TO-220 Plastic-Encapsulate Transistors TIP32/32A/32B/32C TRANSISTOR ( PNP ) TO220 a FEATURES [ f i Power dissipation | Pew: z We ( Tamb=25 0 } TON TT Collector current 1.BASE | | mee 2. COLLECTOR | ' Y Collector-base voltage 124 Viewceo: TIPS1: -40 4. EMITTER TIPS1A : -60 V TIPS1B: -80 V TIPSIC : -100V Operating and storage junction temperature range Ty. Teg -85C to +1500 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbal Test conditions MIM MAK WNIT a2 -40 Collector-base breakdown voltage a2A VibRoceo | le=-100 pA, tao -60 r 32B -BO 320 -100 32 -10 Collector-emitter breakdown voltage a24 WieRicco | ic=-30 mA, [=O -60 W 32B -BO 3M. -100 Emitter-base breakdown voltage WibPices | le=-100 pA, b=0 5 i da Voom 40 VO le=0 Collector cut-off current 324 = Voe=- 60 V, le=O 328 ko | Mee 80 MV, e=0 ae mii 326 Woe=-100 VO le=0 Collector cut-off curremt 32924 Voe=-30 , feo whe bgt 32B92C Voe=-B0W . bo ane Emitter cut-off current lean Ve=SV, I=0 -1 mA Frei) Voe= Vo b= -34 10 50 DC current gain Been Vee@ 4 Vibe TA 25 Collector-emitter saturation yollage Voce b=-3A, lg=-3 7 Sr, 1.2 v Base-emitter voltage Weeien Vee av, eed A -1.6 i Transition frequency fr Vee=-10 . ic=-S00mA 4 MHz