fiAMOSPEC NPN SILICON POWER TRANSISTOR ...2N3441 transistor is designed for use in general purpose NPN switching and linear amplifier application requiring high 2N3441 breakdown voitages. FEATURES * Driver for High Power Outputs * Series and Shunt Regulators * Solenoid and Relay Drivers 3 AMPERE * Power Switching Circuits SILICON POWER TRANSISTORS 140 VOLTS MAXIMUM RATINGS 25 WATTS Characteristic Symbol Rating Unit Collector-Base Voltage Veso 160 Vv Collector-Emitter Voitage Vero 140 Vv Emitter-Base Voltage Veso 7.0 Vv Collector Current - Continuous I; 3.0 A Base Current-Continuous Ip 2.0 A Total PowerDissipation@T,=25C Py 25 Ww Derate above 25C 0.142 wrc Operating and Storage Junction Ty. Tst C Temperature Range -65 to +200 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case Rejc 7.0 C PIN 1.BASE 2.EMITTER COLLECTOR(CASE) FIGURE -1 POWER DERATING MILLIMETERS 20 : DIM MIN MAX E 25 A | 3060 | 3252 = B 13.85 | 14.16 F 20 NS Cc 654 | 7.22 3 oN D 950 | 10.50 45 aw E | 17.26 | 18.46 8 PD] F 0.76 | 0.92 10 G 138 | 1.65 = H 24.16 | 24.78 os I 13.84 | 15.60 3 Ss J 3.32 | 392 a 0 K 486 5.34 0 2 50 75 100 125 150 17 200 To , TEMPERATURE(*C)2N3441 NPN a a ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage(1) VcEo (sus) V (1,= 50 mA, I_= 0) 140 Collector Cutoff Current \cEO mA (Veg= 140 V, p= 0 ) 50 Collector Cutoff Current loex mA (Vee= 140 V, Vagerom= 1-5 V ) .0 Emitter Cutoff Current leBo mA (Vep= 7.0 V, I= 0) 1.0 ON CHARACTERISTICS (1) DC Current Gain hFE (Ig= 0.5 A, Vop=4.0 V ) 25 100 (Ig= 2.7 A, Vog=4.0 V ) 5.0 Collector-Emitter Saturation Voltage Vee;sat) Vv (I= 2.7 A, Ip=0.9 A) 6.0 Base-Emitter On Voltage VBE(on) Vv | (1g= 2.7 A, Vop=4.0 V ) 6.7 DYNAMIC CHARACTERISTICS Smail-Signal Current Gain Nee (Ig= 0.54, Vog= 4.0 V, f = 1.0 KHz) 15 Small-Signat Current Gain | hee | (1g= 0.5 A, Vog= 4.0 V, f = 0.4 MHz) 5.0 (1) Pulse Test: Pulse width = 300 us , Duty Cycie = 2.0% ACTIVE REGION SAFE OPERATING AREA (SOA) EI tt EH There are two limitation on the power handling ability _ 8 manPused) iT ts 500ms 100ms SOms 2ms tms $00us 100us oon 7 of a transistor: average junction temperature and second f 4 toe x Af breakdown safe operating area curves indicate {c-Vce y NS ~ S 3 SK + 5 limits of the transistor that must be observed for reliable b i gmax (Continuous) wN SNON SM INT SA . G 2 <N SOS PSS operation i.e., the transistor must not be subjected to ae _ ORL . SL OY greater dissipation than curves indicate. co 1 The data of SOA curve is base on Typiq=200 C; Te is o JP) R 06 <I variable depending on conditions. second breakdown uw NINE pulse limits are valid for duty cycles to 10% provided 4 04 3 I - Bondng Wire Link Sao Tuypx$200C, At high case temperatures, thermal limita- 02[----Themmaly Limted T,=25C SS . tion will reduce the power that can be handled to values | eed 1 less than the limitations imposed by second breakdown. 0.4 2 5 7 10 20 40 60 100 140 200 Vee , COLLECTOR EMITTER VOLTAGE (VOLTS)