CE BZX55-C0V8 THRU BZX55-C200
CHENYI ELECTRONICS 0.5W SILICON PLANAR ZENER DIODES
FEATURES
. The zener voltage are graded according to the international E24
standard .Other voltage tolerance and higher zener voltage
on request.
MECHANICAL DATA
. Case: DO-35 glass case
. Polarity: Color band denotes cathode end
. Weight: Approx. 0.13gram
ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES)(TA=25 )
Symbols Units
Zener current see table "Characteristics"
Power dissipation at TA=50 Ptot mW
Junction temperature TJ
Storage temperature range TSTG
1)Valid provided that at a distance of 8mm from case are kept at ambient temperature
ELECTRICAL CHARACTERISTICS(TA=25 )
Symbols Min. Typ. Max. Units
Thermal resistance junction to ambient R JA 3001) K/W
Forward voltage at IF=100mA VF1V
1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature
5001)
175
-65 to + 175
Value
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CE BZX55-C0V8 THRU BZX55-C200
CHENYI ELECTRONICS 0.5W SILICON PLANAR ZENER DIODES
BXZ55... SILICON PLANAR ZENER DIODES
Temp coefficient
of zener voltage
VZNOM TKVZ
VmA VmA A A V%/K
BZX 55/C 0V8 3) 0.8 0.73…0.83 <8 <50 - - - -0.26...-0.23
BZX 55/C 2V0 2.0 1.9…2.1 <100 <200
BZX 55/C 2V4 2.4 2.28…2.56 <50 <100
BZX 55/C 2V7 2.7 2.5…2.9 <10 <50
BZX 55/C 3V0 32.8…3.2 <4
BZX 55/C 3V3 3.3 3.1…3.5
BZX 55/C 3V6 3.6 3.4…3.8
BZX 55/C 3V9 3.9 3.7…4.1
BZX 55/C 4V3 4.3 4.0…4.6 <75 <1 <20 -0.06…-0.03
BZX 55/C 4V7 4.7 4.4…5.0 <60 <0.5 <10 -0.05…+0.02
BZX 55/C 5V1 5.1 4.8…5.4 <35 <550 -0.02…+0.02
BZX 55/C 5V6 5.6 5.2…6.0 <25 <450 -0.05…+0.05
BZX 55/C 6V2 6.2 5.8…6.6 <10 <200 2.0 0.03…0.06
BZX 55/C 6V8 6.8 6.4…7.2 <8 <150 3.0 0.03…0.07
BZX 55/C 7V5 7.5 7.0…7.9 <7 5.0 0.03…0.07
BZX 55/C 8V2 8.2 7.7…8.7 <7 6.2 0.03…0.08
BZX 55/C 9V1 9.1 8.5…9.6 <10 6.8 0.03…0.09
BZX 55/C 10 10 9.4…10.6 <15 <70 7.5 0.03…0.1
BZX 55/C 11 11 10.4…11.6 <20 <70 8.2
BZX 55/C 12 12 11.4…12.7 <20 <90 9.1
BZX 55/C 13 13 12.4…14.1 <26 <110 10.0
BZX 55/C 15 15 13.8…15.6 <30 <110 11.0
BZX 55/C 16 16 15.3…17.1 <40 <170 12
BZX 55/C 18 18 16.8…19.1 <50 <170 13
BZX 55/C 20 20 18.8…21.2 <55 <220 15
5 1
<0.1 <2
<1
-0.09…-0.06
-0.08…-0.05
0.03…0.11
<2 <40
Type
Zener Voltage Range1)
IZT for VZT 2)
Dynamic resistance Reverse leakage current
IR and IR 2) at VR
<85
<600
<50
rzjt and rzjk at Izk
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CE BZX55-C0V8 THRU BZX55-C200
CHENYI ELECTRONICS 0.5W SILICON PLANAR ZENER DIODES
BXZ55... SILICON PLANAR ZENER DIODES
BZX 55/C 22 22 20.8…23.3 <55 16
BZX 55/C 24 24 22.8…25.6 <80 18
BZX 55/C 27 27 25.1…28.9 20
BZX 55/C 30 30 28…32 22
BZX 55/C 33 33 31…35 24
BZX 55/C 36 36 34…38 27
BZX 55/C 39 39
37…41 <500 30
BZX 55/C 43 43
40…46 <500 33
BZX 55/C 47 47 44…50 <600 36
BZX 55/C 51 51 48….54 <700 39
BZX 55/C 56 56 52…60 <700 43
BZX 55/C 62 62 58…66 47
BZX 55/C 68 68 64…72 51
BZX 55/C 75 75 70…79 56
BZX 55/C 82 82 77…87 <1500 0.25 62
BZX 55/C 91 91 85…96 <2000 68
BZX 55/C 100 100 94…106 <5000 75
BZX 55/C 110 110 104…116 <5000 82
BZX 55/C 120 120 114…127 <5500 91
BZX 55/C 130 130 124…141 <6000 100
BZX 55/C 150 150 138…156 <6500 110
BZX 55/C 160 160 153…171 <7000 120
BZX 55/C 180 180 168…191 <8500 130
BZX 55/C 200 200 188…212 <10000 150
1)Tested with pulses tp=20ms
2)Valid provided that leads are kept at ambient temperature at a distance of 8mm from case
3)The BZX55-C0V8 is silicon diode with operation in forward direction. Hence, the index of all parameters should be 'F' instead of 'Z'. Connect the cathode
lead to the negative pole.
0.05…0.12
0.1
<5 0.04…0.12
2.5
1
<80
5
<1000
0.5
<220 1
<10
<0.1
<2
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 3 of 4
CE BZX55-C0V8 THRU BZX55-C200
CHENYI ELECTRONICS 0.5W SILICON PLANAR ZENER DIODES
BXZ55... SILICON PLANAR ZENER DIODES
BREAKDOWN CHARACTERISTICS AT TJ=CONSTANT(PULSED)
BREAKDOWN CHARACTERISTICS AT TJ=CONSTANT(PULSED)
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 4 of 4
