Transistors A F G Silicon npn power transistors Photographs actual size Prot max. @ Vceo(sus) Veso Veso le Tease = 25C T; VE (sat) @ lo & Ip hre @ lo & Vee fr Out- Type min. max. max. max. max. max. min. max. typ. line V V V A W C V A A A Vv MHz DT1311 40 60 20 60 1:5 DT1312. 60 100 > A. 20 60 a. 15 DT1321 40 60 12 1:5 5(1) 200 0-75 0-2 0:02 40 120 02 4 2-5 A DT1322 60 100 40 120 25 *DT3312 55 90 4 = *DT3313 140 160 7 3 25 175 1:0 0:5 0:05 25 100 O05 4 0O-8(2) F *DT4612 60 100 7 15 100 175 1:1 4 0:4 20 70 4 4 0-8(2) G *DT4613 140 160 10 1-0 3 0:3 20 70 3 4 G *DT4643 140 160 7 16 100 175 1-4 8 0:8 15 60 8 4 G *DT4652 60 100 7 20 100 175 1:4 10 1:0 15 60 10 4 G *DT4660 40 50 5 30 100 175 2 15 1:5 15 60 15 4 G 2N1479 40 60 20 60 2N1480 55 100 20 60 4g. 2N1481 40 60 12 1:5 5(1) 200 7(3) 0:2 0:02 35 100 02 4 =1:5 A 2N1482 55 100 35 100 *2N3054 55 90 7 4 25 200 1:0 0-5 0-05 25 100 O05 4 O-8(2) F *2N3055 60 100 7 15 115 200 1:1 4 0-4 20 70 4 4 08(2) G *2N3441 140 160 7 3 25 200 1 05 005 25 100 O05 4 O-8(2) F *2N3442 140 160 7 10 117 200 1 3 0:3 20 70 3 4 G *2N3771 40 50 5 30 2 15 1:5 15 60 15 4 *2N3772 60 100 7 20 150 200 1:4 10 1 15 60 10 4 G *2N3773 140 160 7 16 1-4 8 0:8 15 60 8 4 *2N4347 5 100 1:0 2 0:2 15 60 2 4 ~onazag 120, 140007 ag 120 200 40 #5 O58 15 6 5 4 G *2N6253 45 55 5 15 115 200 4 15 5 20 70 3 4 G *2N6257 40 50 5 20 150 200 1:5 8 0:3 15 75 8 4 G *2N6260 40 50 5 3 29 200 1:5 15 015 20 100 15 4 F *2N6263 120 140 7 3 20 200 1:2 05 0-05 20 100 05 4 O-8(2) F *New devices. (1) Tease = 100C. (2) fr min. (3) Tce(saty) Max. ohms.