TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
ISOLATED DIODE ARRAY
Qualified per MIL-PRF-19500/474
T4-LDS-0083 Rev. 1 (082463) Page 1 of 4
DEVICES LEVELS
1N6101 JAN
JANTX
JANTXV
DESCRIPTION
These low capacitance diode arrays are multiple, discrete, isolated junctions
fabricated by a planar process and mounted in a 16-PIN package for use as
steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by
directing them either to the positive side of the power supply line or to ground
(see figure 1). An external TVS diode may be added between the positive supply
line and ground to prevent overvoltage on the supply rail. They may also be used
in fast switching core-driver applications. This includes computers and peripheral
equipment such as magnetic cores, thin-film memories, plated-wire memories,
etc., as well as decoding or encoding applications. These arrays offer many
advantages of integrated circuits such as high-density packaging and improved
reliability. This is a result of fewer pick and place operations, smaller footprint,
smaller weight, and elimination of various discrete packages that may not be as
user friendly in PC board mounting.
IMPORTANT: For the most current data, consult MICROSEMI’s website:
http://www.microsemi.com
FEATURES
¾ Hermetic Ceramic Package
¾ Isolated Diodes to Eliminate Cross-Talk Voltages
¾ High Breakdown Voltage VBR > 75 V at 5 μA
¾ Low Leakage IR < 100nA at 40 V
¾ Low Capacitance C < 4.0 pF
¾ Switching Speeds less than 10 ns
¾ Options for screening in accordance with MIL-PRF-19500/474 for JAN,
JANTX, JANTXV, the prefixes respectively to part numbers.
16-PIN Ceramic
DIP
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
ISOLATED DIODE ARRAY
Qualified per MIL-PRF-19500/474
T4-LDS-0083 Rev. 1 (082463) Page 2 of 4
APPLICATIONS / BENEFITS
¾ High Frequency Data Lines
¾ RS-232 & RS-422 Interface Networks
¾ Ethernet: 10 Base T
¾ Computer I/O Ports
¾ LAN
¾ Switching Core Drivers
¾ IEC 61000-4 Compatible (see circuit in figure 1)
61000-4-2 ESD : Air 15kV, contact 8kW
61000-4-4 (EFT) : 40A – 5/50 ns
61000-4-5 (surge): 12A 8/20 μs
MAXIMUM RATINGS
¾ Reverse Breakdown Voltage 75 V (Notes 1 & 2)
¾ Continuous Forward Current 300 mA dc (Notes 1 & 3)
¾ Peak Surge Current (tp=1/120 s) of 500 mA dc (Note 1)
¾ 400 mW Power Dissipation per Junction @ 25oC
¾ 600 mW Power Dissipation per Package @ 25oC (Note 4)
¾ Operating Junction Temperature range –65° to +150oC
¾ Storage Temperature range of –65° to +200oC
NOTE 1: Each Diode
NOTE 2: Pulsed: PW = 100 ms max; duty cycle ≤ 20%
NOTE 3: Derate at 2.4 mA/°C above +25°C
NOTE 4: Derate at 4.8 mW/°C above +25°C
MECHANICAL AND PACKAGING
¾ 16-PIN Ceramic DIP
¾ Weight 2.09 grams (approximate)
¾ Marking: Logo, part number, date code
¾ Pin #1 to the left of the indent on top of package
¾ Carrier Tubes; 25 pcs (standard)
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
ISOLATED DIODE ARRAY
Qualified per MIL-PRF-19500/474
T4-LDS-0083 Rev. 1 (082463) Page 3 of 4
ELECTRICAL CHARACTERISTI CS (Per Diode) @ 25oC unless otherwise specified
MAXIMUM
FORWARD
VOLTAGE
VF1
IF = 100 mA
(Note 1)
MAXIMUM
REVERSE
CURRENT
IR1
VR = 40 V
MAXIMUM
REVERSE
CURRENT
IR2
VR = 20 V
MAXIMUM
CAPACITANCE
(PIN TO PIN)
Ct
VR = 0 V
F = 1 MHz
MAXIMUM
FORWARD
RECOVERY
TIME
tfr
IF = 100 mA
MAXIMUM
REVERSE
RECOVERY
TIME
trr
IF = IR = 10 mAdc
irr = 1 mAdc
RL = 100 ohms
MAXIMUMF
ORWARD
VOLTAGE
MATCH
VF5
IF = 10 mA
PART
NUMBER V µA nA pF ns ns mV
1N6101 1 0.1 25 4.0 15 10 5
NOTE 1: Pulsed: PW = 300 µs +/- 50 µs, duty cycle ≤ 2%, 90 µs after leading edge.
SYMBOLS & DEFINITIONS
Symbol DEFINITION
VBR Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VF Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified
current.
IR Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
Ct Capacitance: The capacitance of the diode as defined @ 0 volts at a frequency of 1 MHz and stated in
picofarads.
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
ISOLATED DIODE ARRAY
Qualified per MIL-PRF-19500/474
T4-LDS-0083 Rev. 1 (082463) Page 4 of 4
SCHEMATIC CIRCUIT
Supply rail (+VCC)
GND (or -VCC)
STEERING DIODE APPLICATION
FIGURE 1
PACKAGE DIMENSIONS
I/O Port
.320
.290
.785
MAX
.060
.015
.310
.220 .005
MIN
.070
.030
.100
BSC
.200
MAX
.023
.014
.200
.100
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