P4SMAJ5.0 ... P4SMAJ170CA
P4SMAJ5.0 ... P4SMAJ170CA
SMD Transient Voltage Suppressor Diodes
SMD Spannungs-Begrenzer-Dioden
PPPM = 400W
PM(AV) = 1.0 W
Tjmax = 150°C
VWM = 5.0 ... 170 V
VBR = 6.8 ... 200 V
Version 2016-05-30
~ SMA / ~ DO-214AC
Dimensions - Maße [mm]
Type Code = VWM. Cathode mark
only at unidirectional types
Typ-Code = VWM. Kathoden-Markierung
nur bei unidirektionalen Typen
Typical Applications
Over-voltage protection
ESD protection
Free-wheeling diodes
Commercial grade 1)
Typische Anwendungen
Schutz gegen Überspannung
ESD-Schutz
Freilauf-Dioden
Standardausführung 1)
Features
Uni- and Bidirectional versions
Peak pulse power of 400 W
(10/1000 µs waveform)
Very fast response time
Further available: P4SMA220...550CA
having VBR = 220 ... 550 V
Compliant to RoHS, REACH,
Conflict Minerals 1)
Besonderheiten
Uni- und Bidirektionale Versionen
400 W Impuls-Verlustleistung
(10/1000 µs Strom-Impuls)
Sehr schnelle Ansprechzeit
Auch erhältlich: P4SMA220...550CA
mit VBR = 220 ... 550V
Konform zu RoHS, REACH,
Konfliktmineralien 1)
Mechanical Data 1) Mechanische Daten 1)
Taped and reeled 7500 / 13“ Gegurtet auf Rolle
Weight approx. 0.07 g Gewicht ca.
Case material UL 94V-0 Gehäusematerial
Solder & assembly conditions 260°C/10s Löt- und Einbaubedingungen
MSL = 1
For bidirectional types (suffix “C” or “CA”), electrical characteristics apply in both directions.
Für bidirektionale Dioden (mit Suffix “C” oder “CA”) gelten die elektrischen Werte in beiden Richtungen.
Maximum ratings 2) Grenzwerte 2)
Peak pulse power dissipation (10/1000 µs waveform)
Impuls-Verlustleistung (Strom-Impuls 10/1000 µs)
TA = 25°C PPPM 400 W 3)
Steady state power dissipation – Verlustleistung im Dauerbetrieb TT = 75°C PM(AV) 1 W
Peak forward surge current (half sine) – Stoßstrom (Sinushalbw.) 60 Hz TA = 25°C IFSM 40 A 4)
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+150°C
-50...+150°C
Characteristics Kennwerte
Max. instantaneous forward
voltageAugenblickswert der Durchlass-Spannung
IF = 25 A VBR ≤ 200 V VF< 3.5 V 4)
Thermal resistance junction to ambien –Wärmewiderstand Sperrschicht – Umgebung
Thermal resistance junction to terminal – Wärmewiderstand Sperrschicht − Anschluss
RthA
RthT
< 70 K/W 5)
< 30 K/W
1 Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
2 Tj = 25°C unless otherwise specified – Tj = 25°C wenn nicht anders angegeben
3 Non-repetitive pulse see curve IPP = f (t) / PPP = f (t)
Höchstzulässiger Spitzenwert eines einmaligen Impulses, siehe Kurve IPP = f (t) / PPP = f (t)
4 Unidirectional diodes only – Nur für unidirektionale Dioden
5 Mounted on P.C. board with 25 mm2 copper pads at each terminal
Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad) an jedem Anschluss
© Diotec Semiconductor AG http://www.diotec.com/ 1
Pb
E
L
V
W
E
E
E
R
o
H
S
Type
Typ
0.15 1
± 0.3
4.5± 0.3
1.5
±0.1 2.1± 0.2
2.2± 0.2
5± 0.2
2.7 0.2±
P4SMAJ5.0 ... P4SMAJ170CA
Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C)
Type
Typ
Stand-off
voltage
Sperrspannung
Max. rev. current
Max. Sperrstrom
at / bei VWM 1)
Breakdown voltage at IT = 1 mA
Abbruch-Spannung bei IT = 1 mA
*) at / bei IT = 10 mA
Max. clamping voltage
Max. Begrenzer-Spannung
at / bei IPPM (10/1000 µs)
unidirectional bidirectional VWM [V] ID [µA] VBR min [V] VBR max [V] VC [V] IPPM [A]
P4SMAJ5.0
P4SMAJ5.0C
5.0
800
6.4 *)
7.8 *)
10.3
38.8
P4SMAJ5.0A
P4SMAJ5.0CA
5.0
800
6.4 *)
7.0 *)
9.2
43.5
P4SMAJ6.5
P4SMAJ6.5C
6.5
500
7.2 *)
8.8 *)
12.3
32.5
P4SMAJ6.5A
P4SMAJ6.5CA
6.5
500
7.2 *)
8.0 *)
11.2
35.7
P4SMAJ7.0
P4SMAJ7.0C
7.0
200
7.8 *)
9.5 *)
13.3
30.1
P4SMAJ7.0A
P4SMAJ7.0CA
7.0
200
7.8 *)
8.7 *)
12.0
33.3
P4SMAJ7.5
P4SMAJ7.5C
7.5
100
8.3
10.1
14.3
28.0
P4SMAJ7.5A
P4SMAJ7.5CA
7.5
100
8.3
9.2
12.9
31.0
P4SMAJ8.0
P4SMAJ8.0C
8.0
50
8.9
10.9
15.0
26.7
P4SMAJ8.0A
P4SMAJ8.0CA
8.0
50
8.9
9.9
13.6
29.4
P4SMAJ8.5
P4SMAJ8.5C
8.5
10
9.4
11.5
15.9
25.2
P4SMAJ8.5A
P4SMAJ8.5CA
8.5
10
9.4
10.4
14.4
27.8
P4SMAJ9.0
P4SMAJ9.0C
9.0
5
10.0
12.2
16.9
23.7
P4SMAJ9.0A
P4SMAJ9.0CA
9.0
5
10.0
11.1
15.4
26.0
P4SMAJ10
P4SMAJ10C
10
5
11.1
13.5
18.8
21.3
P4SMAJ10A
P4SMAJ10CA
10
5
11.1
12.3
17.0
23.5
P4SMAJ11
P4SMAJ11C
11
5
12.2
14.9
20.1
19.9
P4SMAJ11A
P4SMAJ11CA
11
5
12.2
13.5
18.2
22.0
P4SMAJ12
P4SMAJ12C
12
5
13.3
16.2
22.0
18.2
P4SMAJ12A
P4SMAJ12CA
12
5
13.3
14.8
19.9
20.1
P4SMAJ13
P4SMAJ13C
13
5
14.4
17.6
23.8
16.8
P4SMAJ13A
P4SMAJ13CA
13
5
14.4
16.0
21.5
18.6
P4SMAJ14
P4SMAJ14C
14
5
15.6
19.0
25.8
15.5
P4SMAJ14A
P4SMAJ14CA
14
5
15.6
17.3
23.2
17.2
P4SMAJ15
P4SMAJ15C
15
5
16.7
20.4
26.9
14.9
P4SMAJ15A
P4SMAJ15CA
15
5
16.7
18.6
24.4
16.4
P4SMAJ16
P4SMAJ16C
16
5
17.8
21.7
28.8
13.9
P4SMAJ16A
P4SMAJ16CA
16
5
17.8
19.8
26.0
15.4
P4SMAJ17
P4SMAJ17C
17
5
18.9
23.1
30.5
13.1
P4SMAJ17A
P4SMAJ17CA
17
5
18.9
21.0
27.6
14.5
P4SMAJ18
P4SMAJ18C
18
5
20.0
24.4
32.2
12.4
P4SMAJ18A
P4SMAJ18CA
18
5
20.0
22.2
29.2
13.7
P4SMAJ20
P4SMAJ20C
20
5
22.2
27.1
35.8
11.2
P4SMAJ20A
P4SMAJ20CA
20
5
22.2
24.6
32.4
12.3
P4SMAJ22
P4SMAJ22C
22
5
24.4
29.8
39.4
10.2
P4SMAJ22A
P4SMAJ22CA
22
5
24.4
27.1
35.5
11.3
P4SMAJ24
P4SMAJ24C
24
5
26.7
32.6
43.0
9.3
P4SMAJ24A
P4SMAJ24CA
24
5
26.7
29.6
38.9
10.3
P4SMAJ26
P4SMAJ26C
26
5
28.9
35.3
46.6
8.6
P4SMAJ26A
P4SMAJ26CA
26
5
28.9
32.1
42.1
9.5
P4SMAJ28
P4SMAJ28C
28
5
31.1
37.9
50.0
8.0
P4SMAJ28A
P4SMAJ28CA
28
5
31.1
34.5
45.4
8.8
P4SMAJ30
P4SMAJ30C
30
5
33.3
40.1
53.5
7.5
P4SMAJ30A
P4SMAJ30CA
30
5
33.3
36.9
48.4
8.3
P4SMAJ33
P4SMAJ33C
33
5
36.7
44.8
59.0
6.8
P4SMAJ33A
P4SMAJ33CA
33
5
36.7
40.7
53.3
7.5
P4SMAJ36
P4SMAJ36C
36
5
40.0
48.4
64.3
6.2
1 For bi-directional types having VWM ≤ 10V, the reverse current limit is doubled
Bidirektionale Typen mit VWM ≤ 10V haben die doppelte Sperrstromgrenze
2http://www.diotec.com/ © Diotec Semiconductor AG
P4SMAJ5.0 ... P4SMAJ170CA
Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C)
Type
Typ
Stand-off
voltage
Sperrspannung
Max. rev. current
Max. Sperrstrom
at / bei VWM )
Breakdown voltage at IT = 1 mA
Abbruch-Spannung bei IT = 1 mA
*) at / bei IT = 10 mA
Max. clamping voltage
Max. Begrenzer-Spannung
at / bei IPPM (10/1000 µs)
unidirectional bidirectional VWM [V] ID [µA] VBR min [V] VBR max [V] VC [V] IPPM [A]
P4SMAJ36A
P4SMAJ36CA
36
5
40.0
44.4
58.1
6.9
P4SMAJ40
P4SMAJ40C
40
5
44.4
54.2
71.4
5.6
P4SMAJ40A
P4SMAJ40CA
40
5
44.4
49.3
64.5
6.2
P4SMAJ43
P4SMAJ43C
43
5
47.8
58.3
76.7
5.2
P4SMAJ43A
P4SMAJ43CA
43
5
47.8
53.1
69.4
5.8
P4SMAJ45
P4SMAJ45C
45
5
50.0
61.0
80.3
5.0
P4SMAJ45A
P4SMAJ45CA
45
5
50.0
55.5
72.7
5.5
P4SMAJ48
P4SMAJ48C
48
5
53.3
65.0
85.5
4.7
P4SMAJ48A
P4SMAJ48CA
48
5
53.3
59.2
77.4
5.2
P4SMAJ51
P4SMAJ51C
51
5
56.7
69.2
91.1
4.4
P4SMAJ51A
P4SMAJ51CA
51
5
56.7
62.9
82.4
4.9
P4SMAJ54
P4SMAJ54C
54
5
60.0
73.2
96.3
4.2
P4SMAJ54A
P4SMAJ54CA
54
5
60.0
66.6
87.1
4.6
P4SMAJ58
P4SMAJ58C
58
5
64.4
78.6
103
3.9
P4SMAJ58A
P4SMAJ58CA
58
5
64.4
71.5
93.6
4.3
P4SMAJ60
P4SMAJ60C
60
5
66.7
81.4
107
3.7
P4SMAJ60A
P4SMAJ60CA
60
5
66.7
74.0
96.8
4.1
P4SMAJ64
P4SMAJ64C
64
5
71.1
86.7
114
3.5
P4SMAJ64A
P4SMAJ64CA
64
5
71.1
78.9
103
3.9
P4SMAJ70
P4SMAJ70C
70
5
77.8
94.9
125
3.2
P4SMAJ70A
P4SMAJ70CA
70
5
77.8
86.4
113
3.5
P4SMAJ75
P4SMAJ75C
75
5
83.3
102
134
3.0
P4SMAJ75A
P4SMAJ75CA
75
5
83.3
92.5
121
3.3
P4SMAJ78
P4SMAJ78C
78
5
86.7
106
139
2.9
P4SMAJ78A
P4SMAJ78CA
78
5
86.7
96.2
126
3.2
P4SMAJ85
P4SMAJ85C
85
5
94.4
115
151
2.6
P4SMAJ85A
P4SMAJ85CA
85
5
94.4
105
137
2.9
P4SMAJ90
P4SMAJ90C
90
5
100
122
160
2.5
P4SMAJ90A
P4SMAJ90CA
90
5
100
111
146
2.7
P4SMAJ100
P4SMAJ100C
100
5
111
135
179
2.2
P4SMAJ100A
P4SMAJ100CA
100
5
111
123
162
2.5
P4SMAJ110
P4SMAJ110C
110
5
122
149
196
2.0
P4SMAJ110A
P4SMAJ110CA
110
5
122
135
177
2.3
P4SMAJ120
P4SMAJ120C
120
5
133
162
214
1.9
P4SMAJ120A
P4SMAJ120CA
120
5
133
148
193
2.1
P4SMAJ130
P4SMAJ130C
130
5
144
176
231
1.7
P4SMAJ130A
P4SMAJ130CA
130
5
144
160
209
1.9
P4SMAJ150
P4SMAJ150C
150
5
167
204
268
1.5
P4SMAJ150A
P4SMAJ150CA
150
5
167
185
243
1.6
P4SMAJ160
P4SMAJ160C
160
5
178
217
287
1.4
P4SMAJ160A
P4SMAJ160CA
160
5
178
198
259
1.5
P4SMAJ170
P4SMAJ170C
170
5
189
231
304
1.3
P4SMAJ170A
P4SMAJ170CA
170
5
189
210
275
1.5
P4SMA220 ... P4SMA550CA VWM = 175 ... 495V
© Diotec Semiconductor AG http://www.diotec.com/ 3
P4SMAJ5.0 ... P4SMAJ170CA
1
TVS diodes having breakdown voltage VBR = 220 ... 550 V:
please refer to datasheet P4SMA220 ... 550CA
TVS-Dioden mit Abbruchspannung VBR = 220 ... 550 V:
siehe Datenblatt P4SMA220 ... 550CA
Disclaimer: See data book page 2 or website
Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet
1 Mounted on P.C. board with 25 mm2 copper pads at each terminal
Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad) an jedem Anschluss
4http://www.diotec.com/ © Diotec Semiconductor AG
120
100
80
60
40
20
0
[%]
P
PP
[°C]T
A
150100
50
0
I
PP
Peak pulse power/current vs. ambient temperature )
Impuls-Spitzenleistung/Strom vs. Umgebungstemp. )
1
1
10/1000µs - pulse waveform
10/1000µs - Impulsform
I
PP
P
PP
100
80
60
40
20
00 t 1 2 3 4[ms]
[%]
t
P
I /2
PPM
P /2
PPM
t = 10 µs
r
10
10
1
0.1
2
[kW]
P
PP
0.1µs t 1µs 10µs 100µs 1ms 10ms
P
Non repetitive peak pulse power versus pulse width (10/1000 wave form)
Einzel-Impuls-Spitzenleistung in Abh. von der Pulsdauer (10/1000-Impuls)
[pF]
[V]
C
j
V
Z
unidir.
bidir.
V = 4 V
R
Junction capacitance vs. breakdown voltage (typ.)
Sperrschichtkapazität in Abh. v.d. Abbruchspg. (typ.)
