2N918
Silicon NPN Transisto
r
Data Sheet
Description
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N918J)
• JANTX level (2N918JX)
• JANTXV level (2N918JV)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
• Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
• Ultra-high frequency transistor
• Low power
• NPN silicon transistor
Features
• Hermetically sealed TO-72 metal can
• Also available in chip configuration
• Chip geometry 0003
• Reference document:
MIL-PRF-19500/301
Benefits
• Qualification Levels: JAN, JANTX, and
JANTXV
• Radiation testing available
Absolute Maximum Ratings TC = 25°C unless otherwise specified
Parameter Symbol Rating Unit
Collector-Emitter Voltage VCEO 15
Volts
Collector-Base Voltage VCBO 30
Volts
Emitter-Base Voltage VEBO 3
Volts
Collector Current, Continuous IC 50
mA
Power Dissipation, TA = 25°C
Derate linearly above 25°C PT 200
1.14
mW
mW/°C
Operating Junction Temperature
Storage Temperature
TJ
TSTG -65 to +200 °C
Copyright 2002 Semicoa Semiconductors, Inc.
Rev. F 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2
www.SEMICOA.com
Copyright 2002 Semicoa Semiconductors, Inc.
Rev. F 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com
2N918
Silicon NPN Transisto
r
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Collector-Emitter Breakdown Voltage V(BR)CEO I
C = 3 mA 15 Volts
Collector-Base Cutoff Current
ICBO1
ICBO2
ICBO3
VCB = 25 Volts
VCB = 30 Volts
VCB = 25 Volts, TA = 150°C
10
1
1
nA
µA
µA
Emitter-Base Cutoff Current IEBO1
IEBO2
VEB = 2.5 Volts
VEB = 3 Volts
10
10
nA
µA
On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Parameter Symbol Test Conditions Min Typ Max Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
IC = 0.5 mA, VCE = 10 Volts
IC = 3 mA, VCE = 1 Volts
IC = 10 mA, VCE = 10 Volts
IC = 3 mA, VCE = 1 Volts
TA = -55°C
10
20
20
10
200
Base-Emitter Saturation Voltage VBEsat I
C = 10 mA, IB = 1 mA 1.0 Volts
Collector-Emitter Saturation Voltage VCEsat I
C = 10 mA, IB = 1 mA 0.4 Volts
Dynamic Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio |hFE| VCE = 10 Volts, IC = 4 mA,
f = 100 MHz 6 18
Open Circuit Output Capacitance COBO VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz 1.7
pF
Noise Figure NF VCE = 6 Volts, IC = 1 mA,
f = 60 MHz, Rg = 2.5 MΩ
6 dB
Power Gain Gpe VCB = 12 Volts, IC = 6 mA,
f = 200 MHz 15
dB
Collector Base time constant rb’CC VCB = 10 Volts, IE = -4 mA,
f = 79.8 MHz 25
ps
Collector efficiency η VCB = 15 Volts, IC = 8 mA,
f = 500 MHz 30
mW
Oscillator Power Output PO VCB = 15 Volts, IC = 8 mA,
f = 500 MHz 25
%