- Moisture sensitivity level 1
- Matte Tin(Sn) lead finish with Nickel(Ni) underplate
- Pb free and RoHS complian
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
- Case: SOT- 23 small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Weight: 0.008gram (approximately)
SYMBOL UNIT
P
D
mW
I
C
A
T
J
, T
STG
°C
SYMBOL UNIT
BC846
BC847
BC848
BC846
BC847
BC848
BC846
BC847
BC848
V
CB
= 30V I
E
= 0 I
CBO
nA
V
EB
= 5 V I
C
=0 I
EBO
μA
Collector-Emitter Saturation Voltage I
C
= 100mA I
B
= 5mA V
CE(sat)
V
Base-Emitter Saturation Voltage I
C
= 100mA I
B
= 5mA V
BE(sat)
V
Transition frequency V
CE
= 5V I
C
= 10 mA f= 100MHz f
T
MHz
Document Number: DS_S1404004
- Epitaxial planar die construction
- Surface mount device type
Taiwan Semiconductor
VALUE
Small Si gnal Product
NPN Small Si
g
nal Transistor
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25℃ unless otherwise noted)
SOT-23
BC846A/B, BC847A/B/C, BC848A/B/C
MECHANICAL DATA
BC847
BC848
FEATURES
Power dissipation 200
V
CBO
Collector-Base Voltage
V
(BR)EBO
V
6
6
5
PARAMETER
V
Collector-Emitter Breakdown Voltage I
C
= 10mA I
B
= 0 V
65
45
30
Collector-Emitter Voltage
Emitter-Base Voltage
BC848 5
V
CEO
BC846
BC846
BC847
BC848
BC846
BC847
V
V
V
80
50
30
65
45
30
Collector Current
Junction and Storage Temperature Range
0.1
-55 to + 150
6
6
V
EBO
Version: G14
PARAMETER
Collector-Base Breakdown Voltage I
C
= 10μAI
E
= 0
80
50
30
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
BC846A, BC847A, BC848A
V
CE
= 5V I
C
= 2mA
V
(BR)CBO
h
FE
Emitter-Base Breakdown Voltage I
E
= 1μAI
C
= 0
V
(BR)CEO
BC846B, BC847B, BC848B
BC847C, BC848C
220
450
800
200
420
-
0.5
1.1
-
-
-100
Notes: 1. Valid provided that electrodes are kept at ambient temperature
-
110
MAX
-
-
-
100
0.1
MIN
(TA=25℃ unless otherwise noted)
Document Number: DS_S1404004 Version: G14
BC846A/B, BC847A/B/C, BC848A/B/C
Taiwan Semiconductor
Small Si gnal Product
RATINGS AND CHARACTERISTICS CURVES (BC846A/B, BC847A/B/C, BC848A/B/C)
0.1
1
10
100
1 10 100 1000
Cob[pF], Capacitance
VCB[V], Collector-Base Voltage
Fig.5 Collector Output Capacitance
f=1MHz
1
10
100
1000
0.1 1 10 100
fT[MHz], Current Gain-Bandwidth Product
IC[mA], Collector Current
Fig. 6 Current Gain Bandwidth Product
VCE=5V
0
20
40
60
80
100
0 4 8 12 16 20
IC[mA], Collector Current
VCE[V], Collector-Emitter Voltage
Fig.1 Static Characteristic
IB= 400μAIB= 350μA
IB= 300μA
IB= 250μA
IB= 200μA
IB= 150μA
IB= 100μA
IB= 50μA
0
100
200
300
400
0 1 10 100 1000
Fig.2 DC Current Gain
VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
hFE
IC(mA)
(
1
)
(
2
)
(
3
)
0
200
400
600
800
1000
1200
0.1 1 10 100 1000
Fig.3 Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
VCE = 5 V.
(1) Tamb = -55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
VBE
(mV)
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
IC[mA], Collector Current
VBE[V], Base-Emitter Voltage
Fig. 4 Base-Emitter On Voltage
VCE = 2V
PART NO. MARKING
BC846A 1A
BC846B 1B
BC847A 1E
BC847B 1F
BC847C 1G
BC848A 1J
BC848B 1K
BC848C 1L
PART NO.
BC846A
BC846A
Document Number: DS_S1404004
RF G SOT-23 3K / 7" Reel
RF G SOT-23 3K / 7" Reel
RF G SOT-23 3K / 7" Reel
RF G SOT-23 3K / 7" Reel
RF G SOT-23 3K / 7" Reel
RF G SOT-23 3K / 7" Reel
ORDERING INFORMATION
PACKING CODE PACKING
3K / 7" Reel
RF G SOT-23 3K / 7" Reel
MANUFACTURE
CODE
BC846A/B, BC847A/B/C, BC848A/B/C
MANUFACTURE
CODE DESCRIPTION
D0
PACKAGE
RF G
Taiwan Semiconductor
Small Si gnal Product
(Note) SOT-23
PACKING CODE GREEN COMPOUND
CODE
Green compound
GREEN COMPOUND
CODE
Note: Manufacture special control, if empty means no special control requirement.
EXAMPLE
PREFERRED P/N
Version: G14
BC846A RFG RF G Green compound
BC846A-D0 RFG RF G
DIMENSIONS
Min Max Min Max
A 2.70 3.10 0.106 0.122
B 1.10 1.50 0.043 0.059
C 0.30 0.51 0.012 0.020
D 1.78 2.04 0.070 0.080
E 2.10 2.64 0.083 0.104
F 0.89 1.30 0.035 0.051
G
H
SUGG EST PAD LAYOUT
A
B
C
D
Document Number: DS_S1404004
Small Si gnal Product
Version: G14
2.0 0.079
BC846A/B
,
BC847A/B/C
,
BC848A/B/C
DIM.
0.95
0.9
Unit(mm)
Taiwan Semiconducto
r
Unit(mm) Unit(inch)
0.55 REF 0.022 REF
0.1 REF 0.004 REF
0.0310.8
Unit(inch)
DIM. Typ.
0.037
0.035
Typ.
Notice
Document Number: DS_S1404004
BC846A/B
,
BC847A/B/C
,
BC848A/B/C
Taiwan Semiconducto
r
Small Si gnal Product
Version: G14
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or
liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is
granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and
disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a
particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products
for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.
