OM7808/BGU7003W/FMHI,598 - NXP Semiconductors

1. Product profile

1.1 General description

The BGU7003W MMIC is a wideband amplifier in SiGe:C technology for high speed,

low-noise applications in a plastic, leadless 6 pin, extremely thin small outline SOT886

package.

[1] ICC(tot) = ICC + IRF_OUT + IR_BIAS.

[2] The third order intercept point is measured at 30 dBm per tone at RF_IN (f1 = 100 MHz; f2 = 100.2 MHz)

1.2 Features and benefits

Low noise high gain microwave MMIC

Applicable between 40 MHz and 6 GHz

Integrated temperature stabilized bias for easy design

Bias current configurable with external resistor

110 GHz transit frequency - SiGe:C technology

Power-down mode current consumption < 1 A

ESD protection > 1 kV Human Body Model (HBM) on all pins

1.3 Applications

GPS

FM LNA

Low-noise amplifiers for microwave communications systems

WLAN and CDMA applications

Analog / digital cordless applications

BGU7003W

Wideband silicon germanium low-noise amplifier MMIC

Rev. 2 — 11 April 2013 Product data sheet

Table 1. Application information

Tamb = 25



C; VCC = 2.85 V; ICC(tot) = 3.2 mA [1]; VENABLE



0.7 V; f = 100 MHz; ZS = ZL = 50



unless

otherwise specified. All measurements are done with the SMA-connectors as reference plane.

Application NF s212RLin RLout Pi(1dB) PL(1dB) IP3IIP3O

(dB) (dB) (dB) (dB) (dBm) (dBm) (dBm) (dBm)

high-ohmic FM LNA 1.2 13 0.5 16.5 23 11 15 [2] 2 [2]

Product data sheet Rev. 2 — 11 April 2013 2 of 14

NXP Semiconductors BGU7003W

Wideband silicon germanium low-noise amplifier MMIC

2. Pinning information

3. Ordering information

4. Marking

5. Limiting values

[1] Tsp is the temperature at the solder point of the ground lead.

6. Thermal characteristics

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1R_BIAS

2RF_IN

3GND

4RF_OUT

5 ENABLE

Transparent

top view

456

321

sym128

5 6

Table 3. Ordering information

Type number Package

Name Description Version

BGU7003W XSON6 plastic extremely thin small outline package; no leads;

6 terminals; body 1 1.45 0.5 mm SOT886

Table 4. Marking codes

Type number Marking code

BGU7003W UW

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCC supply voltage RF input AC coupled - 3.0 V

ICC(tot) total supply current configurable with external resistor - 25 mA

Ptot total power dissipation Tsp  103 C[1] -70mW

Tstg storage temperature 65 +150 C

Tjjunction temperature - 150 C

Table 6. Thermal characteristics

Symbol Parameter Conditions Typ Unit

Rth(j-sp) thermal resistance from junction to solder point 235 K/W

Product data sheet Rev. 2 — 11 April 2013 3 of 14

NXP Semiconductors BGU7003W

Wideband silicon germanium low-noise amplifier MMIC

7. Characteristics

[1] ICC(tot) = ICC + IRF_OUT + IR_BIAS.

[2] Guaranteed by design and characterization.

Table 7. Characteristics

Tamb =25



C; VCC = 2.5 V; ICC(tot) = 5. 0 mA; VENABLE



0.7 V unless otherwise specified. All

measurements done on characterization board withou t matching, de-embedded up to the pins.

Symbol Parameter Conditions Min Typ Max Unit

VCC supply voltage RF input AC coupled 2.2 - 2.85 V

ICC(tot) total supply current configurable with

external resistor [1] 3- 15mA

VENABLE  0.4 V [1] - - 0.001 mA

Tamb ambient temp erature 40 +25 +85 C

s212insertion power gain Tamb = 25 C

f = 100 MHz [2] 21.0 22.5 - dB

f = 900 MHz [2] 18.5 20.0 - dB

f = 1.575 GHz 16.0 17.5 - dB

f = 2.4 GHz [2] 14.0 15.2 - dB

f = 5.8 GHz [2] 10.0 11.4 - dB

40 C  Tamb  +85 C

f = 100 MHz [2] 20.0 22.5 - dB

f = 900 MHz [2] 17.5 20.0 - dB

f = 1.575 GHz [2] 15.0 17.5 - dB

f = 2.4 GHz [2] 13.0 15.2 - dB

f = 5.8 GHz [2] 9.0 11.4 - dB

MSG maximum stable gain f = 100 MHz - 33.8 - dB

f = 900 MHz - 23.8 - dB

f = 1.575 GHz - 20.5 - dB

f = 2.4 GHz - 17.8 - dB

f = 5.8 GHz - 15.4 - dB

NFmin minimum noise figure f = 100 MHz - 0.6 - dB

f = 900 MHz - 0.6 - dB

f = 1.575 GHz - 0.7 - dB

f = 2.4 GHz - 0.8 - dB

f = 5.8 GHz - 1.5 - dB

Table 8. ENABLE (pin 5)







Tamb



+85



VENABLE (V) State

 0.4 OFF

 0.7 ON

Product data sheet Rev. 2 — 11 April 2013 4 of 14

NXP Semiconductors BGU7003W

Wideband silicon germanium low-noise amplifier MMIC

Tamb = 25 C.

(1) VCC = 2.2 V

(2) VCC = 2.5 V

(3) VCC = 2.85 V

Fig 1. Total supply current as a function of bias resistor; typical values

Tamb = 25 C; ICC(tot) = 5.0 mA; VCC = 2.5 V; Pdrive = 30 dBm; Z0 = 50 .

Fig 2. Input reflection coefficient (S11); typical values

Rbias (Ω)

0 70002000 4000 600050001000 3000

001aaj652

ICC(tot)

(mA)

(1)

(2)

(3)

001aaj653

90°

-90°

0.5

6 GHz 100 MHz

0.2

+0.2

-5

-2

-0.2

+0.5

-0.5

-1

110 0

0.2

0.6

0.4

0.8

1.0

-45°-135°

45°135°

180° 0°

Product data sheet Rev. 2 — 11 April 2013 5 of 14

NXP Semiconductors BGU7003W

Wideband silicon germanium low-noise amplifier MMIC

Tamb = 25 C; ICC(tot) = 5.0 mA; VCC = 2.5 V; Pdrive = 30 dBm; Z0 = 50 .

Fig 3. O utp ut re flection coefficient (S22); typical values

001aaj654

90°

-90°

0.5

6 GHz 100 MHz

0.2

+0.2

-5

-2

-0.2

+0.5

-0.5

-1

110 0

0.2

0.6

0.4

0.8

1.0

-45°-135°

45°135°

180°0°

Tamb = 25 C; ICC(tot) = 5.0 mA; VCC = 2.5 V;

Pdrive =30 dBm; Z0 = 50 . Tamb = 25 C; ICC(tot) = 5.0 mA; VCC = 2.5 V;

Pdrive =30 dBm; Z0 = 50 .

Fig 4. In se rtion power gain (s212) as a function of

frequency; typical values Fig 5. Isolation (s122) as a function of frequency;

typical values

f (MHz)

0 600040002000

001aaj655

|s21|2

(dB)

f (MHz)

0 600040002000

001aaj657

−40

−20

|s12|2

(dB)

−60

Product data sheet Rev. 2 — 11 April 2013 6 of 14

NXP Semiconductors BGU7003W

Wideband silicon germanium low-noise amplifier MMIC

Tamb = 25 C; ICC(tot) = 5.0 mA; VCC = 2.5 V;

Pdrive =30 dBm; Z0 = 50 . Tamb = 25 C; ICC(tot) = 5.0 mA; VCC = 2.5 V;

Pdrive =30 dBm; Z0 = 50 .

Fig 6. Rollet’s stability factor as a function of

frequency; typical values Fig 7. Minimum noise figure as a function of

frequency; typical values

001aaj659

10−1

f (MHz)

0 600040002000

001aaj660

f (MHz)

0 600040002000

1.0

0.5

1.5

2.0

NFmin

(dB)

Tamb = 25 C; ICC(tot) = 5.0 mA; VCC = 2.5 V.

Fig 8. Optimum source reflection coefficient for minimum noise figure; typical va lues

001aaj661

90°

-90°

0.5

6 GHz

100 MHz

0.2

+0.2

-5

-2

-0.2

+0.5

-0.5

-1

110 0

0.2

0.6

0.4

0.8

1.0

-45°-135°

45°135°

180° 0°

Product data sheet Rev. 2 — 11 April 2013 7 of 14

NXP Semiconductors BGU7003W

Wideband silicon germanium low-noise amplifier MMIC

8. Application information

8.1 High-ohmic FM LNA

[1] See application note: AN11034 for details.

[2] ICC(tot) = ICC + IRF_OUT + IR_BIAS.

[3] The third order intercept point is measured at 30 dBm per tone at RF_IN (f1 = 100 MHz; f2 = 100.2 MHz)

Tamb = 25 C; ICC(tot) = 5.0 mA; VCC = 2.5 V.

Normalized to 50 .

Fig 9. Equivalent noise resistance as a function of frequency; typical values

f (MHz)

0 600040002000

001aaj662

0.1

0.2

0.3

rn(eq)

Table 9. Characteristics [1]

Tamb = 25



C; VCC = 2.85 V; ICC(tot) = 3.2 mA [2]; VENABLE



0.7 V; f = 100 MHz; ZS = ZL = 50



unless

otherwise specified. All measurements are done with the SMA-connectors as reference plane.

Symbol Parameter Conditions Min Typ Max Unit

NF noise figure - 1.2 - dB

s212Insertion power gain - 13 - dB

RLin input return loss - 0.5 - dB

RLout output return loss - 16.5 - dB

Pi(1dB) input power at 1 dB gain compression - 23 - dBm

PL(1dB) output power at 1 dB gain compression - 11 - dBm

IP3Iinput third-order intercept point [3] -15 - dBm

IP3Ooutput third-order intercept point [3] -2- dBm

Product data sheet Rev. 2 — 11 April 2013 8 of 14

NXP Semiconductors BGU7003W

Wideband silicon germanium low-noise amplifier MMIC

8.2 50 ohm FM LNA

[1] See application note AN11035 for details.

[2] ICC(tot) = ICC + IRF_OUT + IR_BIAS.

[3] The third order intercept point is measured at 30 dBm per tone at RF_IN (f1 = 100 MHz; f2 = 100.2 MHz)

Table 10. Characteristics[1]

Tamb = 25



C; VCC = 2.8 V; ICC(tot) = 4. 3 mA [2]; VENABLE



0.7 V; f = 100 MHz; ZS = ZL = 50



(input

and output matched to 50



) unless otherwise specified. All measuremen ts are done with the

SMA-connectors as reference plane.

Symbol Parameter Conditions Min Typ Max Unit

NF noise figure - 1.5 - dB

s212Insertion power gain - 15 - dB

RLin input return loss - 9 - dB

RLout output return loss - 14 - dB

Pi(1dB) input power at 1 dB gain compression - 20 - dBm

PL(1dB) output power at 1 dB gain compression - 6-dBm

IP3Iinput third-order intercept point [3] -12.5 - dBm

IP3Ooutput third-order intercept point [3] -2.5- dBm

Product data sheet Rev. 2 — 11 April 2013 9 of 14

NXP Semiconductors BGU7003W

Wideband silicon germanium low-noise amplifier MMIC

9. Package outline

Fig 10. Package outline SOT886 (XSON6)

References

Outline

version European

projection Issue date

IEC JEDEC JEITA

SOT886 MO-252

sot886_po

04-07-22

12-01-05

Unit

mm max

nom

min

0.5 0.04 1.50

1.45

1.40

1.05

1.00

0.95

0.35

0.30

0.27

0.40

0.35

0.32

0.6

A(1)

Dimensions (mm are the original dimensions)

Notes

1. Including plating thickness.

2. Can be visible in some manufacturing processes.

XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm SOT886

A1b

0.25

0.20

0.17

DEee

0.5

terminal 1

index area

0 1 2 mm

scale

(2)

Product data sheet Rev. 2 — 11 April 2013 10 of 14

NXP Semiconductors BGU7003W

Wideband silicon germanium low-noise amplifier MMIC

10. Handling information

11. Soldering

12. Abbreviations

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling

electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or

equivalent standards.

Reflow soldering is the only recommended soldering method.

Fig 11. Reflow soldering footprint

sot886_fr

solder resist

occupied area

solder paste = solderland

Dimensions in mm

0.425

(6×)

1.250

0.675

1.700

0.325

(6×)

0.270

(6×)

0.370

(6×)

0.500

Table 11. Abbreviations

Acronym Description

AC Alternating Current

CDMA Code Division Multiple Access

DC Direct Current

FM Frequency Modula tion

FR4 Flame Retardant 4

GPS Global Positioning System

LNA Low-Noise Amplifier

MMIC Monolithic Microwave Integrate d Circuit

RF Radio Frequency

SiGe:C Silicon Germanium Carbon

SMA SubMiniature version A

WLAN Wireless Local Area Network

Product data sheet Rev. 2 — 11 April 2013 11 of 14

NXP Semiconductors BGU7003W

Wideband silicon germanium low-noise amplifier MMIC

13. Revision history

Table 12. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BGU7003W v.2 20130411 Product data sheet - BGU70 03W v.1

Modifications: •Figure 10 on page 9: figure has been updated.

BGU7003W v.1 20110830 Product data sheet - -

Product data sheet Rev. 2 — 11 April 2013 12 of 14

NXP Semiconductors BGU7003W

Wideband silicon germanium low-noise amplifier MMIC

14. Legal information

14.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

14.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre vail.

Product specificatio n — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond tho se described in the

Product data sheet.

14.3 Disclaimers

Limited warr a nty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information. NXP Se miconductors takes no

responsibility for the content in this document if provided by an inf ormation

source outside of NXP Semiconductors.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequ ential damages (including - wit hout limitatio n - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggregate and cumulat ive liability toward s

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors product s are not designed,

authorized or warranted to be suitable for use in life support, lif e-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in perso nal injury, death or severe property or environmental

damage. NXP Semiconductors and its suppliers accept no liability for

inclusion and/or use of NXP Semiconducto rs products in such equipment or

applications and ther efore such inclu sion and/or use is at the cu stomer’s own

risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applicati ons or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessary

testing for th e customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter ms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by cust omer.

No offer to sell or license — Nothing i n this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or t he grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] dat a sheet Production This document contains the product specification.

Product data sheet Rev. 2 — 11 April 2013 13 of 14

NXP Semiconductors BGU7003W

Wideband silicon germanium low-noise amplifier MMIC

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for aut omotive use. It i s neither qua lif ied nor test ed

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in au tomotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standard s, customer

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconductors for any

liability, damages or failed product claims resulting fr om customer design and

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

Translations — A non-English (translated) version of a docume nt is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

14.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

15. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors BGU7003W

Wideband silicon germanium low-noise amplifier MMIC

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 11 April 2013

Document identifier: BGU7003W

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

16. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 2

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

8 Application information. . . . . . . . . . . . . . . . . . . 7

8.1 High-ohmic FM LNA . . . . . . . . . . . . . . . . . . . . . 7

8.2 50 ohm FM LNA . . . . . . . . . . . . . . . . . . . . . . . . 8

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

10 Handling information. . . . . . . . . . . . . . . . . . . . 10

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

12 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10

13 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12

14.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12

14.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

14.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

14.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

15 Contact information. . . . . . . . . . . . . . . . . . . . . 13

16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

NXP:

OM7807/BGU7003W/FM50,598 OM7808/BGU7003W/FMHI,598