© 2008 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 500 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ500 V
VGSS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC= 25°C12A
IDM TC= 25°C, pulse width limited by TJM 30 A
IATC= 25°C12A
EAS TC= 25°C 600 mJ
dV/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns
PDTC= 25°C 200 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062) from case for 10s 300 °C
TSOLD Plastic body for 10s 260 °C
MdMounting torque (TO-220) 1.13 / 10 Nm/lb.in.
Weight TO-263 2.5 g
TO-220 3.0 g
DS99436F(04/08)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 500 V
VGS(th) VDS = VGS, ID = 1mA 3.0 5.5 V
IGSS VGS = ±30V, VDS = 0V ±100 nA
IDSS VDS = VDSS 5 μA
VGS = 0V TJ = 125°C 250 μA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 500 mΩ
PolarTM Power MOSFET
HiperFETTM
N-Channel Enhancement Mode
Avalanche Rated
IXFA12N50P
IXFP12N50P
VDSS = 500V
ID25 = 12A
RDS(on) ≤≤
≤≤
≤ 500mΩΩ
ΩΩ
Ω
G = Gate D = Drain
S = Source TAB = Drain
Features
zInternational standard packages
zUnclamped Inductive Switching
(UIS) rated
zLow package inductance
- easy to drive and to protect
Advantages
zEasy to mount
zSpace savings
zHigh power density
TO-263 (IXFA)
TO-220 (IXFP)
D(TAB)
G
S
GS
(TAB)
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IXYS reserves the right to change limits, test conditions, and dimensions.
IXFA12N50P
IXFP12N50P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
gfs VDS = 20V, ID = 0.5 • ID25, Note 1 7.5 13 S
Ciss 1830 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 182 pF
Crss 16 pF
td(on) Resistive Switching Times 22 ns
trVGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 27 ns
td(off) RG = 50Ω (External) 65 ns
tf 20 ns
Qg(on) 29 nC
Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 11 nC
Qgd 10 nC
RthJC 0.62 °C/W
RthCS (TO-220) 0.50 °C/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0V 12 A
ISM Repetitive, pulse width limited by TJM 48 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 300 ns
QRM 2.8 μC
IRM 18.2 A
Note 1: Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Pins: 1 - Gate 2 - Drain
TO-220 (IXFP) Outline
TO-263 (IXFA) Outline
IF = 6A, -di/dt = 150A/μs,
VR = 100V, VGS = 0V
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© 2008 IXYS CORPORATION, All rights reserved
IXFA12N50P
IXFP12N50P
Fig. 2. Extended Output Characteristics
@ 25
º
C
0
3
6
9
12
15
18
21
24
27
30
0 3 6 9 12151821242730
V
D S
- V ol ts
I
D
- Amperes
V
GS
= 10V
8V
7V
6V
Fig. 3. Output Characteri stics
@ 125
º
C
0
2
4
6
8
10
12
024681012
V
D S
- V o l ts
I
D
- Amperes
V
GS
= 10V
7V
5V
6V
Fig. 1. Output Characte ristics
@ 25
º
C
0
2
4
6
8
10
12
01234567
V
D S
- V ol ts
I
D
- Amperes
V
GS
= 10V
6V
7V
Fig . 4. R
DS(on
)
Normaliz ed to I
D
= 6A Value
vs. Junction Te m pera ture
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
D S ( o n )
- Normalized
I
D
= 12A
I
D
= 6A
V
GS
=
10V
Fig . 6. Drain Current vs. Case
Temperature
0
2
4
6
8
10
12
14
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
Fig. 5. R
DS(on)
Normalize d to I
D
= 6A Va lue
vs. Dra i n Current
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
036912151821242730
I
D
- A mperes
R
D S ( o n )
- Normalized
T
J
= 125
º
C
T
J
= 25
º
C
V
GS
=
10V
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IXYS reserves the right to change limits, test conditions, and dimensions.
IXFA12N50P
IXFP12N50P
Fig. 11. Ca pa cita nce
10
100
1000
10000
0 5 10 15 20 25 30 35 40
V
D S
- V ol ts
C apacitance - picoFarads
C
iss
C
oss
C
rss
f
= 1M Hz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 3 6 9 12 15 18 21 24 27 30
Q
G
- nanoCoul om bs
V
G S
- Vo lts
VDS
= 250V
ID = 6A
IG = 10mA
Fi g. 7. I nput Admitta nce
0
2
4
6
8
10
12
14
16
18
20
4.5 5.0 5.5 6.0 6.5 7.0 7.5
V
G S
- V o l ts
I
D
- Ampe r e s
TJ = 125ºC
25ºC
- 40ºC
Fig. 8. Tra nsconducta nce
0
3
6
9
12
15
18
21
24
27
0 2 4 6 8 101214161820
I
D
- A mpere s
g
f s
- Siemens
TJ = - 40ºC
25ºC
125ºC
F ig. 9. So u r ce Cur r ent v s. So u r ce-T o -Drain
Voltage
0
5
10
15
20
25
30
35
0.4 0.5 0.6 0.7 0.8 0.9 1.0
V
S D
- V o l ts
I
S
- Amp e re s
TJ
= 125ºC
TJ
= 25ºC
Fi g. 12. Fo rward-Bi as
Safe Operating Area
1
10
100
10 100 1000
V
D S
- V ol ts
I
D
- Ampe re s
100µs
1ms
DC
TJ = 150º C
TC = 25ºC
RDS(on) Limi
t
10ms
25µs
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© 2008 IXYS CORPORATION, All rights reserved
IXFA12N50P
IXFP12N50P
IXYS REF: T_12N50P(4J)4-14-08-D
Fig. 13. Maximum Transient Thermal Impedance
0.01
0.10
1.00
0.01 0.1 1 10 100 1000
P ul se Wi dth - m i l l i s e c onds
Z
( t h ) J C
-
º
C / W
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