Features
l Planar Die construction
l 200mW Power Dissipation
l Zener Voltages from 2.4V - 39V
l Ideally Suited for Automated Assembly Processes
Mechanical Data
l Case: SOD-323 Molded Plastic
l Terminals: Solderable per MIL-STD-202, Method 208
l Approx. Weight: 0.008 gram
l Mounting Position: Any
l Storage & Operating Junction Temperature: -55oC to +150oC
Maximum Ratings @ 25oC Unless Otherwise Specified
Zener Current IF
100
mA
Maximum Forward
Voltage VF 1.2 V
Power Dissipation
(Notes A) P(AV) 200 mWatt
Peak Forward Surge IFSM 2.0 Amps
NOTES:
BZT52C2V4S
THRU
BZT52C39S
200 mW
Zener Diodes
2.4 to 39 Volts
MCC
www.mccsemi .com
A. Mounted on 5.0mm2(.013mm thick) land areas.
B. Measured on 8.3ms, single half sine-wave or equivalent
Current (Notes B )
square wave, duty cycle = 4 pulses per minute maximum.
INCHES MM DIM MIN MAX MIN MAX NOTE
A .090 .107 2.30 2.70
B .068 .078 1.75 1.95
C .045 .054 1.15 1.35
D .027 .038 0.70 0.95
E .009 .014 0.25 0.35
F .002 .006 0.05 0.15
G .012 --- 0.30 ---
SOD323
0.031
0.059"
0.039
SUGGESTED SOLDER
PAD LAYOUT
A
B
E
C
D
G
DIMENSIONS
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BZT52C2V4S thru BZT52C39S
MCC
Electrical Characteristics @ 25oC Unless Otherwise Specified
NORMAL
ZENER
VOLTAGE
Vz@ Izt
TEST
CURRENT Izt
MAXIMUM ZENER
IMPEDANCE
‘B’ SUFFIX ONLY
Zzt @ Izt Zzk @ Izk=0.25mA
MAXIMUM REVERSE
LEAKAGE CURRENT
Ir @ Vr
TYPICAL TEMP
COEFFICIENT
MCC PART
NUMBER
Marking
VOLTS mA OHMS OHMS uA VOLTS TC
BZT52C2V4S W1 2.4 5 85 600 100 1.0 -0.075
BZT52C2V7S W2 2.7 5 83 500 75 1.0 -0.065
BZT52C3S W3 3.0 5 95 500 50 1.0 -0.060
BZT52C3V3S W4 3.3 5 95 500 25 1.0 -0.055
BZT52C3V6S W5 3.6 5 95 500 15 1.0 -0.055
BZT52C3V9S W6 3.9 5 95 500 10 1.0 -0.050
BZT52C4V3S W7 4.3 5 95 500 5.0 1.0 -0.035
BZT52C4V7S W8 4.7 5 78 500 5.0 2.0 -0.015
BZT52C5V1S W9 5.1 5 60 480 0.1 0.8 +0.005
BZT52C5V6S WA 5.6 5 40 400 0.1 1.0 +0.020
BZT52C6V2S WB 6.2 5 10 200 0.1 2.0 +0.030
BZT52C6V8S WC 6.8 5 8.0 150 0.1 3.0 +0.045
BZT52C7V5S WD 7.5 5 7.0 50 0.1 5.0 +0.050
BZT52C8V2S WE 8.2 5 7.0 50 0.1 6.0 +0.055
BZT52C9V1S WF 9.1 5 10 50 0.1 7.0 +0.065
BZT52C10S WG 10 5 15 70 0.1 7.5 +0.070
BZT52C11S WH 11 5 20 70 0.1 8.5 +0.075
BZT52C12S WI 12 5 20 90 0.1 9.0 +0.080
BZT52C13S WK 13 5 25 110 0.1 10 +0.080
BZT52C15S WL 15 5 30 110 0.1 11 +0.090
BZT52C16S WM 16 5 40 170 0.1 12 +0.090
BZT52C18S WN 18 5 50 170 0.1 14 +0.090
BZT52C20S WO 20 5 50 220 0.1 15 +0.090
BZT52C22S WP 22 5 55 220 0.1 17 +0.090
BZT52C24S WR 24 5 80 220 0.1 18 +0.090
BZT52C27S WS 27 5 80 250 0.1 20 +0.090
BZT52C30S WT 30 5 80 250 0.1 22.5 +0.090
BZT52C33S WU 33 5 80 250 0.1 25 +0.090
BZT52C36S WW 36 5 90 250 0.1 27 +0.090
BZT52C39S WX 39 5 90 300 0.1 29 +0.110
NOTE:
1.Tolerance and Type Number Designation. The type numbers listed have a standard tolerance on the nominal zener voltage of ±5%.
2.Specials Available Include:
A. Nominal zener voltages between the voltages shown and tighter voltage tolerances.
B. Matched sets.
3.Zener Voltage (VZ) Measurement. Guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (TL) at 30OC, from the diode body.
4.Zener Impedance (ZZ) Derivation. The zener impedance is derived from the 60 cycle ac voltage, which results when an AC current having an rms value equal to 10% of the dc zener
current (IZT or IZK) is superimposed on IZT or IZK.
5.Surge Current (IR) Non-Repetitive. The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine
wave pulse of 1/120 second duration superimposed on the test current, IZT, per JEDEC registration; however, actual device capability is as described in Figure 5.
BZT52C2V4S thru BZT52C39S
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MCC
TYPICAL REVERSE CURRENT
TEMPERATURE COEFFICIENT,mV / C)
o
NOMINAL ZENER VOLTAGE, Volts
-1
0
1
2
3
4
5
6
7
8
12111098765432
-2
-3
STEADY STATE POWER DERATING
EFFECT OF ZENER VOLTAGE ON ZENER IMPEDANCE
100101
1000
100
10
1
IZ=1mA
5mA
20 mA
DYNAMIC IMPEDANCE, W
NORMAL ZENER VOLTAGE, Volts
T
J
=25 C
O
I
Z(AC)=0.1
I
F=1 kHZ
Z(DC)
FORWARD CURRENT,mA
TYPICAL FORWARD VOLTAGE
FORWARD VOLTAGE, Volts
1.21.11.00.90.80.70.60.50.4
1000
100
10
1
75 C
O
5C
O
25 C
O
150 C
O
TYPICAL CAPACITANCE
100
1000
100
10
1101
BIAS AT
50% OF VZNOM
0 V BIAS
1 V BIAS
CAPACITANCE, pF
NOMINAL ZENER VOLTAGE, Volts
T =25 C
A
o
100
10
1
NOMINAL ZENER VOLTAGE, Volts
TEMPERATURE COEFFICIENT,mV / C)
o
10 100
TEMPERATURE ( C)
o
POWER DISSIPATION, Watts
STEADY STATE POWER DERATING
1.2
1.0
0.8
0.6
0.4
0.2
0
150125100755025
P
DV
.
S
.T
A
155
BZT52C2V4S thru BZT52C39S MCC
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ZENER VOLTAGE V.S. ZENER CURRENT
TYPICAL LEAKGE CURRENT
90
1000
100
10
1
0.1
0.01
0.001
0.0001
0.00001 80706050403020100
LEAKAGE CURRENT ( A)m
NOMINAL ZENER VOLTAGE, Vlots
+150 C
O
+25 C
O
-55 C
O
12
100
10
1
0.1
0.01 1086420
ZENER CURRENT,mA
ZENER VOLTAGE, Volts
T =25 C
A
o
100
10
1
0.1
0.01 10 30 50 70 90
T =25 C
A
o
ZENER VOLTAGE, Volts
ZENER VOLTAGE V.S. ZENER CURRENT
ZENER CURRENT,mA