BC636 — PNP Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC636 Rev. C3 1
March 2009
BC636
PNP Epitaxial Silicon Transistor
Switching and Amplifier Applications
• Complement to BC635
Absolute Maximum Ratings Ta = 25°C unless other wise noted
Electrical Characteristics Ta = 25°C unless otherwise noted
Symbol Parameter Value Units
VCER Collector-Emitter Voltage at RBE=1KΩ -45 V
VCES Collector-Emitter Voltage -45 V
VCEO Collector-Emitter Voltage -45 V
VEBO Emitter-Base Voltage -5 V
ICCollector Current -1 A
ICP Peak Collector Current -1.5 A
IBBase Current -100 mA
PCCollector Power Dissipation 1 W
TJJunction Temperature 150 °C
TSTG Storage Temperature -65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BVCEO Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 -45 V
ICBO Collector Cut-off Current VCB= -30V, IE=0 -0.1 μA
IEBO Emitter Cut-off Current VEB= -5V, IC=0 -10 μA
hFE1
hFE2
hFE3
DC Current Gain VCE= -2V, IC= -5 mA
VCE= -2V, IC= -150mA
VCE= -2V, IC= -500mA
25
40
25 250
VCE (sat) Collector-Emitter Saturation Voltage IC= -500mA, IB= -50mA -0.5 V
VBE (on) Base-Emitter On Voltage VCE= -2V, IC= -500mA -1 V
fTCurrent Gain Bandwidth Product VCE= -5V, IC= -10mA,
f=50MHz 100 MHz
1. Emitter 2. Collector 3. Base
TO-92
1
BC636 — PNP Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC636 Rev. C3 2
Package Marking and Ordering Information
Device Marking Device Package
BC636 BC636 TO-92
BC636 BC636BU TO-92
BC636 BC636TA TO-92
BC636 BC636TAR TO-92
BC636 BC636TF TO-92
BC636 BC636TFR TO-92
BC636 BC636_J35Z TO-92
BC636 — PNP Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC636 Rev. C3 3
Ty pical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC Current Gain
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
Figure 5. Collector Output Capacitance
-0 -10 -20 -30 -40 -50
-0
-100
-200
-300
-400
-500
IB = - 0.2 mA
IB = - 0.4 mA
IB = - 0.6 mA
IB = - 0.8 mA
IB = - 1.0 mA
IB = - 1.2 mA
IB = - 1.4 mA
IB = - 1.6 mA
IB = - 1.8 mA
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-1 -10 -100 -1000
10
100
1000
VCE = - 2V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
-1 -10 -100 -1000
-0.01
-0.1
-1
-10
IC = 10 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2
-1
-10
-100
-1000
VCE = - 2V
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
-1 -10 -100
1
10
100
f=1MHz
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
BC636 — PNP Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC636 Rev. C3 4
Mechanical Dimensions
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1
.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.1
0
–0.0
5
0.38 +0.10
–0.05
TO-92
Dimensions in Millimeters
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
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The datasheet is for reference information only. Rev. I39
