A\LAMBDA COMPLEMENTARY POWER DARLINGTONS 2N6283, 2N6284, 2N6286, 2N6287 160 WATT (20 AMP CONTINUOUS, 40 AMP PEAK) FEATURES e Electrical specifications guaranteed at 25C e Guaranteed minimum DC current gain at full rated current e Hermetically sealed DESCRIPTION The 2N6283, 2N6284 devices are three- terminal NPN Darlington Power Transis- tors. The 2N6286, 2N6287 devices are PNP Darlington Power Transistors. These devices are monolithic epitaxial base structures with built-in base to emitter shunt resistors. The devices are CVD glass passivated to increase reliability and provide reduced high-temperature reverse leakage current. internal diode protection (D1) of the Darlington config- uration is built into the structure to limit the device power dissipation during nega- tive overshoot. *MAXIMUM RATINGS PARAMETER SYMBOL | MAXIMUM | UNITS Collector Emitter Voltage Vee Vde 2N6283, 2N6286 80 2N6284, 2N6287 100 Collector Base Voltage Veso Vde 2N6283, 2N6286 80 2N6284, 2N6287 100 Emitter Base Voltage Veso 5 Vde Collector Current lc Adc Continuous 20 Peak 40 Base Current | Ip 0.5 Adc Thermal Resistance | Bic 1.09 C Natt Total internal Power Dissipation @ Ty = 2501 | 160 Watts Operating Junction and Ty 65 to +200 Storage Temperature Tst *indicates JEDEC Registered Data. ) For operation above T, == 25C, derate @ 0.915 W/C. DEVICE SELECTION GUIDE DEVICE bec POLARITY 2N6283 B0V NPN 2N6284 100V NPN 2N6286 B0V PNP 2N6287 100V PNP These Darlington devices are hermetically sealed copper/steel TO-3 packages providing high reliability and low thermal resistance. 2792N6283, 2N6284, 2N6286, 2N6287 *ELECTRICAL CHARACTERISTICS All parameters are guaranteed at Tp = 25C, unless otherwise specified. Forward Transfer Ratio Parameter Symbol Test Conditions Minimum Maximum Units ON CHARACTERISTICS Collector Emitter Veeisaty Ip = 10 Adc; lz = 40 mAdc 2.0 Vde Saturation Voltage Io = 20 Adc; Ig = 100 mAdc 3.0 Base Emitter Veeton) lo = 10 Ade; Vog = 3 Vdc 2.8 Vde Turn-on Voltage Base Emitter Vee(sat) lo = 20 Ade; Iz = 200 mAdc 4.0 Vde Saturation Voltage DC Current Gain Nee Io = 10 Adc; Veg = 3 Vde 750 18,0002 Ig = 20 Adc; Voe = 3 Vde 100 18,0002 OFF CHARACTERISTICS Collector Emitter Veeo(sus) log = 100 mAdc; Iz = OA Vde Sustaining Voltaget 2N6283, 2N6286 80 2N6284, 2N6287 100 Emitter Cutoff eso Veg = 5 Vde; Ip = OA 2.0 mAdc Current Collector Cutoff logo mAde Current 2N6283, 2N6286 Voce = 40 Vde; Ip = OA 1.0 2N6284, 2N6287 Vee = 50 Vde; Ip = OA 1.0 Collector Cutoff Ioex Voce = Rated; Vaccory = 1.5 Vde 0.5 mAdc Current Voe = Rated; Veco = 1.5 Vde; 5.0 Te = 150C DYNAMIC CHARACTERISTICS Output Capacitance Cob Vog = 10 Vdc; Ie = 0 Ade 400 pF f = 0.1 MHz Small Signal Ne Ig = 10 Adc; Vog = 3 Vde 300 Current Gain f = 1 kHz Common Emitter Ne Ip = 10 Ade; Veg = 3 Vde 4 Short Circuit f = 1 MHz Indicates JEDEC Registered Data. (1) Pulse tested with pulse width = 300 8 and duty cycle = 2.0%. 2802N6283, 2N6284, 2N6286, 2N6287 POWER DISSIPATION (WATTS) Vz (VOLTS) 170 150 130 110 90 70 50 3.5 3.0 2.5 2.0 1.5 1.0 0.5 OPERATIONAL DATA POWER DERATING \ \ N 25 50 75 100 125 150 175 200 CASE TEMPERATURE (C) MEASURED BETWEEN THE TERMINALS FORWARD VOLTAGE OF D1 (2N6283, 2N6284) 2 4 6810 2 lp (AMPS) 4 6 810 lc (AMPS) Ve (VOLTS) 1 3.5 3.0 2.5 2.0 1.5 1.0 0.5 SAFE OPERATING AREA dc (1 sec) To = 25 C 2N6283, 2N6286 2N6283, 2 N6287 2 4 6810 20 4060 100 200 Voce (VOLTS) FORWARD VOLTAGE OF D1 (2N6286, 2N6287) Yo jt rn 4 2 4 6810 2 4 6 810 |; (AMPS) 2812N6283, 2N6284, 2N6286, 2N6287 OPERATIONAL DATA ON VOLTAGE VS COLLECTOR CURRENT (2N6283, 2N6284) 3.0 Ty = 25C Io/lg = 250 2.0 VOLTS Vee (SAT) 1.5 Vv + Vee = 3V 1.0 BE (ON) cE Vce (sat) 5 2 4 6.81 2 4 6 810 lc (AMPS) DC COLLECTOR CURRENT GAIN VS COLLECTOR CURRENT (2N6283, 2N6284) 20,000 Vor = 3V 10,000 6,000 4,000 2,000 1,000 600 400 200 100 A 2 4 6.81 2 4 6810 20 I, (AMPS) 282 = 1,000 ON VOLTAGE VS COLLECTOR CURRENT (2N6286, 2N6287) 3.0 Ty = 25C Ic/lp = 250 2.5 2.0 Vee (SAT) VOLTS 1.5 Vee con: Vee = 3V 1.0 Vee (sat) 5 2 4 #681 2 4 6810 20 tc (AMPS) DC COLLECTOR CURRENT GAIN VS COLLECTOR CURRENT (2N6286, 2N6287) 20,000 Vee = 3V 10,000 6,000 4,000 Ty = 200C 2,000 600 400 200 100 1 2 4.6.81 2 4 6810 20 lc (AMPS)2N6283, 2N6284, 2N6286, 2N6287 OPERATIONAL DATA COLLECTOR SATURATION REGION COLLECTOR SATURATION REGION (2N6283, 2N6284) (2N6286, 2N6287) 21 T, = 25C 291s = 25C 20A 1.9 1.8 15A 17 @ 2 16 I 245 ? 3 14 1.3 1.2 5A 5A 1 ; 1.0 5 1 2 46810 20 40 60100 5 1 2 4 6810 20 40 60 100 Ip (mA) lg (mA) BLOCK DIAGRAMS NPN PNP COLLECTOR 9 COLLECTOR BASE Qi Ri ~ S7.5K D1 a2 R2 = 25 _.J EMITTER O EMITTER 2832N6283, 2N6284, 2N6286, 2N6287 DEVICE OUTLINE JL O ) 0.992 max 0.157 MAX BOTH ENDS \ 0.492 R MAX h- 1.54 MAX. + 0.875 26 ae Pla [= PR | 2c eke in als ____ a ao SS mo QC as ~ICo Noe 0.0374 4 0.0425 DIA 2 LEADS 1.18 1.20 sos oa 2 HOLES [ , 1 Base 2 Emitter Case Is Collector NOTE: Case temperature measured at point X. 284 All dimensions are in inches.