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Page <1> V1.027/02/13
N-Channel Enhancement
Mode Field Effect Transistor
Features:
Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
SOT-363
Applications:
N-Channel Enhancement Mode Effect Transistor
Switching Application
Maximum Ratings:
Ratings at 25°C unless otherwise specied.
Parameter Symbol Value Units
Drain-Source voltage VDSS 60 V
Drain-Gate voltage (RGS ≤1MΩ) VDGR 60 V
Gate -source voltage - continuous
-Non Repetitive (tp <50μs) VGSS ±20
±40 V
Maximum drain current -continuous
-Pulsed ID115
800 mA
Power dissipation PD200 mW
Thermal resistance, junction-to-ambient RθJA 625 °C/W
Junction and storage temperature TJ, Tstg -55 to +150 °C
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Page <2> V1.027/02/13
N-Channel Enhancement
Mode Field Effect Transistor
Typical Characteristics:
T
a
= 25°C unless otherwise specied
Electrical Characteristics:
Ratings at 25°C unless otherwise specied
Parameter Symbol Test conditions Min. Typ. Max. Unit
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=10μA 60 70 - V
Gate threshold voltage VGS(th) VDS=VGS, ID=250μA 1 - 2
Gate-body leakage Forward
Reverse IGSS VDS=0V, VGS=20V
VDS=0V, VGS=-20V
-
-
-
-
100
-100 nA
Zero gate voltage drain current IDSS
VDS=60V, VGS=0V - - 1μA
VDS=60V, VGS=0V, Tj=125°C - - 500
On-state drain current ID(On) VGS=10V, VDS=7.5V 0.5 1- A
Drain-source on-voltage VDS(ON) VGS=10V, ID=500mA
VGS=5V, ID=50mA
-
-
0.6
0.09
3.75
1.5 V
Forward transconductance gFS VDS=10V, ID=200mA 80 - - mS
Static drain-source on-resistance RDS(ON) VGS=5V, ID=50mA
VGS=10V, ID=500mA, Tj=125°C
-
-
3.2
4.4
7.5
13.5
On-state drain current ID(ON) VGS=10V, VDS=7.5V 0.5 1- A
Drain-source diode forward voltage VSD VGS=0V, ID=115mA - 0.88 1.5 V
Input capacitance CISS
VDS=25V, VGS=0V, f=1MHz
- 20 50
pF
Output capacitance COSS -11 25
Reverse transfer capacitance CRSS - 2 5
Turn-on delay time tD(ON) VDD = 30V, ID= 0.2A,
RL = 150Ω, VGS= 10V, RGEN= 25Ω
- 7 20 ns
Turn-off delay time tD(OFF) -11 20 ns
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Page <3> V1.027/02/13
N-Channel Enhancement
Mode Field Effect Transistor
SOT-363
Dim. Min. Max.
A 2 2.2
B1.15 1.35
C0.95 Typ.
D0.25 Typ.
E 0.25 0.4
G 0.6 0.7
H0.02 0.1
J 0.1 Typ.
K 2.2 2.4
Dimensions : Millimetres
Package Outline:
Plastic surface mounted package
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Page <4> V1.027/02/13
N-Channel Enhancement
Mode Field Effect Transistor
Part Number Table
Description Part Number
N-Channel Enhancement Mode
Field Effect Transistor 2N7002DW-TR
Soldering Footprint:
Package Information:
Device Package Shipping
2N7002DW-TR SOT-363 3,000 / Tape & Reel
Dimensions : Millimetres
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