PolarTM Power MOSFET HiperFETTM IXFA12N50P IXFP12N50P VDSS ID25 RDS(on) = 500V = 12A 500m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M 500 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 12 A IDM TC = 25C, pulse width limited by TJM 30 A IA EAS TC = 25C TC = 25C 12 600 A mJ dV/dt IS IDM, VDD VDSS, TJ 150C 20 V/ns PD TC = 25C 200 W -55 ... +150 150 -55 ... +150 C C C TJ TJM Tstg TO-263 (IXFA) TL 1.6mm (0.062) from case for 10s 300 C TSOLD Plastic body for 10s 260 C Md Mounting torque 1.13 / 10 Nm/lb.in. Weight TO-263 TO-220 2.5 3.0 g g (TO-220) G S (TAB) TO-220 (IXFP) G (TAB) D S G = Gate S = Source D = Drain TAB = Drain Features z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z Symbol Test Conditions (TJ = 25C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 500 VGS(th) VDS = VGS, ID = 1mA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 * ID25, Note 1 z z Easy to mount Space savings High power density V 5.5 V 100 nA 5 250 TJ = 125C A A 500 m DS99436F(04/08) (c) 2008 IXYS CORPORATION, All rights reserved http://store.iiic.cc/ IXFA12N50P IXFP12N50P Symbol Test Conditions (TJ = 25C, unless otherwise specified) Characteristic Values Min. Typ. Max. gfs VDS = 20V, ID = 0.5 * ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz 13 S 1830 182 16 pF pF pF Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 50 (External) 22 27 65 20 ns ns ns ns Qg(on) Qgs Qgd VGS= 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 29 11 10 nC nC nC RthJC RthCS (TO-220) 0.50 0.62 C/W C/W td(on) tr td(off) tf 7.5 TO-220 (IXFP) Outline Source-Drain Diode Pins: 1 - Gate 2 - Drain Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0V 12 A ISM Repetitive, pulse width limited by TJM 48 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 6A, -di/dt = 150A/s, VR = 100V, VGS = 0V 2.8 18.2 300 ns C A TO-263 (IXFA) Outline Note 1: Pulse test, t 300 s; duty cycle, d 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 http://store.iiic.cc/ 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFA12N50P IXFP12N50P Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25C @ 25C 12 30 VGS = 10V 8V 24 21 8 7V I D - Amperes I D - Amperes VGS = 10V 27 10 6 4 18 15 7V 12 9 6 2 6V 6V 3 0 0 0 1 2 3 4 5 6 7 0 3 6 9 V D S - Volts 18 21 24 27 30 Fig. 4. RDS(on) Normalized to I D = 6A Value vs. Junction Temperature @ 125C 12 2.6 VGS = 10V 2.4 7V 8 6 6V 4 VGS = 10V 2.2 R D S ( o n ) - Normalized 10 I D - Amperes 15 V D S - Volts Fig. 3. Output Characteristics 2.0 1.8 1.6 ID = 12A 1.4 ID = 6A 1.2 1.0 0.8 2 5V 0.6 0 0.4 0 2 4 6 8 10 12 -50 -25 VD S - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to I D = 6A Value vs. Drain Current Fig. 6. Drain Curre nt v s. Case Te mpe rature 14 3.4 12 VGS = 10V 3.0 TJ = 125 C 10 2.6 I D - Amperes R D S ( o n ) - Normalized 12 2.2 1.8 TJ = 25 C 1.4 8 6 4 1.0 2 0.6 0 0 3 6 9 12 I D 15 18 21 24 27 30 -50 -25 0 25 50 75 100 T C - Degrees Centigrade - Amperes (c) 2008 IXYS CORPORATION, All rights reserved http://store.iiic.cc/ 125 150 IXFA12N50P IXFP12N50P Fig. 8. Transconductance 20 27 18 24 16 21 14 g f s - Siemens I D - Amperes Fig. 7. Input Admittance 12 TJ = 125 C 10 25C - 40C 8 18 TJ = - 40C 15 25C 125C 12 9 6 6 4 3 2 0 0 4.5 5.0 5.5 6.0 VG S 6.5 7.0 0 7.5 2 4 8 I Fig. 9. Source Current vs. Source-To-Drain Voltage D 10 12 16 18 20 24 27 30 10 30 VG S - Volts 25 20 15 TJ = 125 C 9 VDS = 250V 8 ID = 6A 7 IG = 10m A 6 5 4 3 10 2 TJ = 25C 5 1 0 0 0.4 0.5 0.6 0.7 VS D 0.8 0.9 0 1.0 - Volts 3 6 9 12 Q - nanoCoulombs G 15 18 21 Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 10000 100 f = 1MHz TJ = 150C Ciss RDS(on) Limit I D - Amperes Capacitance - picoFarads 14 - Amperes Fig. 10. Gate Charge 35 I S - Amperes 6 - Volts 1000 Coss TC = 25C 25s 10 100 100s 1m s Crss DC 10 1 0 5 10 15 20 25 30 35 40 VD S - Volts 10 100 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. http://store.iiic.cc/ 10ms 1000 IXFA12N50P IXFP12N50P Fig. 13. Maximum Transient Thermal Impedance Z ( t h ) J C - C / W 1.00 0.10 0.01 0.01 0.1 1 10 100 1000 Pulse Width - milliseconds (c) 2008 IXYS CORPORATION, All rights reserved IXYS REF: T_12N50P(4J)4-14-08-D http://store.iiic.cc/