Data Sheet V1.1 1 2005-10-10
Smart Dual Lowside Power Switch
HITFET BTS3408G
Data Sheet V1.1
Features
• Logic Level Input
• Compatible to 3V micro controllers
• ESD protection
• Thermal shutdown with auto restart
• Overload protection
• Short circuit protection
• Over voltage protection
• Open load detection (during Off)
• Current limitation
• Direct parallel control of the inputs
• FREEZE functionality for multiplexing
• General fault flag
• Very low standby quiescent current
• Switching frequencies up to 50kHz
Application
• All kinds of resistive, inductive and capacitive loads in switching applications
• µC compatible power switch for 12 V, 24 V and 42 V applications
• Replaces electromechanical relays and discrete circuits
• Line, stepper motor, lamp and relay driver
General Description
The BTS3408G is a dual channel Low-Side Switch with D-MOS output stages for driving
resistive, capacitive and inductive loads. The design is based on Infineons Smart Power
Technology (SPT) which allows bipolar, CMOS and power D-MOS devices on the same
monolithic circuit.
The BTS3408G is protected by embedded protection functions and designed for
automotive and industrial applications. It is especially suited for driving stepper motors
and lines.
Type Ordering Code Package
HITFET BTS3408G Q67006-A9570-A002 P-DSO-8-3
HITFET BTS3408G
Data Sheet V1.1 2 2005-10-10
Figure 1 Block Diagram
Figure 2 Pin Configuration
Product Summary
Parameter Symbol Value Unit
Supply voltage VS4.5 - 60 V
Continuous drain source voltage VDS 60 V
On-state resistance RDS(ON) 550 mΩ
Current limitation ID(lim) 1A
Nominal output current (individual channel) ID(Nom) 0.55 A
Clamping energy EAS 800 mJ
BTS 3408
Logic
OUT2
OUTPUT Stage
Protection
Open Load @ OFF
Short Circuit
Over Temp
Normal Function
VS
Protection
and
Diagnosis
Control
Output
Control
Freeze
functio-
nality
Open Drain
Status
Feedback
FAULT
GND
OUT1
IN1
IN2
ENA
V
bb
LOAD
1
FAULT
IN1
IN2
ENA
V
S
OUT1
GND
OUT2
2
3
4
8
7
6
5
Data Sheet V1.1 3 2005-10-10
HITFET BTS3408G
Pin Definitions and Functions
Pin Symbol Function
1FAULT
General Fault Flag; see Table 2 for operation mode.
2IN1Input 1; input of channel 1; has an internal pull down; TTL/
CMOS compatible input.
3IN2Input 2; input of channel 2; has an internal pull down; TTL/
CMOS compatible input.
4ENAEnable/Freeze; has an internal pull down; device is enabled
when voltage is higher then 1.2 Volts; if the voltage is below 1.7
Volts the output is freezed, input signals will be ignored; if the
voltage is above 2 Volts input signals will be output ; see
Table 1 for detailed information.
5OUT2Output 2; output of D-MOS stage 2.
6GNDGround.
7OUT1Output 1; output of D-MOS stage 1.
8VSPower supply.
HITFET BTS3408G
Data Sheet V1.1 4 2005-10-10
Circuit Description
Logic Supply
The logic is supplied with 4.5 up to 60 Volt by the VS pin. If VS falls below max. 4.5 Volts
the logic is shut down and the output stages are switched off.
Direct Inputs
ENA
The ENA/FREEZE input can be used to enable and/or to freeze the output control of the
IC or to cut off the complete IC.
By pulling the ENA input to low, i.e. applying a Voltage VENAL , the IC is in disable mode.
The power stages are switched off and the current consumption is reduced to IS(stby).
By applying a Voltage VENAFZ , the IC is in FREEZE mode. The output signals will remain
in their former state. All input signals will be ignored.
By pulling the input to high, the IC is in Enable mode. All input signals are output.
The ENA - pin has an internal pull-down.
IN1 / IN2
Each output is independently controlled via the respective input pin. The input pins are
high active. If the common enable pin is high, the individual input signals are output. The
input pins have an internal pull-down.
Table 1 Functional Table
VENA Mode IN1 IN2 IN1(-1) IN2(-1) OUT1 OUT2 Comment
≤0.8V Disable X 1)
1) X = not relevant
X 1) X 1) X 1) L L all outputs OFF
1.2 .. 1.7V Freeze X 1) X 1) L L L L former output state
1.2 .. 1.7V Freeze X 1) X 1) L H L H former output state
1.2 .. 1.7V Freeze X 1) X 1) H L H L former output state
1.2 .. 1.7V Freeze X 1) X 1) H H H H former output state
≥2.0V Enable L L X 1) X 1) L L input is output
≥2.0V Enable L H X 1) X 1) L H input is output
≥2.0V Enable H L X 1) X 1) H L input is output
≥2.0V Enable H H X 1) X 1) H H input is output
Data Sheet V1.1 5 2005-10-10
HITFET BTS3408G
Power stages
Each output is protected by embedded protection functions. In the event of an overload
or short to supply, the current is internally limited. The current limit is set to ID(lim). If this
operation leads to an overtemperature condition, a second protection level (about 165
°C) will turn the effected output into a PWM-mode (selective thermal shutdown with
restart) to prevent critical chip temperatures. The temperature hysteresis is typically 10K.
Zener clamping is implemented to limit voltages at the power transistors when inductive
loads are switched off.
Diagnostic
The general FAULT pin is an open drain output. The FAULT pin is low active. It signals
fault conditions of any of the two output stages. By doing so, single and/or dual fault
conditions can be monitored. Single fault conditions can be assigned.
Fault Distinction
Open load / short to ground is recognized during OFF-state. Overtemperature as a result
of an overload or short to battery can only arise during ON-state. If there is only one fault
at a time, it is possible to distinguish which channel is affected with which fault.
.
Table 2 Diagnostic Table
Operating Condition ENA INXOUTXFAULT
Standby L X 1)
1) X = not relevant
OFF H
Normal function H H ON H
Over temperature H H OFF 2)
2) selective thermal shutdown for each channel at overtemperature
L
Open load / short to ground H L OFF L
HITFET BTS3408G
Data Sheet V1.1 6 2005-10-10
Absolute Maximum Ratings 1)
Tj = -40°C to 150°C , unless otherwise specified
Parameter Symbol Values Unit Remarks
Supply Voltage VS+4.5 .. +60 V –
Drain source voltage (OUT1, OUT2) VDS -0.3 .. +60 V –
Input voltage (IN1, IN2, ENA) VIN -0.3 … +7 V –
Continuous input current VIN>7V IIN 1mA–
FAULT output voltage VFault -0.3 … +7 V –
Operating temperature range
Storage temperature range
Tj
Tstg
-40 … +150
-55 … +150
°C
°C
–
Power dissipation (DC) 2) Ptot 0.88 W –
Nominal load current 2)
one channel active
both channel active
ID(Nom)
0.55
0.45
AVDS≤0.5V,
Tj≤150°C,
TA=85°C,
VIN=5V
Unclamped single pulse inductive energy
one channel active
EAS 800 mJ ID=0.7A,
Tj(start)=25°C
Electrostatic discharge voltage (Human
Body Model)
according to MIL STD 883D, method
3015.7 and EOS/ESD assn. standard
S5.1 - 1993
VESD 2000 V –
DIN humidity category, DIN 40 040 – E – –
IEC climatic category, DIN IEC 68-1 – 40/150/56 – –
Thermal Resistance
Junction soldering point RthJS ≤ 10 K/W –
Junction - ambient @ min. footprint
Junction - ambient @ 6cm² cooling area 2)
RthJA ≤ 185
≤ 142
K/W –
1) Stresses above those listed here may cause permanent damage to the device. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2) Device on epoxy pcb 40 mm × 40 mm × 1.5 mm with 6 cm2 copper area for pin 4 connection.
Data Sheet V1.1 7 2005-10-10
HITFET BTS3408G
Electrical Characteristics
VS = 4.5 to 18V; Tj = -40 to 150°C; unless otherwise specified
Parameter Sym-
bol
Limit Values Unit Test Conditions
min. typ. max.
Power supply
Supply voltage VS4.5 – 60 V –
Supply current in enable mode IS(ON) –1.54mAENA=High,
OUT1=OUT2=On
Supply current in standby mode 1) IS(stby) ––16µAENA=Low
Power outputs
Drain source clamp voltage VDS(AZ) 60 – 75 V ID = 1 mA
Output leakage current 2) IDSS –15µAENA=Low,
IN=Low,
VDS = 60 V
Output pull down current IPD(OL) 50 100 200 µA ENA=High,
IN=Low,
VDS = 42 V
On-state resistance
Tj = 25 °C
Tj = 150 °C
RDS(on)
–
–
480
800
550
1000
mΩID = 0.2 A,
VS = 5 V
Current limit ID(lim) 11.52A–
Turn-on time IN=High to 90% ID:ton –28µsRL=2kΩ,
VBB=12V,VS=5V
Turn-off time IN=Low to 10% ID:ton –28µsRL=2kΩ,
VBB=12V,VS=5V
Digital inputs (IN1, IN2, ENA)
Input ’Low’ voltage
IN1, IN2:
ENA:
VINL
VENAL
-0.3
-0.3
–
–
0.8
0.8
V–
ENA voltage for ’FREEZE’
functionality
VENAFZ 1.2 – 1.7 V –
HITFET BTS3408G
Data Sheet V1.1 8 2005-10-10
Input ’High’ voltage
IN1, IN2:
ENA:
VINH
VENAH
2.0
2.0
–
–
–
–
V–
Input voltage hysteresis VINhys – 300 – mV –
Input pull down current
IN1, IN2:
ENA:
IINPD
IENAPD
20
20
50
50
100
100
µA–
Digital Output (FAULT)
Output ’Low’ voltage VFLTL ––0.4VIFLTL=1.6mA,
Diagnostic Functions
Open load / short to ground
detection voltage
VDS(OL) 0.5*VS0.7*VS0.9*VSV–
Fault filter time for open load tfilter(OL) 30 100 200 µsVS=5V
Protection Functions 3)
Thermal overload trip
temperature
Tjt 150 165 180 °C–
Thermal hysteresis
∆
Tjt –10–Κ–
Unclamped single pulse inductive
energy
one channel active,Tj(start)=25°C
both channel active,Tj(start)=25°C
one channel active,Tj(start)=150°C
both channel active,Tj(start)=150°C
EAS
800
550
240
240
mJ ID=0.7 A
1) See also diagram 4 on page 14.
2) See also diagram 5 on page 14.
3) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
Electrical Characteristics (cont’d)
VS = 4.5 to 18V; Tj = -40 to 150°C; unless otherwise specified
Parameter Sym-
bol
Limit Values Unit Test Conditions
min. typ. max.
Data Sheet V1.1 9 2005-10-10
HITFET BTS3408G
EMC-Characteristics
The following EMC-Characteristics outline the behavior of typical devices. They are not
part of any production test.
Table 3 Test Conditions
Parameter Symbol Value Unit Remark
Temperature TA23 ±5 °C –
Supply Voltage VBB 13.5 V –
Input Voltage (ENA, IN1, IN2) VINx 5V–
Load RL1 , RL2 27 Ωohmic
Operation mode PWM
DC
–
–
–
–
fINx=100Hz, D=0.5
ON / OFF
DUT specific all tests with ENA=HIGH
Fast electrical transients
acc. to ISO 7637
Test1)
Pulse
1) The test pulses are applied at VBB
Max.
Test
Level
Test Result
Pulse Cycle Time
and Generator
Impedance
VS and OUTx
stressed OUTx stressed
ON OFF ON OFF
1 -200V E(-120V) E(-120V) C C 500ms ; 10Ω
2 +200V E(+120V E(+120V C C 500ms ; 10Ω
3a-200VCCCC 100ms ; 10Ω
3b+200VCCCC 100ms ; 10Ω
4-7VCCCC 0.01Ω
5 175V E(50V) E(65V) E(70V) E(75V) 400ms ; 2Ω
Definition of functional status
Class Content
C All functions of the device are performed as designed after exposure to
disturbance.
E One or more function of a device does not perform as designed after
exposure and can not be returned to proper operation without repairing
or replacing the device. The value after the character shows the limit.
HITFET BTS3408G
Data Sheet V1.1 10 2005-10-10
Figure 3 Test circuit for ISO pulse
3408
OUT2
VS
FAULT
GND
OUT1
IN1
IN2
ENA
V
BB
R
L1
R
L2
13.5V
stress also for V
S
PULSE
HITFET BTS3408G
Data Sheet V1.1 11 2005-10-10
Conducted Emissions
Acc. IEC 61967-4 (1Ω/150Ω method)
Typ. OUTx Emissions at PWM-mode
with 150Ω-matching network
Figure 4 Test circuit for conducted
emission 1)
Conducted Susceptibility
Acc. I47A/658/CD IEC 62132-4 (Direct
Power Injection)
Direct Power Injection: Forward Power
CW
Failure Criteria: Amplitude or frequency
variation max. 10% at OUT
Typ. OUTx Susceptibility at DC-ON/OFF
and at PWM
Figure 5 Test circuit for conducted
susceptibility 2)
1) For defined decoupling and high reproducibility a
defined choke (5µH at 1 MHz) is inserted between
Vbb and Out-Pin.
-20
-10
0
10
20
30
40
50
60
70
80
90
100
0,1 1 10 100 1000
f / MHz
dBµV
Noise
OUT1
OUT2
150ohm Class1
150ohm Class6
150Ω / 8-H
150Ω / 13-N
3408
OUT2
VS
FAULT
GND
OUT1
IN1
IN2
ENA
V
BB
R
L1
R
L2
5V
150
Ω
-Network
150
Ω
-Network
2) Broadband Artificial Network (short BAN) consists
of the same choke (5µH at 1 MHz) and the same
150ohm-matching network as for emission
measurement for defined decoupling and high
reproducibility.
0
5
10
15
20
25
30
35
40
1 10 100 1000
f / MHz
dBm
Limit
OUT2, ON
OUT2, OFF
OUT2, PWM
3408
OUT2
VS
FAULT
GND
OUT1
IN1
IN2
ENA
V
BB
R
L1
R
L2
HF
B
A
N
5V
B
A
N
HF
HITFET BTS3408G
Data Sheet V1.1 12 2002-10-10
Terms
Figure 6 Input circuit
(ESD protection)
ESD zener diodes are not designed for DC
current.
Figure 7 Inductive and over
voltage output clamp
Figure 8 Application Circuit
I
IN1
V
FLT
I
S
OUT2
VS
FAULT
GND
OUT1
IN1
IN2
ENA
V
IN1
V
S
V
IN2
V
ENA
V
DS2
V
DS1
I
D1
I
D2
I
IN2
I
ENA
V
BB
I
FLT
Source
Drain
V
DS
I
D
V
AZ
Power
DMOS
LOAD
3408
OUT2
VS
FAULT
GND
OUT1
IN1
IN2
ENA
V
BB
uC
V
cc
GND
INT
Px.1
Px.2
Py.1 line
HITFET BTS3408G
Data Sheet V1.1 13 2005-10-10
Timing diagrams
Figure 9 Switching a resistive load
Figure 10 Switching an inductive
load
Figure 11 Short circuit
Characteristics
1. Max. allowable Power Dissipation
Ptot = f(Tamb)
2. On-state Resistance RON = f(Tj);
ID = 0.2 A; VS = 5 V
t
V
DSx
t
I
Dx
t
on
t
off
IN
x
ENA
0.9*I
D
0.1*I
D
t
V
DSx
IN
x
t
I
Dx
V
BB
V
DS(AZ)
ENA
t
ϑ
jx
I
Dx
IN
x
ENA
t
FAULT
thermal hysteresis
0
0,2
0,4
0,6
0,8
1
-50 -25 0 25 50 75 100 125 150
Ptot
W
Tamb
°C
min. footprint
6cm²
0
100
200
300
400
500
600
700
800
900
1000
-50 -25 0 25 50 75 100 125 150
RON
mΩ
Tj
°C
max.
typ.
HITFET BTS3408G
Data Sheet V1.1 14 2005-10-10
3. Typ. Short Circuit Current
ID(lim) = f(Tj)
4. Typ. Supply current in Standby mode
IS(stby) = f(Tj);VS = 5 V
5. Typ. Output leakage current
IDSS = f(Tj);VS = 18 V; VDS = 60 V
0
0,5
1
1,5
2
-50 -25 0 25 50 75 100 125 150
ID(lim)
A
Tj
°C
typ.
0
2
4
6
8
10
-50 -25 0 25 50 75 100 125 150
IS(stby)
µ
A
Tj
°C
typ.
0
0,4
0,8
1,2
1,6
2
-50 -25 0 25 50 75 100 125 150
IDSS
µ
A
Tj
°C
typ.
Data Sheet V1.1 15 2005-10-10
HITFET BTS3408G
Package Outlines
P-DSO-8-3
(Small Outline Transistor)
GPS05560
Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book “Package Information”
Dimensions in mm
SMD = Surface Mounted Device
HITFET BTS3408G
Data Sheet V1.1 16 2005-10-10
Revision History : 1.1
Previous version : 1.0
For questions on technology, delivery and prices please contact the Infineon
Technologies Offices in Germany or the Infineon Technologies Companies and
Representatives worldwide. see our webpage at
http://www.infineon.com
HITFET®, SIPMOS® are registered trademarks of Infineon Technologies AG.
Page Subjects (major changes since last revision)
1corrected order number to -A002
Data Sheet V1.1 17 2005-10-10
HITFET BTS3408G
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 76,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be
considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of
non-infringement, regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Tech-nologies Office in Germany or our Infineon
Technologies Representatives worldwide (see address list).
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Due to technical requirements components may contain dangerous substances. For
information on the types in question please contact your nearest Infineon Technologies
Office.
Infineon Technologies Components may only be used in life-support devices or systems
with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support device
or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are in-tended to be implanted in the human body, or to support and/
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