N-Channel Enhancement Mode Field Effect Transistor Features: * * * * * * Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-363 Applications: * N-Channel Enhancement Mode Effect Transistor * Switching Application Maximum Ratings: Ratings at 25C unless otherwise specified. Parameter Symbol Value Units Drain-Source voltage VDSS 60 V Drain-Gate voltage (RGS 1M) VDGR 60 V Gate -source voltage - continuous -Non Repetitive (tp <50s) VGSS 20 40 V Maximum drain current -continuous -Pulsed ID 115 800 mA Power dissipation PD 200 mW RJA 625 C/W TJ, Tstg -55 to +150 C Thermal resistance, junction-to-ambient Junction and storage temperature www.element14.com www.farnell.com www.newark.com Page <1> 27/02/13 V1.0 N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics: Ratings at 25C unless otherwise specified Parameter Symbol Test conditions Min. Typ. Max. V(BR)DSS VGS=0V, ID=10A 60 70 - VGS(th) VDS=VGS, ID=250A 1 - 2 Gate-body leakage Forward Reverse IGSS VDS=0V, VGS=20V VDS=0V, VGS=-20V - - 100 -100 Zero gate voltage drain current IDSS On-state drain current Drain-source breakdown voltage Gate threshold voltage Unit V nA VDS=60V, VGS=0V - - 1 VDS=60V, VGS=0V, Tj=125C - - 500 ID(On) VGS=10V, VDS=7.5V 0.5 1 - A VDS(ON) VGS=10V, ID=500mA VGS=5V, ID=50mA - 0.6 0.09 3.75 1.5 V gFS VDS=10V, ID=200mA 80 - - mS RDS(ON) VGS=5V, ID=50mA VGS=10V, ID=500mA, Tj=125C - 3.2 4.4 7.5 13.5 ID(ON) VGS=10V, VDS=7.5V 0.5 1 - A Drain-source diode forward voltage VSD VGS=0V, ID=115mA - 0.88 1.5 V Input capacitance CISS - 20 50 Output capacitance COSS - 11 25 Reverse transfer capacitance CRSS - 2 5 Turn-on delay time tD(ON) - 7 20 ns Turn-off delay time tD(OFF) - 11 20 ns Drain-source on-voltage Forward transconductance Static drain-source on-resistance On-state drain current VDS=25V, VGS=0V, f=1MHz VDD = 30V, ID= 0.2A, RL = 150, VGS= 10V, RGEN= 25 A pF Typical Characteristics: Ta = 25C unless otherwise specified www.element14.com www.farnell.com www.newark.com Page <2> 27/02/13 V1.0 N-Channel Enhancement Mode Field Effect Transistor Package Outline: Plastic surface mounted package SOT-363 Dim. Min. Max. A 2 2.2 B 1.15 1.35 C 0.95 Typ. D 0.25 Typ. E 0.25 0.4 G 0.6 0.7 H 0.02 0.1 J K 0.1 Typ. 2.2 2.4 Dimensions : Millimetres www.element14.com www.farnell.com www.newark.com Page <3> 27/02/13 V1.0 N-Channel Enhancement Mode Field Effect Transistor Soldering Footprint: Dimensions : Millimetres Package Information: Device Package Shipping 2N7002DW-TR SOT-363 3,000 / Tape & Reel Part Number Table Description Part Number N-Channel Enhancement Mode Field Effect Transistor 2N7002DW-TR Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. (c) Premier Farnell plc 2012. www.element14.com www.farnell.com www.newark.com Page <4> 27/02/13 V1.0