TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/301
T4-LDS-0010 Rev. 3 (101342) Page 1 of 4
DEVICES LEVELS
2N918 2N918UB JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATI NG S (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Value Unit
Collector-Emitter Voltage VCEO 15 Vdc
Collector-Base Voltage VCBO 30 Vdc
Emitter-Base Voltage VEBO 3.0 Vdc
Collector Current IC 50 mAdc
Total Power Dissipation @ TA = +25°C (1) P
T 200 mW
Operating & Storage Junction Temperature Range Top & Tstg -65 to +200 °C
Note: 1) Derate linearly 1.14mW/°C above TA > 25°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 3mAdc V(BR)CEO 15 Vdc
Collector-Base Cutoff Current
VCB = 30Vdc
VCB = 25Vdc
VCB = 25Vdc; TA = +150°C
ICBO
1.0
10
1.0
µAdc
ηAdc
µAdc
Emitter-Base Cutoff Current
VEB = 3.0Vdc
VEB = 2.5Vdc
IEBO
10
10
µAdc
ηAdc
Forward-Current Transfer Ratio
IC = 0.5mAdc, VCE = 10Vdc
IC = 3.0mAdc, VCE = 1.0Vdc
IC = 10mAdc, VCE = 10Vdc
IC = 3.0mAdc, VCE = 1.0Vdc; TA = -55°C
hFE
10
20
20
10
200
Collector-Emitter Saturation Voltage
IC = 10mAdc, IB = 1.0mAdc VCE(sat) 0.4 Vdc
Base-Emitter Voltage
IC = 10mAdc, IB = 1.0mAdc VBE(sat) 1.0 Vdc
TO-72
2N918
3 PIN
2N918UB
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
T4-LDS-0010 Rev. 3 (101342) Page 2 of 4
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Magnitude of Small-Signal Short-Circuit - Forward Current Transfer Ratio
IC = 4mAdc, VCE = 10Vdc, f = 100MHz |hfe| 6.0 18
Output Capacitance
VCB = 0Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz
VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz
Cobo1
Cobo2 3.0
1.7 pF
Input Capacitance
VEB = 0.5Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz Cibo
2.0 pF
Noise Figure (1)
VCE = 6V, IC = 1.0mA, f = 60MHz
gs = 2.5mmho NF
6.0 dB
Small-Signal Power Gain (1)
VCB = 12V, IC = 6.0mA, f = 200MHz Gpe 15
dB
Collector-Base Time Constant (1)
VCB = 10V, IE = -4.0mA, f = 79.8MHz Rb’CC
25 ps
Oscillator Power Output (1)
VCB = 1.5V, IC = 8.0mA, f ≥ 500MHz Po 30
mW
Collector Efficiency
VCB = 15V, IC = 8.0mA, f > 500MHz n 25
%
NOTES:
(1) For more detail see MIL-PRF-19500/301
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
T4-LDS-0010 Rev. 3 (101342) Page 3 of 4
PACKAGE DIMENSIONS
NOTES:
1. Dimension are in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TH shall be held for a minimum length of .011 inch (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.025 -0.00 mm) below seating plane shall be within .007 inch
(0.18mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is
uncontrolled in L1 and beyond LL minimum.
8. All four leads.
9. Dimension r (radius) applies to both inside corners of tab.
10. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
11. Lead 1 = emitter, lead 2 = base, lead 3 = collector, lead 4 = case (electrically connected).
FIGURE 1. Physical dimensions for 2N918 (TO-72).
Symbol
Dimensions
Inches Millimeters Note
Min Max Min Max
CD .178 .195 4.52 4.95 5
CH .170 .210 4.32 5.33
HD .209 .230 5.31 5.84 5
LC .100 TP 2.54 TP 7,8
LD .016 .021 .406 .533 7,8
LL .500 .750 12.70 19.05 7,8
LU .016 .019 .406 .483
L1 .050 1 .27
L2 .250 6.35
P .100 2.54
Q .040 1.02 5
TL .028 .048 .71 1.22
TW .036 .046 .91 1.17
r .007 .18
α 45° TP
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
T4-LDS-0010 Rev. 3 (101342) Page 4 of 4
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Hatched areas on package denote metallized areas.
4. Lid material: Kovar.
5. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.
6. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 2. Physical dimensions for 2N918UB, surface mount.
Symbol
Dimensions Dimensions
Inches Millimeters Note Symbol Inches Millimeters Note
Min Max Min Max Min Max Min Max
BH .046 .056 1.17 1.42 LS1 .036 .040 0.91 1.02
BL .115 .128 2.92 3.25 LS2 .071 .079 1.80 2.01
BW .085 .108 2.16 2.74 LW .016 .024 0.41 0.61
CL .128 3.25 r .008 .203
CW .108 2.74 r1 .012 .305
LL1 .022 .038 0.56 0.97 r2 .022 .559
LL2 .017 .035 0.4. 0.89
