2KBP08M - VISHAY - Datasheet.Technology

2KBPxxM-E4, 3N25x-E4

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Revision: 05-Aug-15 1Document Number: 88532

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Glass Passivated Single-Phase Bridge Rectifier

FEATURES

• UL recognition file number E54214

• Ideal for printed circuit board

• High surge current capability

• High case dielectric strength

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

General purpose use in AC/DC bridge full wave rectification

for switching power supply, home appliances, office

equipment, and telecommunication applications.

MECHANICAL DATA

Case: KBPM

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E4 - RoHS-compliant, commercial grade

Terminals: Silver plated leads, solderable per

J-STD-002 and JESD22-B102

Polarity: As marked on body

PRIMARY CHARACTERISTICS

Package KBPM

IF(AV) 2.0 A

VRRM 50 V to 1000 V

IFSM 60 A

IR5 μA

VF at IF = 3.14 A 1.1 V

TJ max. 165 °C

Diode variations In-line

+~~−

Case Style KBPM

−

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL 2KBP005M 2KBP01M 2KBP02M 2KBP04M 2KBP06M 2KBP08M 2KBP10M UNIT

3N253 3N254 3N255 3N256 3N257 3N258 3N259

Maximum repetitive peak reverse

voltage VRRM 50 100 200 400 600 800 1000 V

Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V

Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V

Maximum average forward output

rectified current at TA = 55 °C IF(AV) 2.0 A

Peak forward surge current single half

sine-wave superimposed on rated

load

IFSM 60 A

Rating for fusing (t < 8.3 ms) I2t15A

Operating junction and storage

temperature range TJ, TSTG -55 to +165 °C

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL TEST

CONDITIONS

2KBP005M 2KBP01M 2KBP02M 2KBP04M 2KBP06M 2KBP08M 2KBP10M

UNIT

3N253 3N254 3N255 3N256 3N257 3N258 3N259

Maximum instantaneous

forward voltage drop per

diode

VF3.14 A 1.1 V

Maximum DC reverse

current at rated DC

blocking voltage per diode

TA = 25 °C 5.0

μA

TA = 125 °C 500

Typical junction

capacitance per diode TJ4.0 V, 

1 MHz 25 pF

2KBPxxM-E4, 3N25x-E4

www.vishay.com Vishay General Semiconductor

Revision: 05-Aug-15 2Document Number: 88532

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

(1) Thermal resistance from junction to ambient and from junction to lead mounted on PCB with, 0.47" x 0.47" (12 mm x 12 mm) copper pads

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

Fig. 1 - Derating Curve Output Rectified Current

Fig. 2 - Maximum Non-Repetitive Peak Forward SurgeCurrent

Per Diode

Fig. 3 - Typical Forward Characteristics Per Diode

Fig. 4 - Typical Reverse Leakage Characteristics Per Diode

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

2KBP005M 2KBP01M 2KBP02M 2KBP04M 2KBP06M 2KBP08M 2KBP10M

UNIT

3N253 3N254 3N255 3N256 3N257 3N258 3N259

Typical thermal resistance RJA (1) 30 °C/W

RJL (1) 11

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE

2KBP06M-E4/51 1.895 51 600 Anti-static PVC tray

3N257-E4/51 1.895 51 600 Anti-static PVC tray

20 40 60 80 100 120 140 160170

0.5

1.0

1.5

2.0

Capacitive Load

5.0

I(pk)

I(AV)

(Per Leg)

PCB Mounted

with 0.47 x 0.47"

(12 x 12 mm)

Copper Pads

60 Hz Resistive or

Inductive Load

Ambient Temperature (°C)

Average Forward Output Current (A)

110 100

= 150 °C

Single Sine-Wave

Number of Cycles at 60 Hz

Peak Forward Surge Current (A)

1.0 Cycle

00.2 0.4 0.6 0.8 1.0 1.2 1.4

0.01

0.1

100

= 25 °C

Pulse Width = 300 µs

1 % Duty Cycle

Instantaneous Forward Voltage (V)

Instantaneous Forward Current (A)

020 40 60 80 100

0.01

0.1

100

Percent of Rated Peak Reverse Voltage (%)

Instantaneous Reverse Current (µA)

= 100 °C

= 125 °C

= 25 °C

2KBPxxM-E4, 3N25x-E4

www.vishay.com Vishay General Semiconductor

Revision: 05-Aug-15 3Document Number: 88532

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 5 - Typical Junction Capacitance Per Diode

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

0.1 110 100

100

Reverse Voltage (V)

Junction Capacitance (pF)

= 25 °C

f = 1.0 MHz

sig

= 50 mVp-p

Polarity shown on front side of case: positive lead by beveled corner

0.125 x 45°

(3.2)

0.600 (15.24)

0.560 (14.22)

0.034 (0.86)

0.028 (0.76)

0.105 (2.67)

0.085 (2.16)

0.160 (4.1)

0.140 (3.6)

0.060

(1.52)

0.460 (11.68)

0.50 (12.7) MIN.

0.420 (10.67)

0.500 (12.70)

0.460 (11.68)

0.60

(15.2)

MIN.

DIA.

0.200 (5.08)

0.180 (4.57)

Case Style KBPM

Legal Disclaimer Notice

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Revision: 08-Feb-17 1Document Number: 91000

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

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