BC636 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications * Complement to BC635 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a Symbol = 25C unless otherwise noted Parameter Value Units -45 V VCER Collector-Emitter Voltage at RBE=1K VCES Collector-Emitter Voltage -45 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1 A ICP Peak Collector Current -1.5 A IB Base Current -100 mA PC Collector Power Dissipation 1 W TJ Junction Temperature 150 C TSTG Storage Temperature -65 ~ 150 C Electrical Characteristics Symbol Ta = 25C unless otherwise noted Parameter Test Condition BVCEO Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 ICBO Collector Cut-off Current VCB= -30V, IE=0 IEBO Emitter Cut-off Current VEB= -5V, IC=0 hFE1 hFE2 hFE3 DC Current Gain VCE= -2V, IC= -5mA VCE= -2V, IC= -150mA VCE= -2V, IC= -500mA Min. Typ. Max. Units -0.1 A -10 A -45 V 25 40 25 250 VCE (sat) Collector-Emitter Saturation Voltage IC= -500mA, IB= -50mA -0.5 V VBE (on) Base-Emitter On Voltage VCE= -2V, IC= -500mA -1 V fT Current Gain Bandwidth Product VCE= -5V, IC= -10mA, f=50MHz (c) 2009 Fairchild Semiconductor Corporation BC636 Rev. C3 100 MHz www.fairchildsemi.com 1 BC636 -- PNP Epitaxial Silicon Transistor March 2009 BC636 -- PNP Epitaxial Silicon Transistor Package Marking and Ordering Information Device Marking Device Package BC636 BC636 TO-92 BC636 BC636BU TO-92 BC636 BC636TA TO-92 BC636 BC636TAR TO-92 BC636 BC636TF TO-92 BC636 BC636TFR TO-92 BC636 BC636_J35Z TO-92 (c) 2009 Fairchild Semiconductor Corporation BC636 Rev. C3 www.fairchildsemi.com 2 Figure 1. Static Characteristic Figure 2. DC Current Gain -500 1000 VCE = - 2V IB = - 1.6 mA -400 IB = - 1.4 mA hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT IB = - 1.8 mA IB = - 1.2 mA IB = - 1.0 mA -300 IB = - 0.8 mA IB = - 0.6 mA -200 IB = - 0.4 mA -100 IB = - 0.2 mA -0 100 10 -0 -10 -20 -30 -40 -50 -1 -100 -1000 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage -10 -1000 IC = 10 IB IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -10 VBE(sat) -1 -0.1 VCE(sat) -0.01 VCE = - 2V -100 -10 -1 -1 -10 -100 -1000 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 5. Collector Output Capacitance 100 Cob[pF], CAPACITANCE f=1MHz 10 1 -1 -10 -100 VCB[V], COLLECTOR-BASE VOLTAGE (c) 2009 Fairchild Semiconductor Corporation BC636 Rev. C3 www.fairchildsemi.com 3 BC636 -- PNP Epitaxial Silicon Transistor Typical Performance Characteristics BC636 -- PNP Epitaxial Silicon Transistor Mechanical Dimensions TO-92 +0.25 4.58 0.20 4.58 -0.15 14.47 0.40 0.46 0.10 +0.10 1.27TYP [1.27 0.20] 1.27TYP [1.27 0.20] 0.38 -0.05 (0.25) +0.10 0.38 -0.05 1.02 0.10 3.86MAX 3.60 0.20 (R2.29) Dimensions in Millimeters (c) 2009 Fairchild Semiconductor Corporation BC636 Rev. C3 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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