2N918 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: * Ultra-high frequency transistor * Low power * NPN silicon transistor * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N918J) * JANTX level (2N918JX) * JANTXV level (2N918JV) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV * Radiation testing (total dose) upon request Features * * * * Hermetically sealed TO-72 metal can Also available in chip configuration Chip geometry 0003 Reference document: MIL-PRF-19500/301 Benefits * Qualification Levels: JAN, JANTX, and JANTXV * Radiation testing available Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage TC = 25C unless otherwise specified Symbol VCEO Rating 15 Collector-Base Voltage VCBO 30 Unit Volts Volts Emitter-Base Voltage VEBO 3 Volts IC 50 mA PT 200 1.14 mW mW/C TJ TSTG -65 to +200 C Collector Current, Continuous Power Dissipation, TA = 25C Derate linearly above 25C Operating Junction Temperature Storage Temperature Copyright 2002 Rev. F Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N918 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Symbol Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current V(BR)CEO Test Conditions Min IC = 3 mA Typ On Characteristics Units Volts 10 1 1 10 10 nA A A nA A 15 VCB = 25 Volts VCB = 30 Volts VCB = 25 Volts, TA = 150C VEB = 2.5 Volts VEB = 3 Volts ICBO1 ICBO2 ICBO3 IEBO1 IEBO2 Max Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% Parameter Symbol hFE1 hFE2 hFE3 hFE4 Base-Emitter Saturation Voltage VBEsat Test Conditions IC = 0.5 mA, VCE = 10 Volts IC = 3 mA, VCE = 1 Volts IC = 10 mA, VCE = 10 Volts IC = 3 mA, VCE = 1 Volts TA = -55C IC = 10 mA, IB = 1 mA Collector-Emitter Saturation Voltage VCEsat IC = 10 mA, IB = 1 mA DC Current Gain Min 10 20 20 10 Typ Max Units 200 1.0 Volts 0.4 Volts Max Units Dynamic Characteristics Parameter Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Symbol |hFE| COBO Noise Figure NF Power Gain Gpe Collector Base time constant rb'CC Collector efficiency Oscillator Power Output PO Copyright 2002 Rev. F Test Conditions VCE = 10 Volts, IC = 4 mA, f = 100 MHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VCE = 6 Volts, IC = 1 mA, f = 60 MHz, Rg = 2.5 M VCB = 12 Volts, IC = 6 mA, f = 200 MHz VCB = 10 Volts, IE = -4 mA, f = 79.8 MHz VCB = 15 Volts, IC = 8 mA, f = 500 MHz VCB = 15 Volts, IC = 8 mA, f = 500 MHz Min Typ 6 18 1.7 pF 6 dB dB 15 25 ps mW 30 25 % Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2