Continental Device India Limited Data Sheet Page 1 of 3
TIP31, 31A, 31B, 31C NPN PLASTIC POWER TRANSISTORS
TIP32, 32A, 32B, 32C PNP PLASTIC POWER TRANSISTORS
General Purpose Amplifier and Switching Applications
ABSOLUTE MAXIMUM RATINGS 31 31A 31B 31C
32 32A 32B 32C
Collector-base voltage (open emitter) VCBO max. 40 60 80 100 V
Collector-emitter voltage (open base) VCEO max. 40 60 80 100 V
Collector current ICmax. 3.0 A
Total power dissipation up to TC = 25°C Ptot max. 40 W
Junction temperature Tjmax. 150 °C
Collector-emitter saturation voltage
IC = 3 A; IB = 375 mA VCEsat max. 1.2 V
D.C. current gain
IC = 3 A; VCE = 4 V hFE min. 10
max. 50
RATINGS (at TA=25°C unless otherwise specified)
Limiting values 31 31A 31B 31C
32 32A 32B 32C
Collector-base voltage (open emitter) VCBO max. 40 60 80 100 V
Collector-emitter voltage (open base) VCEO max. 40 60 80 100 V
Emitter-base voltage (open collector) VEBO max. 5.0 V
TIP31, TIP31A, TIP31B, TIP31C
TIP32, TIP32A, TIP32B, TIP32C
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
B
123
J
M
G
D
H
A
O
O
K
N
L
FE
C
DIM MIN. MAX.
All dim insions in m m .
A 14.42 16.51
B 9.63 10.67
C 3.56 4.83
D0.90
E 1.15 1.40
F 3.75 3.88
G 2.29 2.79
H 2.54 3.43
J0.56
K 12.70 14.73
L 2.80 4.07
M 2.03 2.92
N 31.24
ODEG 7
12
3
4
IS / IECQ C 700000
IS / IECQ C 750100
IS/IS O 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
TO-220 Plastic Package
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Boca Semiconductor Corp. (BSC)
Continental Device India Limited Data Sheet Page 2 of 3
Collector current ICmax. 3.0 A
Collector current (Peak) ICM max. 5.0 A
Base current IBmax. 1.0 A
Total power dissipation upto TC=25°C Ptot max. 40 W
Derate above 25°C max 0.32
W/
°
C
Total power dissipation upto TA=25°C Ptot max. 2 W
Derate above 25°C max 0.016
W/
°
C
Junction temperature Tjmax. 150 °C
Storage temperature Tstg –65 to +150 ºC
THERMAL RESISTANCE
From junction to case Rth j–c 3.125 °
C/W
From junction to ambient Rth j–a 62.5 °
C/W
CHARACTERISTICS
Tamb = 25°C unless otherwise specified 31 31A 31B 31C
32 32A 32B 32C
Collector cutoff current
IB = 0; VCE = 30V ICEO max. 0.3 0.3 – – mA
IB = 0; VCE = 60V ICEO max. – – 0.3 0.3 mA
VBE = 0; VCE = VCEO(max) ICES max. 0.2 mA
Emitter cut-off current
IC = 0; VEB = 5 V IEBO max. 1.0 mA
Breakdown voltages
IC = 30 mA; IB = 0 VCEO(sus)* min. 40 60 80 100 V
IC = 1 mA; IE = 0 VCBO min. 40 60 80 100 V
IE = 1 mA; IC = 0 VEBO min. 5.0 V
Saturation voltage
IC = 3 A; IB = 375 mA VCEsat* max. 1.2 V
Base emitter on voltage
IC = 3 A; VCE = 4 V VBE(on)* max. 1.8 V
D.C. current gain
IC = 1 A; VCE = 4 V hFE* min. 25
IC = 3 A; VCE = 4 V hFE* min. 10
max. 50
Small-signal current gain
IC = 0.5A; VCE = 10V; f = 1 KHz |hfe | min. 20
Transition frequency
IC = 0.5A; VCE = 10V; f = 1 MHz fT (1) min. 3 MHz
* Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2%.
(1) fT = |hfe|• ftest
TIP31, TIP31A, TIP31B, TIP31C
TIP32, TIP32A, TIP32B, TIP32C
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