ON Semiconductor BC337, BC337-16, BC337-25, BC337-40, BC338-25 Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit Collector-Emitter Voltage VCEO 45 25 Vdc Collector-Base Voltage VCBO 50 30 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 800 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watt mW/C TJ, Tstg -55 to +150 C Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W Operating and Storage Junction Temperature Range 1 2 3 CASE 29-04, STYLE 17 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic COLLECTOR 1 2 BASE 3 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max 45 25 - - - - 50 30 - - - - 5.0 - - - - - - 100 100 - - - - 100 100 - - 100 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 10 mA, IB = 0) Collector-Emitter Breakdown Voltage (IC = 100 A, IE = 0) V(BR)CEO BC337 BC338 V(BR)CES BC337 BC338 Emitter-Base Breakdown Voltage (IE = 10 A, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 30 V, IE = 0) (VCB = 20 V, IE = 0) BC337 BC338 Collector Cutoff Current (VCE = 45 V, VBE = 0) (VCE = 25 V, VBE = 0) BC337 BC338 October, 2001 - Rev. 2 Vdc ICBO IEBO 1 Vdc nAdc ICES Emitter Cutoff Current (VEB = 4.0 V, IC = 0) Semiconductor Components Industries, LLC, 2001 Vdc nAdc nAdc Publication Order Number: BC337/D BC337, BC337-16, BC337-25, BC337-40, BC338-25 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max 100 100 160 250 60 - - - - - 630 250 400 630 - Unit ON CHARACTERISTICS DC Current Gain (IC = 100 mA, VCE = 1.0 V) hFE - BC337 BC337-16 BC337-25/BC338-25 BC337-40 (IC = 300 mA, VCE = 1.0 V) Base-Emitter On Voltage (IC = 300 mA, VCE = 1.0 V) VBE(on) - - 1.2 Vdc Collector-Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) VCE(sat) - - 0.7 Vdc Cob - 15 - pF fT - 210 - MHz SMALL-SIGNAL CHARACTERISTICS Output Capacitance (VCB = 10 V, IE = 0, f = 1.0 MHz) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Current-Gain - Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.05 0.07 0.02 0.05 0.03 P(pk) SINGLE PULSE 0.01 t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.02 0.01 0.001 JC(t) = (t) JC JC = 100C/W MAX JA(t) = r(t) JA JA = 375C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) JC(t) 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t, TIME (SECONDS) 1.0 Figure 1. Thermal Response http://onsemi.com 2 2.0 5.0 10 20 50 100 BC337, BC337-16, BC337-25, BC337-40, BC338-25 1.0 s 1.0 ms 1000 TJ = 135C 100 s hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) 1000 dc TC = 25C dc TA = 25C 100 10 1.0 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT (APPLIES BELOW RATED VCEO) 3.0 10 30 VCE, COLLECTOR-EMITTER VOLTAGE VCE = 1 V TJ = 25C 100 10 0.1 100 1.0 10 100 IC, COLLECTOR CURRENT (AMP) Figure 3. DC Current Gain 1.0 1.0 TJ = 25C TA = 25C 0.8 0.8 V, VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 2. Active Region - Safe Operating Area 0.6 IC = 10 mA 0.4 100 mA 300 mA 500 mA VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 1 V 0.6 0.4 0.2 0.2 VCE(sat) @ IC/IB = 10 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 0 100 1 Figure 4. Saturation Region 10 100 IC, COLLECTOR CURRENT (mA) 1000 Figure 5. "On" Voltages 100 +1 VC for VCE(sat) 0 C, CAPACITANCE (pF) V, TEMPERATURE COEFFICIENTS (mV/C) 1000 -1 VB for VBE -2 1 10 100 IC, COLLECTOR CURRENT (mA) Cib 10 Cob 1 0.1 1000 Figure 6. Temperature Coefficients 1 10 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitances http://onsemi.com 3 100 BC337, BC337-16, BC337-25, BC337-40, BC338-25 PACKAGE DIMENSIONS CASE 029-04 (TO-226AA) ISSUE AD A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X-X N N STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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