NTR5105P Power MOSFET -60 V, -211 mA, Single P-Channel SOT-23 Package Features * Trench Technology * These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS Applications * Small Signal Load Switch * Analog Switch RDS(on) MAX 5 W @ -10 V -60 V Parameter Drain-to-Source Voltage Gate-to-Source Voltage Power Dissipation (Note 1) P-Channel Symbol Value Unit VDSS -60 V VGS 20 V ID -196 mA Steady State TA = 25C TA = 85C -141 t5s TA = 25C -211 TA = 85C -152 Steady State TA = 25C PD t5s Pulsed Drain Current -211 mA 6 W @ -4.5 V MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Continuous Drain Current (Note 1) ID MAX mW 347 3 403 -784 mA TJ, Tstg -55 to 150 C Source Current (Body Diode) (Note 2) IS -347 mA Lead Temperature for Soldering Purposes (1/8" from case for 10 s) TL 260 C Operating Junction and Storage Temperature G S IDM tp = 10 ms D Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. MARKING DIAGRAM/ PIN ASSIGNMENT Drain 3 1 2 T05 MG G SOT-23 CASE 318 STYLE 21 T05 M G 1 Gate 2 Source = Device Code = Date Code* = Pb-Free Package (Note: Microdot may be in either location) THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction-to-Ambient - Steady State (Note 1) RqJA 360 C/W Junction-to-Ambient - t 5 s (Note 1) RqJA 310 C/W 1. Surface-mounted on FR4 board using 1 in. sq. pad size (Cu area - 1.127 in. sq. [2 oz.] including traces). 2. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz. Cu pad. *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping NTR5105PT1G SOT-23 (Pb-Free) 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2013 October, 2016 - Rev. 2 1 Publication Order Number: NTR5105P/D NTR5105P ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter Symbol Test Conditions Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = -250 mA -60 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Reference to 25C, ID = -250 mA Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate-to-Source Leakage Current IDSS VGS = 0 V, VDS = -60 V V 6.5 mV/C TJ = 25C -1.0 TJ = 125C -10 IGSS VDS = 0 V, VGS = "20 V VGS(TH) VGS = VDS, ID = -250 mA mA "100 nA -3.0 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain-to-Source On-Resistance RDS(on) Forward Transconductance gFS -1.0 4.2 mV/C VGS = -10 V, ID = -100 mA 1.6 5.0 VGS = -4.5 V, ID = -100 mA 2.2 6.0 VDS = -5.0 V, ID = -100 mA 227 mS 30.3 pF W CHARGES, CAPACITANCES & GATE RESISTANCE Ciss Input Capacitance Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate-to-Source Charge QGS Gate-to-Drain Charge QGD VGS = 0 V, f = 1.0 MHz, VDS = -25 V 4.7 3.2 nC 1.0 VGS = -5 V, VDS = -25 V, ID = -100 mA 0.2 0.4 0.3 SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) ns 5.8 VGS = -5 V, VDD = -48 V, ID = -100 mA, RG = 1 W tf 4.0 8.8 12.8 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = -100 mA TJ = 25C 0.78 TJ = 125C 0.59 1.0 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTR5105P TYPICAL CHARACTERISTICS TJ = 25C 0.7 -4.0 V 0.6 0.5 -3.5 V 0.4 0.3 -3.0 V 0.2 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.1 0 1 2 3 4 TJ = 25C 0.7 0.6 0.5 0.4 VDS = -10 V 0.3 1 4 5 6 7 Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics ID = -100 mA 5 4 3 2 1 3 4 5 6 7 8 9 10 -VGS, GATE-TO-SOURCE VOLTAGE (V) 8 5 TJ = 25C 4 VGS = -4.5 V 3 2 1 VGS = -10 V 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -ID, DRAIN CURRENT (A) Figure 3. On-Resistance vs. Gate-to-Source Voltage Figure 4. On-Resistance vs. Drain Current and Gate Voltage 2.0 1000 VGS = -10 V ID = -100 mA -IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN-TO- SOURCE RESISTANCE (W) 3 -VGS, GATE-TO-SOURCE VOLTAGE (V) 6 1.5 VGS = -4.5 V 1.0 0.5 -50 2 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) TJ = 25C 2 0.8 0.1 5 7 0 TJ = 125C 0.2 -2.5 V 0 TJ = -55C 0.9 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) -ID, DRAIN CURRENT (A) 0.8 1.0 -4.5 V VGS = -5 V to -10 V -ID, DRAIN CURRENT (A) 1.0 0.9 TJ = 150C 100 TJ = 125C 10 1 TJ = 85C -25 0 25 50 75 100 125 150 0.1 10 20 30 40 50 TJ, JUNCTION TEMPERATURE (C) -VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage www.onsemi.com 3 60 NTR5105P TYPICAL CHARACTERISTICS -VGS, GATE-TO-SOURCE VOLTAGE (V) 40 C, CAPACITANCE (pF) CISS 30 20 COSS 10 0 VGS = 0 V TJ = 25C f = 1 MHz CRSS 0 10 20 30 40 50 60 QT 9 8 7 6 5 4 QGS 3 VDS = -25 V ID = -100 mA TJ = 25C 2 1 0 0 0.2 0.4 0.6 1.0 0.8 1.2 1.4 1.6 1.8 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 10 VGS -30 V Single Pulse TC = 25C -ID, DRAIN CURRENT (A) VGS = 0 V 1 TJ = 85C TJ = 25C 0.1 QGD -VDS, DRAIN-TO-SOURCE VOLTAGE (V) 10 -IS, SOURCE CURRENT (A) 10 0.6 0.8 0.7 0.9 1.0 1.1 1 0.1 10 ms 0.01 0.001 1.2 100 ms 1 ms RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 dc 100 1000 -VSD, SOURCE-TO-DRAIN VOLTAGE (V) -VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current Figure 10. Maximum Rated Forward Biased Safe Operating Area 1000 RqJA(t) (C/W) 50% Duty Cycle 100 20% 10% 5% 10 2% 1% 1 Single Pulse 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) Figure 11. Thermal Response www.onsemi.com 4 1 10 100 1000 NTR5105P PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AR D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0_ MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 --- 10 _ MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0_ INCHES NOM MAX 0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 0.021 0.027 0.094 0.104 --- 10 _ STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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