MOTORGLA SC XSTRS/R F MOTOROLA m= SEMICONDUCTOR TECHNICAL DATA op @ uauzesq ooaa709 3 T= 39-/3 IRF840 IRF841 IRF842 IRF843 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR These TMOS Power FETs are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. @ Silicon Gate for Fast Switching Speeds @ Low rpsion) to Minimize On-Losses. Specified at Elevated Temperature @ Rugged SOA is Power Dissipation Limited @ Source-to-Drain Diode Characterized for Use With Inductive Loads Dd & TMOS s MAXIMUM RATINGS Rati Symbot nF Unit ng we 40 | 041 | s42 | 243 Drain-Source Voltage Voss 500 450 500 450 Vde Drain-Gate Voltage VpGR 500 450 500 450 Vde (Rgg = 1.0 ma) Gate-Source Voltage Ves 20 Vde Drain Current Ade Continuous Ip 8.0 7.0 Pulsed lpm 32 28 Total Power Dissipation Pp @Te = 26C 125 Watts Derate above 25C 1.0 wre Operating and Storage Ty Tstg 55 to 150 C Temperature Range THERMAL CHARACTERISTICS Thermal Resistance SCV Junction to Case ReJc 1.0 Junction to Ambient Raja 62.5 Maximum Lead Temp. for Th 275 c Soldering Purposes, 1/8 from Case for 5 Seconds Part Number | Voss | FDSion) Ip IRF840 5OOV | 0.850 | 8.04 IRF841 450V } 0850 | BOA IRF842 500 V 1.100 | 7.0A IRF843 450V 1.100 | 70A See the MTP8N45 Designer's Data Sheet for a complete set of design curves for the product on this data sheet. The Designer's Data Sheet permits the design of most circuits entirely from the infor- mation presented. Limit curves representing boundaries on device characteristics are given to facilitate worst case design. STYLE PUN. GATE 2. DRA DRAW nOTES: 4, OIKENSIONING AND TOLERANCING PER ANSI YAS, 13982, 2. CONTROLLING DIMENSON. INCH. 3 DUM Z ORFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED CASE 221A-04 TO-220AB MOTOROLA TMOS POWER MOSFET DATA 3-143MOTOROLA SC XSTRS/R F739-/3B WE of bab72S4y 0089710 rf IRF840-843 . ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted) [ Characteristic Symbol Min Max unit | OFF CHARACTERISTICS Drain-Source Breakdown Voltage ViBR)DSS Vde (Vgg = 0, Ip = 0.25 mA) IRF841, IRF843 450 - IRF840, IRF842 500 - Zero Gate Voltage Drain Current Ipss mAdc (Vps = Rated Vpss. Vas = 0} _ 0.25 (Vps = 0.8 Rated Vpss. Vas = 0, Ty= 125C) _ 4,00 Gate-Body Leakage Current, Forward IGssF - 500 nAdc (VG@SF = 20 Vdc, Vps = 0} Gate-Body Leakage Current, Reverse IGssR - 500 nAdc (Vgsr = 20 Vde, Vps = 0} ON CHARACTERISTICS* Gate Threshold Voltage VGSith) 2.0 4.0 Vde (Vps = Vas. Ip = 0.25 mA) Static Drain-Source On-Resistance DS(on) Ohm (Vqg = 10 Vde, Ip = 4.0 Adc} IRF840, IRF841 _ 0.85 IRF842, IRF843 _- 1.0 On-State Drain Current (Vag = 10 V) 'p(on) Adc (Vpg 2 6 8 Vde) IRF840, IRF841 8.0 - (Vpg > 7.0 Vde} IRF842, IRF843 7.0 _ Forward Transconductance OFS mhos (Vps 2 6.8 V, Ip = 4.0 A) IRF840, IRF841 4.0 _ (Vps 2 7.0 V. Ip = 4.0 A) IRF842, IRF843 4.0 _ DYNAMIC CHARACTERISTICS Input Capacitance Cj - 1600 F pe (Vps = 25 V. Ves = 9. iss P Output Capacitance = 1.0 MHz) Coss - 350 Reverse Transfer Capacitance Crss - 150 SWITCHING CHARACTERISTICS* Turn-On Delay Time taion) _ 35 ns Rise Time (Vpp = 200 V, Ip = 4.0 Apk, tr _ 15 Turn-Off Delay Time Rgen = 4-7 Ohms) tafoff) _ 90 Fall Time tf _ 30 Total Gate Charge Qa, 40 (T 60 nc 8 (Vag = 10 V. Vpg = 0.8 9 ye) Gate-Source Charge Rated Vpss. |p = Rated Ip) Qgs 20 (Typ) - Gate-Drain Charge Oga 20 (Typ) _ SOURCE DRAIN DIODE CHARACTERISTICS* Forward On-Voltage {lg = Rated Ip, Vsp - | 1.9 (1) | Vde Forward Turn-On Time Vas = 0) ton Limited by stray inductance Reverse Recovery Time tre 600 (Typ) | - | ns INTERNAL PACKAGE INDUCTANCE (TO-220) {nternal Drain Inductance Lg nH (Measured from the contact screw on tab to center of die) 3.5 (Typ) _ (Measured from the drain lead 0.25 from package to center of die) 4.5 (Typ) ~ Internal Source Inductance Ls 7.5 (Typ) (Measured from the source lead 0.25" from package to source bond pad) *Pulse Test: Pulse Width < 300 ps, Duty Cycle < 2.0%. (3) Add 0.1 V for IRF840 and IRF841, a a MOTOROLA TMOS POWER MOSFET DATA 3-144