ZPY3V9 to ZPY100
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Rev. 1.9, 22-Nov-11 1Document Number: 85790
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Zener Diodes
FEATURES
Silicon planar power Zener diodes
For use in stabilizing and clipping circuits with
high power rating
The Zener voltages are graded according to the
international E 12 standard. Smaller voltage
tolerances are available upon request
These diodes are also available in the MELF
case with the type designation ZMY3V9 to ZMY100
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
PRIMARY CHARACTERISTICS
PARAMETER VALUE UNIT
VZ range nom. 3.9 to 100 V
Test current IZT 5 to 100 mA
VZ specification Pulse current
Int. construction Single
ORDERING INFORMATION
DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY
ZPY3V9 to ZPY100 ZPY3V9 to ZPY100-series-TR 5000 (52 mm tape on 13" reel) 25 000/box
ZPY3V9 to ZPY100 ZPY3V9 to ZPY100-series-TAP 5000 per ammopack
(52 mm tape) 25 000/box
PACKAGE
PACKAGE NAME WEIGHT MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE SENSITIVITY
LEVEL
SOLDERING
CONDITIONS
DO-41 310 mg UL 94 V-0 MSL level 1
(according J-STD-020) 260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Power dissipation Valid provided that leads at a distance of 4 mm
from case are kept at ambient temperature Ptot 1300 mW
Zener current See table “Caharacteristics”
Junction to ambient air Valid provided that leads at a distance of 4 mm
from case are kept at ambient temperature RthJA 110 K/W
Junction temperature Tj175 °C
Storage temperature range Tstg - 55 to + 175 °C
ZPY3V9 to ZPY100
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Rev. 1.9, 22-Nov-11 2Document Number: 85790
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Notes
(1) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case
(2) Tested with pulses tp = 5 ms
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART NUMBER
ZENER VOLTAGE
RANGE (2)
TEST
CURRENT
REVERSE
VOLTAGE
DYNAMIC
RESISTANCE
f = 1 kHz
ADMISSIBLE
ZENER
CURRENT (1)
TEMPERATURE
COEFFICIENT OF ZENER
VOLTAGE
VZ at IZT1 IZT1 VR at IRZZ at IZT1 IZ TCVZ at IZT1
VmA VμA ΩmA 10-4/°C
MIN. NOM. MAX. TYP. MIN. MAX.
ZPY3V9 3.7 3.9 4.1 100 - 0.5 4 (< 7) 290 - 7 2
ZPY4V3 4 4.3 4.6 100 - 0.5 4 (< 7) 260 - 7 3
ZPY4V7 4.4 4.7 5 100 - 0.5 4 (< 7) 235 - 7 4
ZPY5V1 4.8 5.1 5.4 100 > 0.7 0.5 2 (< 5) 215 - 6 5
ZPY5V6 5.2 5.6 6 100 > 1.5 0.5 1 (< 2) 193 - 3 5
ZPY6V2 5.8 6.2 6.6 100 > 2.0 0.5 1 (< 2) 183 - 1 6
ZPY6V8 6.4 6.8 7.2 100 > 3.0 0.5 1 (< 2) 157 0 7
ZPY7V5 7 7.5 7.9 100 > 5.0 0.5 1 (< 2) 143 0 7
ZPY8V2 7.7 8.2 8.7 100 > 6.0 0.5 1 (< 2) 127 3 8
ZPY9V1 8.5 9.1 9.6 50 > 7.0 0.5 2 (< 4) 117 3 8
ZPY10 9.41 10 10.6 50 > 7.5 0.5 2 (< 4) 105 5 9
ZPY11 10.4 11 11.6 50 > 8.5 0.5 3 (< 7) 94 5 10
ZPY12 11.4 12 12.7 50 > 9.0 0.5 3 (< 7) 85 5 10
ZPY13 12.4 13 14.1 50 > 10 0.5 4 (< 9) 78 5 10
ZPY15 13.8 15 15.8 50 > 11 0.5 4 (< 9) 70 5 10
ZPY16 15.3 16 17.1 25 > 12 0.5 5 (< 10) 63 7 11
ZPY18 16.8 18 19.1 25 > 14 0.5 5 (< 11) 57 7 11
ZPY20 18.8 20 21.2 25 > 15 0.5 6 (< 12) 52 7 11
ZPY22 20.8 22 23.3 25 > 17 0.5 7 (< 13) 48 7 11
ZPY24 22.8 24 25.6 25 > 18 0.5 8 (< 14) 42 7 12
ZPY27 25.1 27 28.9 25 > 20 0.5 9 (< 15) 38 7 12
ZPY30 28 30 32 25 > 22.5 0.5 10 (< 20) 35 7 12
ZPY33 31 33 35 25 > 25 0.5 11 (< 20) 31 7 12
ZPY36 34 36 38 10 > 27 0.5 25 (< 60) 29 7 12
ZPY39 37 39 41 10 > 29 0.5 30 (< 60) 26 8 12
ZPY43 40 43 46 10 > 32 0.5 35 (< 80) 24 8 13
ZPY47 44 47 50 10 > 35 0.5 40 (< 80) 22 8 13
ZPY51 48 51 54 10 > 38 0.5 45 (< 100) 20 8 13
ZPY56 52 56 60 10 > 42 0.5 50 (< 100) 18 8 13
ZPY62 58 62 66 10 > 47 0.5 60 (< 130) 16 8 13
ZPY68 64 68 72 10 > 51 0.5 65 (< 130) 14 8 13
ZPY75 70 75 79 10 > 56 0.5 70 (< 160) 13 8 13
ZPY82 77 82 88 10 > 61 0.5 80 (< 160) 12 8 13
ZPY91 85 91 96 5 > 68 0.5 120 (< 250) 11 9 13
ZPY100 94 100 106 5 > 75 0.5 130 (< 250) 10 9 13
ZPY3V9 to ZPY100
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Rev. 1.9, 22-Nov-11 3Document Number: 85790
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BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Admissible Power Dissipation vs. Ambient Temperature
Fig. 2 - Pulse Thermal Resistance vs. Pulse Duration
Fig. 3 - Dynamic Resistance vs. Zener Current
Fig. 4 - Dynamic Resistance vs. Zener Current
Fig. 5 - Dynamic Resistance vs. Zener Current
Fig. 6 - Thermal Resistance vs. Lead Length
0100
200 °C
2
1
0
W
P
tot
T
ambgzpy1_04
ZPY...
10
-5
10
-4
10
-3
10
-2
10
-1
110
s
10
3
10
2
10
1
°C/W
2
5
4
3
2
5
4
3
2
5
4
3
r
thA
t
P
gzpy1_05
tP
v =
T
PI
___
T
tP
0.5
0.2
0.1
0.05
0.02
0.01
ZPY...
1
2
10 100
mA
10
3
10
2
1
Ω
r
zj
I
Zgzpy1_06
54
3254
3
2
5
4
3
2
5
4
3
2
5
4
3
10
77
ZPY5.1
ZPY4.3
ZPY18
ZPY12
ZPY7.5
ZPY6.2
ZPY1 ZPY10
ZPY...
ZPY...
0.1
2
110
mA
10
3
10
2
10
Ω
2
5
4
3
r
zj
I
Zgzpy1_07
54
3254
3
7
2
5
4
3
7
ZPY100
ZPY82
ZPY68
ZPY56
ZPY43
1
2
10 100
mA
100
10
1
Ω
2
5
4
3
r
zj
I
Zgzpy1_08
54
3254
3
7
2
5
4
3
7
ZPY43
ZPY36
ZPY30
ZPY24
ZPY22
ZPY...
ZPY18
ll
ZPY...
010
15 20
mm
200
100
0
°C/W
R
thA
lead length l
gzpy1_09
5
ZPY3V9 to ZPY100
www.vishay.com Vishay Semiconductors
Rev. 1.9, 22-Nov-11 4Document Number: 85790
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Breakdown Characteristics
Fig. 8 - Breakdown Characteristics
Fig. 9 - Breakdown Characteristics
PACKAGE DIMENSIONS in millimeters (inches): DO-41
012345678 9 1011 12131415 V
0
40
80
120
160
200
240
mA
I
Z
V
Zgzpy1_01
ZPY...
Tj = 25 °C
Test Current lZ
100 mA
50 mA
ZPY4.7
ZPY3.9
ZPY5.6
ZPY6.8
ZPY8.2
ZPY10
ZPY12
0 5 101520253035
40 45 50 V
10
20
30
40
50
60
mA
IZ
VZgzpy1_02
Tj = 25 °C
ZPY...
Test Current lZ
25 mA
10 mA
ZPY22
ZPY18
ZPY27
ZPY33
ZPY15
ZPY39
ZPY47
0
0100
200 V
0
10
20
mA
IZ
VZgzpy1_03
50 150
Test Current lZ
10 mA
5 mA
Tj = 25 °C
ZPY56
ZPY68
ZPY82
ZPY100
94 9368
Cathode identification
26 (1.024) min. 4.1 (0.161) max. 26 (1.024) min.
0.86 (0.034) max.
2.6 (0.102) max.
Document Number: 91000 www.vishay.com
Revision: 11-Mar-11 1
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