2002-2012 Microchip Technology Inc. DS21350E-page 1
TC1054/TC1055/TC1186
Features
• Low Ground Current for Longer Battery Life
• Low Dropout Voltage
• Choice of 50 mA (TC1054), 100 mA (TC1055)
and 150 mA (TC1186) Output
• High Output Voltage Accuracy
• Standard or Custom Output Voltages:
- 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V,
3.3V, 3.6V, 4.0V, 5.0V
• Power-Saving Shutdown Mode
• ERROR Output Can Be Used as a Low-Battery
Detector or Microcontroller-Reset Generator
• Overcurrent and Overtemperature Protection
• 5-Pin SOT-23 Package
• Pin-Compatible Upgrades for Bipolar Regulators
Applications
• Battery Operated Systems
• Portable Computers
• Medical Instruments
• Instrumentation
• Cellular/GSM/PHS Phones
• Linear Post-Regulators for SMPS
• Pagers
Typical Application
General Description
The TC1054, TC1055 and TC1186 are high accuracy
(typically ±0.5%) CMOS upgrades for older (bipolar)
low dropout regulators. Designed specifically for
battery-operated systems, the devices’ CMOS
construction minimizes ground current, extending
battery life. Total supply current is typically 50 µA at full
load (20 to 60 times lower than in bipolar regulators).
The devices’ key features include low noise operation,
low dropout voltage – typically 85 mV (TC1054),
180 mV (TC1055) and 270 mV (TC1186) at full load —
and fast response to step changes in load. An error
output (ERROR) is asserted when the devices are
out-of-regulation (due to a low input voltage or
excessive output current). ERROR can be used as a
low battery warning or as a processor RESET signal
(with the addition of an external RC network). Supply
current is reduced to 0.5 µA (maximum), with both
VOUT and ERROR disabled when the shutdown input is
low. The devices incorporate both overtemperature
and over-current protection.
The TC1054, TC1055 and TC1186 are stable with an
output capacitor of only 1 µF, and have a maximum
output current of 50 mA, 100 mA and 150 mA,
respectively. For higher output current regulators,
please refer to the TC1173 (IOUT = 300 mA) data sheet
(DS21632).
Package Type
VOUT
GND
1µF
+
VIN VIN VOUT
15
2
4
3SHDN
Shutdown Control
(from Power Control Logic)
ERROR
ERROR
1M
TC1054
TC1055
TC1186
Note: 5-Pin SOT-23 is equivalent to the EIAJ (SC-74A)
5
1
4
23
5-Pin SOT-23
TC1054
TC1055
TC1186
VOUT ERROR
SHDNGND
VIN
50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and ERROR Output
TC1054/TC1055/TC1186
DS21350E-page 2 2002-2012 Microchip Technology Inc.
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Input Voltage ..................................................................6.75V
Output Voltage ..................................... (-0.3V) to (VIN + 0.3V)
Power Dissipation ......................... Internally Limited (Note 6)
Maximum Voltage on Any Pin ...................VIN +0.3V to -0.3V
Operating Junction Temperature Range ..-40°C <TJ< +125°C
Storage Temperature.....................................-65°C to +150°C
† Notice: Stresses above those listed under "Absolute
Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, VIN =V
OUT +1V, I
L=100µA, C
L= 3.3 µF, SHDN >V
IH, TA = +25°C. Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
Parameters Sym Min Typ Max Units Conditions
Input Operating Voltage VIN 2.7 —6.50 VNote 8
Maximum Output Current IOUTMAX 50 ——mATC1054
100 —— TC1055
150 —— TC1186
Output Voltage VOUT VR – 2.5% V
R ±0.5% VR + 2.5% VNote 1
VOUT Temperature
Coefficient
TCVOUT —20 —ppm/°CNote 2
—40 —
Line Regulation VOUT/VIN —0.050.35 %(V
R + 1V) VIN6V
Load Regulation
TC1054; TC1055 VOUT/VOUT —0.5 2%(Note 3)
IL = 0.1 mA to IOUTMAX
TC1186 —0.5 3
Note 1: VR is the regulator output voltage setting. For example: VR = 1.8V, 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V,
4.0V, 5.0V.
2:
3: Regulation is measured at a constant junction temperature using low-duty-cycle pulse testing. Load regu-
lation is tested over a load range from 0.1 mA to the maximum specified output current. Changes in output
voltage due to heating effects are covered by the thermal regulation specification.
4: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its
nominal value.
5: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipa-
tion is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX
at VIN = 6V for T = 10 ms.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
junction temperature and the thermal resistance from junction-to-air (i.e., TA, TJ, JA). Exceeding the
maximum allowable power dissipation causes the device to initiate thermal shutdown. See Section 5.0
“Thermal Consi derati ons” for more details.
7: Hysteresis voltage is referenced by VR.
8: The minimum VIN has to justify the conditions: VIN VR + VDROPOUT and VIN 2.7V for IL = 0.1 mA to
IOUTMAX.
9: Apply for junction temperatures of -40°C to +85°C.
TC VOUT = (VOUTMAX – VOUTMIN)x 106
VOUT x T
2002-2012 Microchip Technology Inc. DS21350E-page 3
TC1054/TC1055/TC1186
Dropout Voltage VIN –V
OUT —2 —mVI
L = 100 µA
—65 — I
L = 20 mA
—85120 IL = 50 m
TC1055; TC1186 —180250 IL = 100 mA
TC1186 — 270 400 IL = 150 mA (Note 4)
Supply Current IIN —5080 µA SHDN = VIH,
IL = 0 µA (Note 9)
Shutdown Supply Current IINSD — 0.05 0.5 µA SHDN = 0V
Power Supply Rejection Ratio PSRR — 64 — dB f 1kHz
Output Short Circuit Current IOUTSC —300450mAV
OUT = 0V
Thermal Regulation VOUT/PD—0.04 —V/WNotes 5,6
Thermal Shutdown
Die Temperature
TSD —160 —°C
Thermal Shutdown Hysteresis TSD —10 —°C
Output Noise eN — 260 — nV/Hz IL = IOUTMAX
SHDN Input
SHDN Input High Threshold VIH 45 — — %VIN VIN = 2.5V to 6.5V
SHDN Input Low Threshold VIL ——15%V
IN VIN = 2.5V to 6.5V
ERROR Output
Minimum VIN Operating Voltage VINMIN 1.0 — — V
Output Logic Low Voltage VOL — — 400 mV 1 mA Flows to ERROR
ERROR Threshold Voltage VTH —0.95 x V
R—VSee Figure 4-2
ERROR Positive Hysteresis VHYS —50 —mVNote 7
VOUT to ERROR Delay tDELAY —2.5 —msV
OUT falling from
VR to VR – 10%
DC CHARACTERISTICS (CONTINUE D)
Electrical Specifications: Unless otherwise noted, VIN =V
OUT +1V, I
L=100µA, C
L= 3.3 µF, SHDN >V
IH, TA = +25°C. Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
Parameters Sym Min Typ Max Units Conditions
Note 1: VR is the regulator output voltage setting. For example: VR = 1.8V, 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V,
4.0V, 5.0V.
2:
3: Regulation is measured at a constant junction temperature using low-duty-cycle pulse testing. Load regu-
lation is tested over a load range from 0.1 mA to the maximum specified output current. Changes in output
voltage due to heating effects are covered by the thermal regulation specification.
4: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its
nominal value.
5: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipa-
tion is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX
at VIN = 6V for T = 10 ms.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
junction temperature and the thermal resistance from junction-to-air (i.e., TA, TJ, JA). Exceeding the
maximum allowable power dissipation causes the device to initiate thermal shutdown. See Section 5.0
“Thermal Consi derati ons” for more details.
7: Hysteresis voltage is referenced by VR.
8: The minimum VIN has to justify the conditions: VIN VR + VDROPOUT and VIN 2.7V for IL = 0.1 mA to
IOUTMAX.
9: Apply for junction temperatures of -40°C to +85°C.
TC VOUT = (VOUTMAX – VOUTMIN)x 106
VOUT x T
TC1054/TC1055/TC1186
DS21350E-page 4 2002-2012 Microchip Technology Inc.
2.0 TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, VIN = VOUT + 1V, IL = 100 µA, CL = 3.3 µF, SHDN > VIH, TA = +25°C.
FIGURE 2-1: Dropout Voltage vs.
Temperature (ILOAD = 10 mA).
FIGURE 2-2: Dropout Voltage vs.
Temperature (ILOAD = 100 mA).
FIGURE 2-3: Ground Current vs. VIN
(ILOAD = 10 mA).
FIGURE 2-4: Dropout Voltage vs.
Temperature (ILOAD = 50 mA) .
FIGURE 2-5: Dropout Voltage vs.
Temperature (ILOAD = 150 mA) .
FIGURE 2-6: Ground Current vs. VIN
(ILOAD = 100 mA).
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0.000
0.002
0.004
0.006
0.008
0.010
0.012
0.014
0.016
0.018
0.020
-40 -20 0 20 50 70 125
DROPOUT VOLTAGE (V)
I
LOAD
= 10 mA
C
IN
= 1 μF
C
OUT
= 1 μF
TEMPERATURE (°C)
0.000
0.020
0.040
0.060
0.080
0.100
0.120
0.140
0.160
0.180
0.200
-40 -20 0 20 50 70 125
DROPOUT VOLTAGE (V)
I
LOAD
= 100 mA
C
IN
= 1 μF
C
OUT
= 1 μF
TEMPERATURE (°C)
0
10
20
30
40
50
60
70
80
90
GND CURRENT (
μ
A)
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
I
LOAD = 10 mA
CIN
= 1 μF
C
OUT
= 1 μF
V
IN
(V)
0.000
0.010
0.020
0.030
0.040
0.050
0.060
0.070
0.080
0.090
0.100
-40 -20 0 20 50 70 125
DROPOUT VOLTAGE (V)
I
LOAD
= 50 mA
C
IN
= 1 μF
C
OUT
= 1 μF
TEMPERATURE (°C)
0.000
0.050
0.100
0.150
0.200
0.250
0.300
-40 -20 0 20 50 70 125
DROPOUT VOLTAGE (V)
I
LOAD
= 150 mA
C
IN
= 1 μF
C
OUT
= 1 μF
TEMPERATURE (°C)
0
10
20
30
40
50
60
70
80
90
GND CURRENT (
μ
A)
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
I
LOAD
= 100 mA
C
IN
= 1 μF
C
OUT
= 1 μF
V
IN
(V)
2002-2012 Microchip Technology Inc. DS21350E-page 5
TC1054/TC1055/TC1186
Note: Unless otherwise indicated, VIN = VOUT + 1V, IL = 100 µA, CL = 3.3 µF, SHDN > VIH, TA = +25°C.
FIGURE 2-7: Ground Current vs. VIN
(ILOAD = 150 mA).
FIGURE 2-8: VOUT vs. VIN
(ILOAD =100mA).
FIGURE 2-9: VOUT vs. VIN
(ILOAD =150mA).
FIGURE 2-10: VOUT vs. VIN
(ILOAD =0mA).
FIGURE 2-11: Output Voltage (3.3V) vs.
Temperature (ILOAD = 10 mA) .
FIGURE 2-12: Output Voltage (5V) vs.
Temperature (ILOAD = 10 mA) .
0
10
20
30
40
50
60
70
80
GND CURRENT (μA)
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
I
LOAD
= 150 mA
C
IN
= 1 μF
C
OUT
= 1 μF
V
IN
(V)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
I
LOAD
= 100 mA
C
IN
= 1 μF
C
OUT
= 1 μF
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
V
IN
(V)
V
OUT
(V)
3.274
3.276
3.278
3.280
3.282
3.284
3.286
3.288
3.290
-40 -20 -10 0 20 40 85 125
I
LOAD
= 150 mA
C
IN
= 1 μF
C
OUT
= 1 μF
V
IN
= 4.3V
TEMPERATURE (°C)
V
OUT
(V)
3.275
3.280
3.285
3.290
3.295
3.300
3.305
3.310
3.315
3.320
-40 -20 -10 0 20 40 85 125
I
LOAD
= 10 mA
C
IN
= 1 μF
C
OUT
= 1 μF
V
IN
= 4.3V
TEMPERATURE (°C)
V
OUT
(V)
4.985
4.990
4.995
5.000
5.005
5.010
5.015
5.020
5.025
-40 -20 -10 0 20 40 85 125
I
LOAD
= 10 mA
V
IN
= 6V
C
IN
= 1 μF
C
OUT
= 1 μF
TEMPERATURE (°C)
V
OUT
(V)
TC1054/TC1055/TC1186
DS21350E-page 6 2002-2012 Microchip Technology Inc.
Note: Unless otherwise indicated, VIN = VOUT + 1V, IL = 100 µA, CL = 3.3 µF, SHDN > VIH, TA = +25°C.
FIGURE 2-13: Output Voltage (5V) vs.
Temperature (ILOAD = 10 mA).
FIGURE 2-14: GND Current vs.
Temperature (ILOAD = 10 mA).
FIGURE 2-15: GND Current vs.
Temperature (ILOAD = 150 mA).
FIGURE 2-16: Output Noise vs. Frequency.
FIGURE 2-17: Stability Region vs. Load
Current.
FIGURE 2-18: Measure Rise Time of 3.3V
LDO.
4.974
4.976
4.978
4.980
4.982
4.984
4.986
4.988
4.990
4.992
4.994
-40 -20 -10 0 20 40 85 125
I
LOAD
= 150 mA
V
IN
= 6V
C
IN
= 1 μF
C
OUT
= 1 μF
TEMPERATURE (°C)
V
OUT
(V)
0
10
20
30
40
50
60
70
-40 -20 -10 0 20 40 85 125
GND CURRENT (
μ
A)
I
LOAD
= 10 mA
V
IN
= 6V
C
IN
= 1 μF
C
OUT
= 1 μF
TEMPERATURE (°C)
0
10
20
30
40
50
60
70
80
-40 -20 -10 0 20 40 85 125
GND CURRENT (μA)
I
LOAD
= 150 mA
V
IN
= 6V
C
IN
= 1 μF
C
OUT
= 1 μF
TEMPERATURE (°C)
10.0
1.0
0.1
0.0
0.01K 0.1K 1K 10K 100K 1000K
FREQUENCY (Hz)
NOISE (μV/√Hz)
R
LOAD
= 50 Ω
C
OUT
= 1 μF
C
IN
= 1 μF
1000
100
10
1
0.1
0.01
010 20 30 40 50 60 70 80 90 100
LOAD CURRENT (mA)
C
OUT
ESR
(Ω)
C
OUT
= 1 μF
to 10 μF
Stable Region
V
SHDN
V
OUT
Conditions: CIN = 1 µF, COUT = 1 µF,
ILOAD = 100 mA, VIN = 4.3V, Temperature = +25°C,
Fall Time = 184 µs
2002-2012 Microchip Technology Inc. DS21350E-page 7
TC1054/TC1055/TC1186
Note: Unless otherwise indicated, VIN = VOUT + 1V, IL = 100 µA, CL = 3.3 µF, SHDN > VIH, TA = +25°C.
FIGURE 2-19: Measure Rise Time of 5.0V
LDO.
FIGURE 2-20: Thermal Shutdown
Response of 5.0V LDO.
FIGURE 2-21: Measure Fall Time of 3.3V
LDO.
FIGURE 2-22: Measure Fall Time of 5.0V
LDO.
V
SHDN
V
OUT
Conditions: CIN = 1 µF, COUT = 1 µF,
ILOAD = 100 mA, VIN = 6V, Temperature = +25°C,
Fall Time = 192 µs
V
OUT
Conditions: VIN = 6V, CIN = 0 µF, COUT = 1 µF
ILOAD was increased until temperature of die
reached about +160°C, at which time integrated ther-
mal protection circuitry shuts the regulator off when
die temperature exceeds approximately +160°C.
The regulator remains off until die temperature drops
to approximately +150°C.
V
SHDN
V
OUT
Conditions: CIN = 1 µF, COUT = 1 µF,
ILOAD = 100 mA, VIN = 4.3V, Temperature = +25°C,
Fall Time = 52 µs
VSHDN
VOUT
Conditions: CIN = 1 µF, COUT = 1 µF,
ILOAD = 100 mA, VIN = 6V, Temperature = +25°C,
Fall Time = 88 µs
TC1054/TC1055/TC1186
DS21350E-page 8 2002-2012 Microchip Technology Inc.
3.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Tab l e 3 - 1 .
3.1 Unregulated Supply Input (VIN)
Connect unregulated input supply to the VIN pin. If
there is a large distance between the input supply and
the LDO regulator, some input capacitance is
necessary for proper operation. A 1 µF capacitor
connected from VIN to ground is recommended for
most applications.
3.2 Ground Terminal (GND)
Connect the unregulated input supply ground return to
GND. Also connect the negative side of the 1 µF typical
input decoupling capacitor close to GND and the
negative side of the output capacitor COUT to GND.
3.3 Shutdown Control Input (SHDN )
The regulator is fully enabled when a logic-high is
applied to SHDN. The regulator enters shutdown when
a logic-low is applied to SHDN. During shutdown,
output voltage falls to zero, ERROR is open-circuited
and supply current is reduced to 0.5 µA (maximum).
3.4 Out Of Regulation Flag (ERROR)
ERROR goes low when VOUT is out-of-tolerance by
approximately -5%.
3.5 Regulated Voltage Output (VOUT)
Connect the output load to VOUT of the LDO. Also
connect the positive side of the LDO output capacitor
as close as possible to the VOUT pin.
TABLE 3-1: PIN FUNCTION TABLE
Pin No.
SOT-23 Symbol Description
1V
IN Unregulated supply input
2 GND Ground terminal
3 SHDN Shutdown control input
4ERROR
Out-of-Regulation Flag (Open-drain output)
5V
OUT Regulated voltage output
2002-2012 Microchip Technology Inc. DS21350E-page 9
TC1054/TC1055/TC1186
4.0 DETAILED DESCRIPTION
The TC1054, TC1055 and TC1186 are precision fixed
output voltage regulators (If an adjustable version is
desired, please see the TC1070/TC1071/TC1187 data
sheet (DS21353)). Unlike bipolar regulators, the
TC1054, TC1055 and TC1186 supply current does not
increase with load current.
Figure 4-1 shows a typical application circuit, where the
regulator is enabled any time the shutdown input
(SHDN) is at or above VIH, and shutdown (disabled)
when SHDN is at or below VIL. SHDN may be
controlled by a CMOS logic gate or I/O port of a
microcontroller. If the SHDN input is not required, it
should be connected directly to the input supply. While
in Shutdown, supply current decreases to 0.05 µA
(typical), VOUT falls to zero volts, and ERROR is open-
circuited.
FIGURE 4-1: Typical App li cat io n Circui t.
4.1 ERROR Open-Drain Output
ERROR is driven low whenever VOUT falls out of
regulation by more than -5% (typical). This condition
may be caused by low input voltage, output current
limiting or thermal limiting. The ERROR threshold is 5%
below rated VOUT, regardless of the programmed
output voltage value (e.g. ERROR = VOL at 4.75V
(typical) for a 5.0V regulator and 2.85V (typical) for a
3.0V regulator). ERROR output operation is shown in
Figure 4-2.
Note that ERROR is active when VOUT falls to VTH and
inactive when VOUT rises above VTH by VHYS.
As shown in Figure 4-1, ERROR can be used either as
a battery low flag or as a processor RESET signal (with
the addition of timing capacitor C2). R1xC
2 should be
chosen to maintain ERROR below VIH of the processor
RESET input for at least 200 ms to allow time for the
system to stabilize. Pull-up resistor R1 can be tied to
VOUT
, VIN or any other voltage less than (VIN +0.3V).
FIGURE 4-2: Error Output Operation.
4.2 Output Capacitor
A 1 µF (minimum) capacitor from VOUT to ground is
recommended. The output capacitor should have an
effective series resistance greater than 0.1 and less
than 10.0, with a resonant frequency above 1 MHz. A
1 µF capacitor should be connected from VIN to GND if
there is more than 10 inches of wire between the
regulator and the AC filter capacitor, or if a battery is
used as the power source. Aluminum electrolytic or
tantalum capacitor types can be used (since many
aluminum electrolytic capacitors freeze at approxi-
mately -30°C, solid tantalums are recommended for
applications operating below -25°C). When operating
from sources other than batteries, supply-noise
rejection and transient response can be improved by
increasing the value of the input and output capacitors
and employing passive filtering techniques.
or RESET
VOUT
SHDN
GND
ERROR
+
VIN VOUT
1µF
+
Battery
+
0.2 µF
C2
R1
1MΩ
V+
BATTLOW
1µF
C1
TC1054
TC1055
TC1186
C2 Required Only if
ERROR is used as a
Processor RESET
Signal (see Text)
Shutdown
Control (to
CMOS Logic or
Tie to VIN if
unused)
VTH
VOUT
ERROR
VIH
VOL
HYSTERESIS (VH)
tDELAY
TC1054/TC1055/TC1186
DS21350E-page 10 2002-2012 Microchip Technology Inc.
5.0 THERMAL CONSIDERATIONS
5.1 Thermal Shutdown
Integrated thermal protection circuitry shuts the
regulator off when die temperature exceeds +160°C.
The regulator remains off until the die temperature
drops to approximately +150°C.
5.2 Power Dissipation
The amount of power the regulator dissipates is
primarily a function of input voltage, output voltage and
output current. The following equation is used to
calculate worst-case actual power dissipation:
EQUATION 5-1:
The maximum allowable power dissipation
(Equation 5-2) is a function of the maximum ambient
temperature (TAMAX), the maximum allowable die
temperature (TJMAX) and the thermal resistance from
junction-to-air (JA). The 5-Pin SOT-23 package has a
JA of approximately 220°C/Watt.
EQUATION 5-2:
Equation 5-1 can be used in conjunction with
Equation 5-2 to ensure regulator thermal operation is
within limits.
For example:
Actual power dissipation:
Maximum allowable power dissipation:
In this example, the TC1054 dissipates a maximum of
20.7 mW; below the allowable limit of 318 mW. In a
similar manner, Equation 5-1 and Equation 5-2 can be
used to calculate maximum current and/or input
voltage limits.
5.3 Layout Considerations
The primary path of heat conduction out of the package
is via the package leads. Layouts having a ground
plane, wide traces at the pads and wide power supply
bus lines, combine to lower θJA and increase the max-
imum allowable power dissipation limit.
PDVINMAX VOUTMIN
–ILOADMAX
Where:
PD= Worst-case actual power dissipation
VINmax = Maximum voltage on VIN
VOUTmin = Minimum regulator output voltage
ILOADmax = Maximum output (load) current
Where all terms are previously defined.
PDMAX TJMAX TAMAX
–
JA
--------------------------------------------=
Given:
VINMAX = 3.0V +5%
VOUTMIN = 2.7V – 2.5%
ILOADMAX = 40 mA
TJMAX = +125°C
TAMAX = +55°C
Find: 1. Actual power dissipation
2. Maximum allowable dissipation
PDVINMAX VOUTMIN
–ILOADMAX
3.0 1.05
2.7 0.975
–40 10-3
=
20.7mW=
PDMAX TJMAX TAMAX
–
JA
--------------------------------------------=
125 55–
220
-------------------------=
318mW=
2002-2012 Microchip Technology Inc. DS21350E-page 11
TC1054/TC1055/TC1186
6.0 PACKAGING INFORMATION
6.1 Package Marking Information
Legend: XX...X Customer-specific information
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
*This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
3
e
3
e
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
5-Lead SOT-23 Example
XXNN
CY25
(V) TC1054
Code TC1055
Code TC1186
Code
1.8 CYNN DYNN PYNN
2.5 C1NN D1NN P1NN
2.6 CTNN DTNN PVNN
2.7 C2NN D2NN P2NN
2.8 CZNN DZNN PZNN
2.85 C8NN D8NN P8NN
3.0 C3NN D3NN P3NN
3.3 C4NN D4NN P5NN
3.6 C9NN D9NN P9NN
4.0 C0NN D0NN P0NN
5.0 C6NN D6NN P7NN
TC1054/TC1055/TC1186
DS21350E-page 12 2002-2012 Microchip Technology Inc.
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)RRW$QJOH I ± 
/HDG7KLFNQHVV F  ± 
/HDG:LGWK E  ± 
φ
N
b
E
E1
D
123
e
e1
A
A1
A2 c
L
L1
0LFURFKLS 7HFKQRORJ\ 'UDZLQJ &%
2002-2012 Microchip Technology Inc. DS21350E-page 13
TC1054/TC1055/TC1186
5-Lead Plastic Small Outline Transistor (CT) [SOT-23]
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
TC1054/TC1055/TC1186
DS21350E-page 14 2002-2012 Microchip Technology Inc.
NOTES:
2002-2012 Microchip Technology Inc. DS21350E-page 15
TC1054/TC1055/TC1186
APPENDIX A: REVISION HISTORY
Revision E (December 2012)
The following is the list of modifications:
1. Updated the Input Voltage value in Absolute
Maximum Ratings † section.
2. Updated Section 6.0, Packaging Information.
3. Updated Product Identification System.
Revision D (February 2007)
• Corrected standard output voltages on page 1
and in Section , Product Identification System.
• Added TDELAY parameter in DC Characteristics
table in Section 1.0, Electrical Characteristics.
• Changes to Figure 4-2.
•Section 6.0, Packaging Information: Corrected
SOT-23 Packaging Information.
Revision C (March 2003)
• Undocumented changes.
Revision B (May 2002)
• Undocumented changes.
Revision A (March 2002)
• Original Release of this Document.
TC1054/TC1055/TC1186
DS21350E-page 16 2002-2012 Microchip Technology Inc.
NOTES:
2002-2012 Microchip Technology Inc. DS21350E-page 17
TC1054/TC1055/TC1186
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
Device: TC1054: 50 mA LDO with Shutdown and ERROR output
TC1055: 100 mA LDO with Shutdown and ERROR output
TC1186: 150 mA LDO with Shutdown and ERROR output
Output Voltage *: 1.8 = 1.8V “Standard”
2.5 = 2.5V “Standard”
2.6 = 2.6V “Standard”
2.7 = 2.7V “Standard”
2.8 = 2.8V “Standard”
2.85 = 2.85V “Standard”
3.0 = 3.0V “Standard”
3.3 = 3.3V “Standard”
3.6 = 3.6V “Standard”
4.0 = 4.0V “Standard”
5.0 = 5.0V “Standard”
*Contact factory for other output voltage options.
Temperature Range: V = -40°C to +125°C (Various)
Package: CT713 = Plastic Small Outline Transistor (SOT-23),
Tape and Reel
PART NO. X.X XXXXX
PackageOutput
Voltage
Device
Examples:
a) TC1054-1.8VCT713: 1.8V LDO Regulator, Various
Temp., 5LD SOT-23 Package
b) TC1054-2.5VCT713: 2.5V LDO Regulator, Various
Temp., 5LD SOT-23 Package
c) TC1054-2.6VCT713: 2.6V LDO Regulator, Various
Temp., 5LD SOT-23 Package
d) TC1054-2.7VCT713: 2.7V LDO Regulator, Various
Temp., 5LD SOT-23 Package
e) TC1054-2.8VCT713: 2.8V LDO Regulator, Various
Temp., 5LD SOT-23 Package
f) TC1054-2.85VCT713: 2.85V LDO Regulator, Various
Temp., 5LD SOT-23 Package
g) TC1054-3.0VCT713: 3.0V LDO Regulator, Various
Temp., 5LD SOT-23 Package
h) TC1054-3.3VCT713: 3.3V LDO Regulator, Various
Temp., 5LD SOT-23 Package
i) TC1054-3.6VCT713: 3.6V LDO Regulator, Various
Temp., 5LD SOT-23 Package
j) TC1054-4.0VCT713: 4.0V LDO Regulator, Various
Temp., 5LD SOT-23 Package
k) TC1054-5.0VCT713: 5.0V LDO Regulator, Various
Temp., 5LD SOT-23 Package
a) TC1055-1.8VCT713: 1.8V LDO Regulator, Various
Temp., 5LD SOT-23 Package
b) TC1055-2.5VCT713: 2.5V LDO Regulator, Various
Temp., 5LD SOT-23 Package
c) TC1055-2.6VCT713: 2.6V LDO Regulator, Various
Temp., 5LD SOT-23 Package
d) TC1055-2.7VCT713: 2.7V LDO Regulator, Various
Temp., 5LD SOT-23 Package
e) TC1055-2.8VCT713: 2.8V LDO Regulator, Various
Temp., 5LD SOT-23 Package
f) TC1055-2.85VCT713: 2.85V LDO Regulator, Various
Temp., 5LD SOT-23 Package
g) TC1055-3.0VCT713: 3.0V LDO Regulator, Various
Temp., 5LD SOT-23 Package
h) TC1055-3.3VCT713: 3.3V LDO Regulator, Various
Temp., 5LD SOT-23 Package
i) TC1055-3.6VCT713: 3.6V LDO Regulator, Various
Temp., 5LD SOT-23 Package
j) TC1055-4.0VCT713: 4.0V LDO Regulator, Various
Temp., 5LD SOT-23 Package
k) TC1055-5.0VCT713: 5.0V LDO Regulator, Various
Temp., 5LD SOT-23 Package
a) TC1186-1.8VCT713: 1.8V LDO Regulator, Various
Temp., 5LD SOT-23 Package
b) TC1186-2.5VCT713: 2.5V LDO Regulator, Various
Temp., 5LD SOT-23 Package
c) TC1186-2.6VCT713: 2.6V LDO Regulator, Various
Temp., 5LD SOT-23 Package
d) TC1186-2.7VCT713: 2.7V LDO Regulator, Various
Temp., 5LD SOT-23 Package
e) TC1186-2.8VCT713: 2.8V LDO Regulator, Various
Temp., 5LD SOT-23 Package
f) TC1186-2.85VCT713: 2.85V LDO Regulator, Various
Temp., 5LD SOT-23 Package
g) TC1186-3.0VCT713: 3.0V LDO Regulator, Various
Temp., 5LD SOT-23 Package
h) TC1186-3.3VCT713: 3.3V LDO Regulator, Various
Temp., 5LD SOT-23 Package
i) TC1186-3.6VCT713: 3.6V LDO Regulator, Various
Temp., 5LD SOT-23 Package
j) TC1186-4.0VCT713: 4.0V LDO Regulator, Various
Temp., 5LD SOT-23 Package
k) TC1186-5.0VCT713: 5.0V LDO Regulator, Various
Temp., 5LD SOT-23 Package
X
Temperature
Range
TC1054/TC1055/TC1186
DS21350E-page 18 2002-2012 Microchip Technology Inc.
NOTES:
2002-2012 Microchip Technology Inc. DS21350E-page 19
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash
and UNI/O are registered trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MTP, SEEVAL and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
Analog-for-the-Digital Age, Application Maestro, BodyCom,
chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O,
Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA
and Z-Scale are trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
GestIC and ULPP are registered trademarks of Microchip
Technology Germany II GmbH & Co. & KG, a subsidiary of
Microchip Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2002-2012, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 978-1-62076-721-4
Note the following details of the code protection feature on Microchip devices:
• Microchip products meet the specification contained in their particular Microchip Data Sheet.
• Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
• Microchip is willing to work with the customer who is concerned about the integrity of their code.
• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperiph erals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
QUALITY MANAGEMENT S
YSTEM
CERTIFIED BY DNV
== ISO/TS 16949 ==
DS21350E-page 20 2002-2012 Microchip Technology Inc.
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11/29/12