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Parameter: Symbol: Test Conditions: Min: Typ: Max: Unit:
Collector - Base Breakdown Voltage V(BR)CBO IC=-10μA IE=0 45 V
Collector - Emitter Breakdown Voltage V(BR)CEO IC=-10mA IB=0 45 V
Emmiter - Base Breakdown Voltage V(BR)EBO IE=-1.0μA IC=0 5 V
ICBO VCE=-45V,VBE=0 20 nA
IEBO VEB=4V,IC=0 20 nA
DC Current Gain hFE VCE=5V,IC=10μA G
H
J
K
VCE=5V,IC=2mA G
H
J
K
VCE=5V,IC=50mA G
H
J
K
20
20
40
100
120
180
250
380
50
70
90
100
140
200
300
460
220
310
460
630
Collector - Emitter Saturation Voltage VCE(sat) IC=10mA, IB=0.25mA
IC=50mA, IB=1.25mA
0.12
0.2
0.35
0.55
V
Base - Emitter Saturation Voltage VBE(sat) IC=10mA, IB=0.25mA
IC=50mA, IB=1.25mA
0.7
0.83
0.85
1.05
V
Base Emitter Voltage VBE IC=2.0mA ,VCE=5V 0.55 0.65 0.75 V
Transition Frequency fTVCE=5V, IC=20mA,
f=100MHz
250 MHz
Collector-base capacitance Ccb VCB=10V,IE=0,f=1MHz 3 pF
Emitter-base capacitance CEb VEB=0.5V,IE=0,f=1MHz 8
NF VCE=5V, IC=100uA
f=1kHz,RS=1kΩ
2dB
Maximum Ratings & Characteristics: Tamb=25o