.5118 0.5512
H 4.35 4.75 0.1713 0.1870
K 0.38 0.65 0.0150 0.0256
L 0.95 1.32 0.0374 0.0520
M
N 4.30 4.50 0.1693 0.1772
P 1.17 1.40 0.0461 0.0551
T 2.30 2.72 0.0906 0.1071
2.54 t y p. 0.1 t y p.
dimensions
P-TO220-3-1
TO - 263 (D²Pak/P - T O2 2 0 S M D)
symbol [mm] [inch]
min max min max
A 9.80 10.20 0.3858 0.4016
B 0.70 1.30 0.0276 0.0512
C 1.00 1.60 0.0394 0.0630
D 1.03 1.07 0.0406 0.0421
E
F 0.65 0.85 0.0256 0.0335
G
H 4.30 4.50 0.1693 0.1772
K 1.17 1.37 0.0461 0.0539
L 9.05 9.45 0.3563 0.3720
M 2.30 2.50 0.0906 0.0984
N
P 0.00 0.20 0.0000 0.0079
Q 4.20 5.20 0.1654 0.2047
R
S 2.40 3.00 0.0945 0.1181
T 0.40 0.60 0.0157 0.0236
U
V
W
X
Y
Z0.3701
0.6358
0.1811
2.54 typ.
5.08 typ.
4.60
9.40
16.15
15 typ.
6.23
1.15
10.80
8° max
dimensions
0.4252
0.0453
0.2453
0.1 typ.
0.2 typ.
0.5906 typ.
8° max
2001-07-05
Page 13
SPP11N60C3, SPB11N60C3
SPI11N60C3
Preliminary data
P-TO262-3-1
2001-07-05
Page 14
SPP11N60C3, SPB11N60C3
SPI11N60C3
Preliminary data
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.