LM4871LDNOPB - NATIONAL SEMICONDUCTOR

LM48413

LM48413 Ultra Low EMI, Filterless, 1.2W Stereo Class D Audio Power

Amplifier withE2S and National 3D Enhancement

Literature Number: SNAS460A

January 9, 2009

LM48413

Ultra Low EMI, Filterless, 1.2W Stereo Class D Audio Power

Amplifier with E2S and National 3D Enhancement

General Description

The LM48413 is a single supply, high efficiency, 1.2W/chan-

nel, filterless switching audio amplifier. The LM48413 fea-

tures National’s Enhanced Emissions Suppression (E2S)

system - a unique patented ultra low EMI, spread spectrum,

PWM architecture. It significantly reduces RF emission while

preserving audio quality and efficiency. The E2S system im-

proves battery life, reduces external component count, board

area consumption, system cost and product design cycle

time. The LM48413TL is available in a micro-SMD package,

further saving space.

The LM48413 is designed to meet the demands of mobile

phones and other portable communication devices. Operat-

ing from a single 5V supply, the device is capable of delivering

1.2W/channel of continuous output power to a 8Ω load with

less than 1% THD+N. Flexible power supply requirements al-

low operation from 2.4V to 5.5V. The wide band spread

spectrum architecture of the LM48413 reduces EMI-radiated

emissions due to the modulator frequency.

The LM48413 features high efficiency compared with con-

ventional Class AB amplifiers. The E2S system includes an

advanced, patent-pending edge rate control (ERC) architec-

ture that further reduce emissions by minimizing the high

frequency components of the device output, while maintain-

ing its high quality audio reproduction and high efficiency (η

= 85% at VDD = 3.6V, PO = 500mW). The LM48413 also in-

cludes National’s 3D audio enhancement that improves

stereo sound quality. In devices where the left and right

speakers are in close proximity, 3D enhancement affects

channel specialization, widening the perceived soundstage.

Output short circuit protection prevents the device from being

damaged during fault conditions. Superior click and pop sup-

pression eliminates audible transients on power up/down and

during shutdown. Shutdown control also provided to maxi-

mizes power savings.

Key Specifications

■ Quiescent Power Supply Current

at 3.6V supply 4mA (typ)

■ Power Output at VDD = 5V,

RL = 8Ω, THD ≤ 1% 1.2W (typ)

■ Shutdown current 0.03μA (typ)

■ Efficiency at 3.6V, 100mW into 8Ω80% (typ)

■ Efficiency at 3.6V, 500mW into 8Ω85% (typ)

■ Efficiency at 5V, 1W into 8Ω86% (typ)

Features

■E2S system reduces EMI preserving audio quality and

efficiency

■Output Short Circuit Protection

■Stereo Class D operation

■No output filter required

■National 3D Enhancement

■Minimum external components

■Click and Pop suppression

■Micro-power shutdown

■Available in space-saving approximately 2mm x 2.2mm

micro SMD package

Applications

■Mobile phones

■PDAs

■Laptops

EMI Plot Using 6 inch Speaker Cables

EMI Radiation vs Frequency

VDD = 3V, RL = 15μH + 8Ω + 15μH

30063536

Boomer® is a registered trademark of National Semiconductor Corporation.

LM48413 Ultra Low EMI, Filterless, 1.2W Stereo Class D Audio Power Amplifier with E2S and

National 3D Enhancement

Typical Application

30063541

FIGURE 1. Typical Audio Amplifier Application Circuit

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LM48413

Connection Diagrams

30063538

Top View

Order Number LM48413TL

See NS Package Number TLA18CBA

30063539

Top View

XY = 2 Digit date code

TT = Die Traceability

G = Boomer Family

L2 = LM48413TL

Ordering Information

Order Number Package Package DWG # Transport Media MSL Level Green Status

LM48413TL 18 Bump micro SMD TLA18CBA 250 units on tape and reel 1 RoHS & no Sb/Br

LM48413TLX 18 Bump micro SMD TLA18CBA 3000 units on tape and reel 1 RoHS & no Sb/Br

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LM48413

Bump Descriptions

Bump Name Description

A1 INL- Left Channel Inverting Input

A3 3DEN 3D Enable Input

A5 OUTLA Left Channel Non-Inverting Output

A7 OUTLB Left Channel Inverting Output

B2 INL+ Left Channel Non-Inverting Input

B4 3DL- Left Channel inverting 3D connection. Connect to 3DR- through C3D- and R3D-

B6 GND Ground

C1 3DL+ Left Channel non-inverting 3D connection. Connect to 3DR+ through C3D+ and R3D+

C3 3DR+ Right Channel non-inverting 3D connection. Connect to 3DL+ through C3D+ and R3D+

C5 VDD Power Supply. Connect to PVDD supplying same voltage.

C7 PGND Power Ground

D2 INR+ Right Channel Non-inverting Input

D4 3DR- Right Channel inverting 3D connection. Connect to 3DL- through C3D- and R3D-

D6 PVDD Amplifier Power Supply

E1 INR- Right Channel Inverting Input

E3 SD Connect to GND for disabling the device. Connect to VDD for normal operation.

E5 OUTRA Right Channel Non-inverting Output

E7 OUTRB Right Channel Inverting Output

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LM48413

Absolute Maximum Ratings (Notes 1, 2)

If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

Supply Voltage (Note 1) 6.0V

Storage Temperature −65°C to +150°C

Input Voltage –0.3V to VDD + 0.3V

Power Dissipation (Note 3) Internally Limited

ESD Rating (Note 4) 2000V

ESD Rating (Note 5) 200V

Junction Temperature 150°C

Thermal Resistance

θJA 47°C/W

Operating Ratings (Notes 1, 2)

Temperature Range

TMIN ≤ TA ≤ TMAX −40°C ≤ TA ≤ 85°C

Supply Voltage (VDD, PVDD)2.4V ≤ VDD ≤ 5.5V

Electrical Characteristics VDD = PVDD = 3.6V (Notes 1, 2) The following specifications apply for

RL = 8Ω (Note 8), f = 1kHz, unless otherwise specified. Limits apply for TA = 25°C.

Symbol Parameter Conditions

LM48413 Units

(Limits)

Typical Limit

(Note 6) (Note 7)

VOS Differential Output Offset Voltage VIN = 0, VDD = 2.4V to 5.0V 3 mV

IDD Quiescent Power Supply Current

VIN = 0, No Load, VSD = VDD,

VDD = 3.6V

VDD = 5V

4.3

5.2

5.5

mA (max)

ISD Shutdown Current VSD = GND 0.03 1 μA (max)

VIH Logic Input High Voltage 1.4 V (min)

VIL Logic Input Low Voltage 0.4 V (max)

TWU Wake-Up Time 4 ms

AVGain 24 23.5

24.5

dB (min)

dB (max)

RIN Input Resistance 20 kΩ

POOutput Power (Per Channel)

THD ≤ 10%, f = 1kHz, 22kHz BW

VDD = 5V 1.5 W

VDD = 3.6V 720 600 mW (min)

VDD = 2.5V 320 mW

THD ≤ 1%, f = 1kHz, 22kHz BW

VDD = 5V 1.2 W

VDD = 3.6V 600 mW

VDD = 2.5V 260 mW

THD+N Total Harmonic Distortion + Noise

PO = 500mW/Ch, f = 1kHz,

22kHz BW 0.03 %

PO = 300mW/Ch, f = 1kHz,

22kHz BW 0.03 %

PSRR Power Supply Rejection Ratio

VRIPPLE = 200mVP-P Sine,

Inputs AC GND,

CIN = 1μF, input referred

fRIPPLE = 217Hz

fRIPPLE = 1kHz

CMRR Common Mode Rejection Ratio VRIPPLE = 1VP-P

fRIPPLE = 217Hz 72 dB

ηEfficiency PO = 1W/Ch, f = 1kHz,

RL = 8Ω, VDD = 5V 86 %

XTALK Crosstalk PO = 500mW/Ch, f = 1kHz 93 dB

SNR Signal-to-Noise Ratio VDD = 5V, PO = 1W 88 dB

εOS Output Noise Input referred, A-Weighted 5 μV

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LM48413

Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of device reliability

and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or other conditions beyond those indicated in

the Recommended Operating Conditions is not implied. The Recommended Operating Conditionsindicate conditions at which the device is functional and the

device should not be operated beyond such conditions. All voltages are measured with respect to the ground pin, unless otherwise specified.

Note 2: The Electrical Characteristics tables list guaranteed specifications under the listed Recommended Operating Conditions except as otherwise modified

or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and are not guaranteed.

Note 3: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJMAX, θJA, and the ambient temperature, TA. The maximum

allowable power dissipation is PDMAX = (TJMAX - TA) / θJA or the number given in Absolute Maximum Ratings, whichever is lower.

Note 4: Human body model, applicable std. JESD22-A114C.

Note 5: Machine model, applicable std. JESD22-A115-A. The ESD Machine Model rating of device bump E3 = 150V.

Note 6: Typical values represent most likely parametric norms at TA = +25°C, and at the Recommended Operation Conditions at the time of product

characterization and are not guaranteed.

Note 7: Datasheet min/max specification limits are guaranteed by test or statistical analysis.

Note 8: RL is a resistive load in series with two inductors to simulate an actual speaker load. For RL = 8Ω, the load is 15µH + 8Ω +15µH.

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LM48413

Typical Performance Characteristics

THD+N vs Output Power/Channel

f = 1kHz, RL = 8Ω, 22kHz BW

30063543

THD+N vs Frequency

VDD = 2.5V, POUT = 100mW/Ch

RL = 8Ω, 22kHz BW

30063517

THD+N vs Frequency

VDD = 3.6V, POUT = 250mW/Ch

RL = 8Ω, 22kHz BW

30063519

THD+N vs Frequency

VDD = 5V, POUT = 375mW/Ch

RL = 8Ω, 22kHz BW

30063521

Efficiency vs Output Power

RL = 8Ω, f = 1kHz

30063533

Power Dissipation vs Total Output Power

RL = 8Ω, f = 1kHz

30063544

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LM48413

Output Power/Channel vs Supply Voltage

RL = 8Ω, f = 1kHz, 22kHz BW

30063542

PSRR and CMRR vs Frequency

VDD = 3.6V, RL = 8Ω

30063537

Crosstalk vs Frequency

VDD = 3.6V, PO = 500mW, RL = 8Ω

30063531

Supply Current vs Supply Voltage

No Load

30063529

EMI Radiation vs Frequency

VDD = 3V, RL = 8Ω, 3 inch cables

30063535

EMI Radiation vs Frequency

VDD = 3V, RL = 8Ω, 6 inch cables

30063536

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LM48413

EMI Radiation vs Frequency

VDD = 3V, RL = 8Ω, 12 inch cables

30063534

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LM48413

Application Information

GENERAL AMPLIFIER FUNCTION

The LM48413 stereo Class D audio power amplifier features

a filterless modulation scheme that reduces external compo-

nent count, conserving board space and reducing system

cost. The outputs of the device transition from PVDD to GND

with a 390kHz switching frequency. With no signal applied,

the outputs switch with a 50% duty cycle, in phase, causing

the two outputs to cancel. This cancellation results in no net

voltage across the speaker, thus there is no current to the load

in the idle state.

When an input signal is applied, the duty cycle (pulse width)

of the LM48413 output's change. For increasing output volt-

age, the duty cycle of one side of each output increases, while

the duty cycle of the other side of each output decreases. For

decreasing output voltages, the converse occurs. The differ-

ence between the two pulse widths yields the differential

output voltage.

SHUTDOWN FUNCTION

The LM48413 features a low current shutdown mode. Set

SD = GND to disable the amplifier and reduce supply current

to 0.03μA.

Switch SD between GND and VDD for minimum current con-

sumption in shutdown. The LM48413 may be disabled with

shutdown voltages in between GND and VDD, but the idle

current will be greater than the typical value. The LM48413

shutdown input has an internal 300kΩ pull-down resistor. The

purpose of this resistor is to eliminate any unwanted state

changes when this pin is floating. To minimize shutdown cur-

rent, it should be driven to GND or left floating. If it is not driven

to GND, or floating, a small increase in shutdown supply cur-

rent will be noticed.

SPREAD SPECTRUM

The LM48413 outputs are modulated in spread spectrum

scheme eliminating the need for output filters, ferrite beads or

chokes. During its operation, the switching frequency varies

randomly by 30% about a 390kHz center frequency, reducing

the wideband spectral content and improving EMI emissions

radiated by the speaker and associated cables and traces. A

fixed frequency class D exhibits large amounts of spectral

energy at multiples of the switching frequency. The spread

spectrum architecture of the LM48413 spreads the same en-

ergy over a larger bandwidth. The cycle-to-cycle variation of

the switching period does not affect the audio reproduction,

efficiency, or PSRR.

ENHANCED EMISSIONS SUPPRESSION SYSTEM (E2S)

The LM48413 features National’s patented E2S system that

further reduces EMI, while maintaining high quality audio re-

production and efficiency. The advanced edge rate control

(ERC) embedded within the E2S system works simultane-

ously with the spread spectrum already activated. The

LM48413 ERC greatly reduces the high frequency compo-

nents of the output square waves by controlling the output rise

and fall times, slowing the transitions to reduce RF emissions,

while maximizing THD+N and efficiency performance.

DIFFERENTIAL AMPLIFIER EXPLANATION

As logic supplies continue to shrink, system designers are in-

creasingly turning to differential analog signal handling to

preserve signal to noise ratios with restricted voltage swings.

The LM48413 features two fully differential speaker ampli-

fiers. A differential amplifier amplifies the difference between

the two input signals. Traditional audio power amplifiers have

typically offered only single-ended inputs resulting in a 6dB

reduction of SNR relative to differential inputs. The LM48413

also offers the possibility of DC input coupling which elimi-

nates the input coupling capacitors. A major benefit of the fully

differential amplifier is the improved common mode rejection

ratio (CMRR) over single-ended input amplifiers. The in-

creased CMRR of the differential amplifier reduces sensitivity

to ground offset related noise injection, especially important

in noisy systems.

POWER DISSIPATION AND EFFICIENCY

The major benefit of a Class D amplifier is increased efficiency

versus a Class AB. The efficiency of the LM48413 is attributed

to the region of operation of the transistors in the output stage.

The Class D output stage acts as current steering switches,

consuming negligible amounts of power compared to a Class

AB amplifier. Most of the power loss associated with the out-

put stage is due to the IR loss of the MOSFET on-resistance,

along with switching losses due to gate charge.

PROPER SELECTION OF EXTERNAL COMPONENTS

Power Supply Bypassing/Filtering

Proper power supply bypassing is important for low noise

performance and high PSRR. Place the 1μF supply bypass

capacitor as close to the device as possible. Traditionally, a

pair of bypass capacitors with typical value 0.1μF and 10μF

are applied to the supply rail for increasing stability. Never-

theless, these capacitors do not eliminate the need for by-

passing of the LM48413 supply pins.

Input Capacitor Selection

Input capacitors may be required for some applications, or

when the audio source is single-ended. Input capacitors block

the DC component of the audio signal, eliminating any conflict

between the DC component of the audio source and the bias

voltage of the LM48413. The input capacitors create a high-

pass filter with the input resistance RIN. The -3dB point of the

high-pass filter is found using Equation 1 below.

f = 1 / 2πRINCIN (Hz) (1)

The input capacitors can also be used to remove low fre-

quency content from the audio signal. When the LM48413 is

using a single-ended source, power supply noise on the

ground is seen as an input signal. Setting the high-pass filter

point above the power supply noise frequencies, 217Hz in a

GSM phone, for example, filters out the noise such that it is

not amplified and heard on the output. Capacitors with a tol-

erance of 10% or better are recommended for impedance

matching and improved CMRR and PSRR.

National 3D Enhancement

The LM48413 features National’s 3D enhancement effect that

widens the perceived soundstage of a stereo audio signal.

The 3D enhancement increases the apparent stereo channel

separation, improving audio reproduction whenever the left

and right speakers are too close to one another.

An external RC network shown in Figure 1 is required to en-

able the 3D effect. Because the LM48413 is a fully differential

amplifier, there are two separate RC networks, one for each

stereo input pair (INL+ and INR+, and INL- and INR-). Set

3DEN high to enable the 3D effect. Set 3DEN low to disable

the 3D effect.

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LM48413

The 3D RC network acts as a high-pass filter. The amount of

the 3D effect is set by the R3D resistor. Decreasing the value

of R3D increases the 3D effect. The C3D capacitor sets the

frequency at which the 3D effect occurs. Increasing the value

of C3D decreases the low frequency cutoff point, extending

the 3D effect over a wider bandwidth. The low frequency cut-

off point is given by Equation 2:

f3D(–3dB) = 1 / 2π(R3D)(C3D) (Hz) (2)

Enabling the 3D effect increase the gain by a factor of (1

+40kΩ/R3D). Setting R3D to 40kΩ results in a gain increase of

6dB whenever the 3D effect is enabled. The Equation (2)

holds for both differential and single-end configuration. The

recommended tolerance of the resistor value and capacitor

value of the two RC networks are 5% and 10% respectively.

Tolerance out of this range may affect the 3D gain and low

frequency cut-off point too much. The desired sound quality

of the 3D effect may not be obtained consequently.

SINGLE-ENDED AUDIO AMPLIFIER CONFIGURATION

The LM48413 is compatible with single-ended sources. When

configured for single-ended inputs, input capacitors must be

used to block and DC component at the input of the device.

Figure 2 shows the typical single-ended applications circuit.

30063525

FIGURE 2. Single-Ended Circuit Diagram

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LM48413

AUDIO AMPLIFIER GAIN

The LM48413 has a fix gain value 24dB which is suitable for

ordinary audio applications. To reduce the amplifier gain, in-

sert two pairs of external input resistors with same value

before the IC’s input signal pins. Figure 3 show the configu-

ration of these input resistors and the amplifier’s internal gain

setting. Accordingly, the overall amplifier gain is given by

Equation 3:

AV = 2 * (160k) / (20k + RIN ) (3)

For example, if the gain to be set is 12dB, then AV is equal to

4. Thus, Equation (3) the input resistors' value RIN = [(2 *

160k)/4] –20k = 60kΩ.

30063528

FIGURE 3. Audio Amplifier Gain Setting

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LM48413

PCB LAYOUT GUIDELINES

As output power increases, interconnect resistance (PCB

traces and wires) between the amplifier, load and power sup-

ply create a voltage drop. The voltage loss due to the traces

between the LM48413 and the load results in lower output

power and decreased efficiency. Higher trace resistance be-

tween the supply and the LM48413 has the same effect as a

poorly regulated supply, increasing ripple on the supply line,

and reducing peak output power. The effects of residual trace

resistance increases as output current increases due to high-

er output power, decreased load impedance or both. To main-

tain the highest output voltage swing and corresponding peak

output power, the PCB traces that connect the output pins to

the load and the supply pins to the power supply should be

as wide as possible to minimize trace resistance.

The use of power and ground planes will give the best THD

+N performance. In addition to reducing trace resistance, the

use of power planes creates parasitic capacitors that help to

filter the power supply line.

The inductive nature of the transducer load can also result in

overshoot on one or both edges, clamped by the parasitic

diodes to GND and VDD in each case. From an EMI stand-

point, this is an aggressive waveform that can radiate or

conduct to other components in the system and cause inter-

ference. It is essential to keep the power and output traces

short and well shielded if possible. Use of ground planes

beads and micros-strip layout techniques are all useful in pre-

venting unwanted interference.

As the distance from the LM48413 and the speaker increases,

the amount of EMI radiation increases due to the output wires

or traces acting as antennas. The EMI output spectrums of

LM48413 evaluation board connected with different speaker

cable lengths to an 8Ω load were measured (See Typical

Performance Characteristics). Lengths from 3 inches to 12

inches are shown all fall within the limit of the FCC Class B

requirement.

THD+N MEASUREMENT

Class D amplifiers, by design, switch their output power de-

vices at a much higher frequency than the accepted audio

range (20Hz – 22kHz). Alternately switching the output volt-

age between VDD and GND allows the LM48413 to operate

at much higher efficiency. However, it also increases the out-

of-band noise. Since THD+N measurement is a bandwidth

limited measurement, it can be significantly affected by out-

of-band noise, resulting in a higher than expected THD+N

measurement. To achieve a more accurate measurement of

THD+N, the test equipment’s input bandwidth must be limited.

The input filter limits the out-of-band noise resulting in a more

relevant THD+N value. A low-pass filter with a cut-off at

28kHz was used in addition to the internal filter of the THD+N

measurement equipment (See Figure 4).

In real applications, the output filters are not necessary since

the speakers will act as low-pass filters blocking the remaining

switching noise and smoothing the output signals. Instead of

connecting the LM48413's BTL outputs to speakers during

measurements, the 28kHz low-pass filter is used as shown in

Figure 4. This measurement technique also applies to mea-

surements such as PSRR, CMRR, and output power.

30063540

FIGURE 4. THD+N Measurement Test Setup

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LM48413

Bill Of Materials

TABLE 1. LM48413 Demonstration Board Bill of Materials

Item Designator Description Part Number Qty Value Recommended

Supplier

1 U1 Stereo Class-D LM48413TL 1 National

Semiconductor

2 R1, R2 Resistor (0603) 2 4.7kΩ ± 5% Towa

3 C1, C2, C3, C8 Ceramic Capacitor

(0603) X7R GRM188R71C105KA01D 4 1µF ± 10%, 25V Murata

4 C4, C5, C6, C7 Ceramic Capacitor

(1206) X7R C3216X741H105K 4 1µF ± 10%, 25V TDK

5 C9 Tantium Capacitor

(1210) 594D106X0025B2T 1 10µF ± 10%, 25V Vishay

6 JP5, JP6, JP7 Header 2-pin 3

7 JP1, JP2 Header 3-pin 2

8 JP3, JP4 Header 4-pin 2

9 R3, R4 Potentiometer ST-4EB100k 2 100kΩCopal

Electronics

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LM48413

Demonstration Board Schematic

30063510

FIGURE 5. LM48413 Demonstration Board Schematic

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LM48413

Demonstration Board Layout

30063511

Top Silkscreen

30063515

Top Layer

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LM48413

30063513

Middle Layer 1

30063514

Middle Layer 2

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LM48413

30063512

Bottom Layer

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LM48413

Revision Table

Rev Date Description

1.0 11/19/08 Initial release.

1.01 01/08/09 Text edits.

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LM48413

Physical Dimensions inches (millimeters) unless otherwise noted

MicroSMD 18 Bump Package

Order Number LM48413TL, LM48413TLX

NS Package Number TLA18CBA

X1 = 2.047mm ±0.030mm X2 = 2.250mm ±0.030mm X3 = 0.60mm ±0.075mm

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LM48413

Notes

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LM48413

Notes

LM48413 Ultra Low EMI, Filterless, 1.2W Stereo Class D Audio Power Amplifier with E2S and

National 3D Enhancement

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