INA821IDR - TEXAS INSTRUMENTS - Datasheet.Technology

December, 2018 − Rev. 4

1Publication Order Number:

NCP177/D

NCP177

Linear Voltage Regulator

Fast Transient Response

500 mA with Enable

The NCP177 is CMOS LDO regulator featuring 500 mA output

current. The input voltage is as low as 1.6 V and the output voltage can

be set from 0.7 V.

Features

•Operating Input Voltage Range: 1.6 V to 5.5 V

•Output Voltage Range: 0.7 V to 3.6 V

•Quiescent Current typ. 60 mA

•Low Dropout: 200 mV Typ. at 500 mA, VOUT−NOM = 1.8 V

•High Output Voltage Accuracy ±0.8%

•Stable with Small 1 mF Ceramic Capacitors

•Over−current Protection

•Thermal Shutdown Protection: 175°C

•With (NCP177A) and Without (NCP177B) Output Discharge

Function

•Available in XDFN4 1 mm x 1 mm x 0.4 mm Package

•This is a Pb−Free Device

Typical Applications

•Battery Powered Equipment

•Portable Communication Equipment

•Cameras, Image Sensors and Camcorders

Figure 1. Typical Application

Schematic

NCP177

OUT

GND

COUT

1 μF

CIN

1 μF

OFF

VIN VOUT

MARKING DIAGRAM

XDFN4

CASE 711AJ

See detailed ordering, marking and shipping information on

page 10 of this data sheet.

ORDERING INFORMATION

(Top View)

www.onsemi.com

XX = Specific Device Code

M = Date Code

XX M

EPAD

OUT GND

IN EN

PINOUT DIAGRAM

NCP177

www.onsemi.com

Figure 2. Internal Block Diagram

OUT

GND

PROG . VOLTAGE

REFERENCE AND

SOFT −START

0.7 V

THERMAL

SHUTDOWN

NCP177A (with output active discharge) NCP177B (without output active discharge)

OUT

GND

PROG . VOLTAGE

REFERENCE AND

SOFT −START

0.7 V

THERMAL

SHUTDOWN

PIN FUNCTION DESCRIPTION

Pin No. Pin Name Description

1 OUT Regulated output voltage pin

2 GND Power supply ground pin

3 EN Enable pin (active “H”)

4 IN Power supply input voltage pin

−EPAD Exposed pad should be tied to ground plane for better power dissipation

ABSOLUTE MAXIMUM RATINGS

Rating Symbol Value Unit

Input Voltage (Note 1) IN −0.3 to 6.0 V

Output Voltage OUT −0.3 to VIN + 0.3 V

Chip Enable Input EN −0.3 to 6.0 V

Output Current IOUT Internally Limited mA

Maximum Junction Temperature TJ(MAX) 150 °C

Storage Temperature TSTG −55 to 150 °C

ESD Capability, Human Body Model (Note 2) ESDHBM 2000 V

ESD Capability, Machine Model (Note 2) ESDMM 200 V

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.

2. This device series incorporates ESD protection and is tested by the following methods:

ESD Human Body Model tested per JESD22−A114

ESD Machine Model tested per JESD22−A115

Latchup Current Maximum Rating tested per JEDEC standard: JESD78

THERMAL CHARACTERISTICS

Rating Symbol Value Unit

Thermal Characteristics, XDFN4 (Note 3)

Thermal Resistance, Junction−to−Air

RqJA 223 °C/W

3. Measured according to JEDEC board specification. Detailed description of the board can be found in JESD51−7

NCP177

www.onsemi.com

ELECTRICAL CHARACTERISTICS

VIN = VOUT−NOM + 0.5 V or VIN = 1.6 V (whichever is higher), VEN = 1.2 V, IOUT = 1 mA, CIN = COUT = 1.0 mF, TJ = 25°C

The specifications in bold are guaranteed at −40°C ≤ TJ ≤ 85°C. (Note 4)

Parameter Test Conditions Symbol Min Typ Max Unit

Input Voltage VIN 1.6 5.5 V

Output Voltage VOUT_NOM ≥ 1.8 V TJ = +25°CVOUT −0.8 0.8 %

−40°C ≤ TJ ≤ 85°C−2.0 1.0

VOUT_NOM < 1.8 V TJ = +25°C−1.2 1.2

−40°C ≤ TJ ≤ 85°C−2.5 1.5

Line Regulation VIN = VOUT−NOM + 0.5 V to 5.25 V

VIN ≥ 1.6 V

LineReg 0.02 0.1 %/V

Load Regulation 1 mA ≤ IOUT ≤ 500 mA LoadReg 1 10 mV

Dropout Voltage (Note 5) IOUT = 500 mA 1.4 V ≤ VOUT < 1.8 V VDO 295 380 mV

1.8 V ≤ VOUT < 2.1 V 200 285

2.1 V ≤ VOUT < 2.5 V 160 240

2.5 V ≤ VOUT < 3.0 V 130 200

3.0 V ≤ VOUT < 3.6 V 110 175

Quiescent Current IOUT = 0 mA IQ60 90 mA

Standby Current VEN = 0 V ISTBY 0.1 1mA

Output Current Limit VOUT = VOUT−NOM − 100 mV IOUT 510 800 mA

Short Circuit Current VOUT = 0 V ISC 510 800 mA

EN Pin Threshold Voltage EN Input Voltage “H” VENH 1.0 V

EN Input Voltage “L” VENL 0.4

Enable Input Current VEN = VIN = 5.5 V IEN 0.15 0.6 mA

Power Supply Rejection Ratio f = 1 kHz, Ripple 0.2 Vp−p,

VIN = VOUT−NOM + 1.0 V, IOUT = 30 mA

(VOUT ≤ 2.0 V, VIN = 3.0 V)

PSRR 75 dB

Output Noise f = 10 Hz to 100 kHz 54 mVRMS

Output Discharge Resistance

(NCP177A option only)

VIN = 4.0 V, VEN = 0 V, VOUT = VOUT−NOM RACTDIS 60 W

Thermal Shutdown Temperature Temperature rising from 25°C TSD_TEMP 175 °C

Thermal Shutdown Hysteresis Temperature falling from TSD_TEMP TSD_HYST 20 °C

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at TA = 25°C.

Low duty cycle pulse techniques are used during the testing to maintain the junction temperature as close to ambient as possible.

5. Measured when the output voltage falls 3% below the nominal output voltage (the voltage measured under the condition VIN = VOUT−NOM

+ 0.5 V).

NCP177

www.onsemi.com

TYPICAL CHARACTERISTICS

VIN = VOUT−NOM + 0.5 V or VIN = 1.6 V (whichever is higher), VEN = 1.2 V, IOUT = 1 mA, CIN = COUT = 1.0 mF, TJ = 25°C

Figure 3. Output Voltage vs. Temperature Figure 4. Output Voltage vs. Temperature

TEMPERATURE (°C) TEMPERATURE (°C)

806040200−20−40

0.683

0.688

0.693

0.698

0.703

0.708

806040200−20−40

1.764

1.774

1.784

1.794

1.804

1.814

Figure 5. Output Voltage vs. Temperature Figure 6. Line Regulation vs. Temperature

TEMPERATURE (°C) TEMPERATURE (°C)

806040200−20−40

3.234

3.244

3.264

3.274

3.294

3.304

3.324

806040200−20−40

−0.10

−0.08

−0.04

−0.02

0.02

0.06

0.10

Figure 7. Load Regulation vs. Temperature Figure 8. Dropout Voltage vs. Output Current

TEMPERATURE (°C) OUTPUT CURRENT (mA)

806040200−20−40

−5

−4

−2

−1

5004003002001000

100

150

200

225

275

OUTPUT VOLTAGE (V)

LINE REGULATION (%/V)

LOAD REGULATION (mV)

DROPOUT VOLTAGE (mV)

3.254

3.284

3.314

VOUT−NOM = 0.7 V VOUT−NOM = 1.8 V

VOUT−NOM = 3.3 V −0.06

0.04

0.08 VOUT−NOM = 3.3 V

VIN = 3.8 V to 5.25 V

VOUT−NOM = 3.3 V

IOUT = 1 mA to 500 mA

−3

125

175

250 VOUT−NOM = 1.8 V

TJ = 85°C

TJ = 25°C

TJ = −40°C

NCP177

www.onsemi.com

TYPICAL CHARACTERISTICS

VIN = VOUT−NOM + 0.5 V or VIN = 1.6 V (whichever is higher), VEN = 1.2 V, IOUT = 1 mA, CIN = COUT = 1.0 mF, TJ = 25°C

Figure 9. Dropout Voltage vs. Temperature Figure 10. Dropout Voltage vs. Output Current

TEMPERATURE (°C) OUTPUT CURRENT (mA)

806040200−20−40

100

150

200

225

275

5004003002001000

100

120

140

160

Figure 11. Dropout Voltage vs. Temperature Figure 12. Standby Current vs. Temperature

TEMPERATURE (°C) TEMPERATURE (°C)

806040200−20−40

100

140

160

806040200−20−40

0.1

0.3

0.4

0.6

0.7

0.8

1.0

Figure 13. Quiescent Current vs. Temperature Figure 14. Quiescent Current vs. Input Voltage

TEMPERATURE (°C) INPUT VOLTAGE (V)

806040200−20−40

5.04.5 5.54.03.53.02.52.0

DROPOUT VOLTAGE (mV)

STANDBY CURRENT (mA)

QUIESCENT CURRENT (mA)

VOUT−NOM = 1.8 V

125

175

250

IOUT = 10 mA

IOUT = 100 mA

IOUT = 250 mA

IOUT = 500 mA

VOUT−NOM = 3.3 V

TJ = 85°C

TJ = 25°C

TJ = −40°C

VOUT−NOM = 3.3 V

IOUT = 10 mA

IOUT = 100 mA

IOUT = 250 mA

IOUT = 500 mA

120

0.2

0.5

0.9 VEN = 0 V

VOUT−NOM = 0.7 V to 3.3 V

VOUT−NOM = 0.7 V

IOUT = 0 mA

VOUT−NOM = 3.3 V

VOUT−NOM = 1.8 V

IOUT = 0 mA

TJ = 85°C

TJ = 25°C

TJ = −40°C

VOUT−NOM = 1.8 V

NCP177

www.onsemi.com

TYPICAL CHARACTERISTICS

VIN = VOUT−NOM + 0.5 V or VIN = 1.6 V (whichever is higher), VEN = 1.2 V, IOUT = 1 mA, CIN = COUT = 1.0 mF, TJ = 25°C

Figure 15. Ground Current vs. Output Current Figure 16. Short Circuit Current vs.

Temperature

OUTPUT CURRENT (mA) TEMPERATURE (°C)

5004003002001000

100

150

200

250

300

350

806040200−20−40

500

550

650

700

750

800

900

1000

Figure 17. Output Current Limit vs.

Temperature

Figure 18. Enable Threshold Voltage vs.

Temperature

TEMPERATURE (°C) TEMPERATURE (°C)

806040200−20−40

500

550

650

700

800

900

950

1000

806040200−20−40

0.4

0.5

0.6

0.7

0.9

0.8

1.0

Figure 19. Enable Input Current vs.

Temperature

Figure 20. Output Discharge Resistance vs.

Temperature (NCP177A option only)

TEMPERATURE (°C) TEMPERATURE (°C)

806040200−20−40

0.1

0.2

0.3

0.4

0.5

0.6

806040200−20−40

GROUND CURRENT (mA)

SHORT CIRCUIT CURRENT (mA)

OUTPUT CURRENT LIMIT (mA)

ENABLE THRESHOLD VOLTAGE (V)

ENABLE INPUT CURRENT (mA)

OUTPUT DISCHARGE RESISTANCE (W)

VOUT−NOM = 1.8 V

TJ = 85°C

TJ = 25°C

TJ = −40°C

VOUT−FORCED = 0 V

600

850

950

VOUT−NOM = 0.7 V

1.4 V

3.3 V

1.8 V

VOUT−FORCED = VOUT−NOM − 0.1 V

VOUT−NOM = 0.7 V

1.4 V

3.3 V

1.8 V

600

750

850

VOUT−NOM = 1.8 V

OFF −> ON

ON −> OFF

VOUT−NOM = 1.8 V

VIN = 5.5 V

VEN = 5.5 V

VOUT−NOM = 1.8 V

VIN = 4.0 V

VEN = 0 V

VOUT−FORCED = VOUT−NOM

NCP177

www.onsemi.com

TYPICAL CHARACTERISTICS

VIN = VOUT−NOM + 0.5 V or VIN = 1.6 V (whichever is higher), VEN = 1.2 V, IOUT = 1 mA, CIN = COUT = 1.0 mF, TJ = 25°C

Figure 21. Power Supply Rejection Ratio Figure 22. Output Voltage Noise Spectral

Density

FREQUENCY (Hz) FREQUENCY (Hz)

10M1M100k10k1k10010

1M100k10k1k10010

Figure 23. Turn−ON/OFF − VIN Driven (slow) Figure 24. Turn−ON − VIN Driven (fast)

Figure 25. Turn−ON/OFF − EN Driven Figure 26. Line Transient Response

PSRR (dB)

OUTPUT VOLTAGE NOISE (mV/√Hz)

1 ms/div

1 V/div

VOUT−NOM = 1.8 V

50 mA/div

VIN

IIN

VOUT

50 ms/div

VOUT−NOM = 1.8 V

50 mA/div

IIN

VIN

VOUT

1 ms/div

2 V/div

VOUT−NOM = 1.8 V

500 mV/div

VIN

IIN

VOUT

Without output discharge

With output discharge

5 ms/div

VOUT−NOM = 1.8 V

3.3 V

500 mV/div

VIN

VOUT

tR = tF = 1 ms

VEN

5 mV/div

2.3 V

1.8 V

COUT = 1 mF X7R 0805

VOUT_NOM = 1.8 V, VIN = 3.0 V

VOUT_NOM = 3.3 V, VIN = 4.3 V

VOUT_NOM = 1.8 V, VIN = 3.0 V

VOUT_NOM = 3.3 V, VIN = 4.3 V

COUT = 1 mF X7R 0805

Integral Noise:

10 Hz − 100 kHz: 54 mVrms

10 Hz − 1 MHz: 62 mVrms

500 mV/div 1 V/div

NCP177

www.onsemi.com

TYPICAL CHARACTERISTICS

VIN = VOUT−NOM + 0.5 V or VIN = 1.6 V (whichever is higher), VEN = 1.2 V, IOUT = 1 mA, CIN = COUT = 1.0 mF, TJ = 25°C

Figure 27. Load Transient Response Figure 28. qJA and PD(MAX) vs. Copper Area

20 ms/div

PCB COPPER AREA (mm2)

6005004003002001000

190

210

250

270

290

330

350

370

1 V/div

qJA, JUNCTION TO AMBIENT

THERMAL RESISTANCE (°C/W)

VOUT−NOM = 1.8 V

1 mA

1.8 V

500 mA

200 mA/div50 mV/div

VIN

IOUT

VOUT

310

230

0.1

0.3

0.4

0.5

0.7

0.6

0.2

qJA, 1 oz Cu

qJA, 2 oz Cu

PD(MAX), 1 oz Cu

PD(MAX), 2 oz Cu

PD(MAX), MAXIMUM POWER DISSIPATION (W)

tR = tF = 1 ms

TA = 25°C

TJ = 125°C (for PD(MAX) curve)

APPLICATIONS INFORMATION

General

The NCP177 is a high performance 500 mA low dropout

linear regulator (LDO) delivering excellent noise and

dynamic performance. Thanks to its adaptive ground current

behavior the device consumes only 60 mA of quiescent

current (no−load condition).

The regulator features low noise of 48 mVRMS, PSRR of

75 dB at 1 kHz and very good line/load transient

performance. Such excellent dynamic parameters, small

dropout voltage and small package size make the device an

ideal choice for powering the precision noise sensitive

circuitry in portable applications.

A logic EN input provides ON/OFF control of the output

voltage. When the EN is low the device consumes as low as

100 nA typ. from the IN pin.

The device is fully protected in case of output overload,

output short circuit condition or overheating, assuring a very

robust design.

Input Capacitor Selection (CIN)

Input capacitor connected as close as possible is necessary

to ensure device stability. The X7R or X5R capacitor should

be used for reliable performance over temperature range.

The value of the input capacitor should be 1 mF or greater for

the best dynamic performance. This capacitor will provide

a low impedance path for unwanted AC signals or noise

modulated onto the input voltage.

There is no requirement for the ESR of the input capacitor

but it is recommended to use ceramic capacitor for its low

ESR and ESL. A good input capacitor will limit the

influence of input trace inductance and source resistance

during load current changes.

Output Capacitor Selection (COUT)

The LDO requires an output capacitor connected as close

as possible to the output and ground pins. The recommended

capacitor value is 1 mF, ceramic X7R or X5R type due to its

low capacitance variations over the specified temperature

range. The LDO is designed to remain stable with minimum

effective capacitance of 0.8 mF. When selecting the capacitor

the changes with temperature, DC bias and package size

needs to be taken into account. Especially for small package

size capacitors such as 0201 the effective capacitance drops

rapidly with the applied DC bias voltage (refer the

capacitor’s datasheet for details).

There is no requirement for the minimum value of

equivalent series resistance (ESR) for the COUT but the

maximum value of ESR should be less than 0.5 W. Larger

capacitance and lower ESR improves the load transient

response and high frequency PSRR. Only ceramic

capacitors are recommended, the other types like tantalum

capacitors not due to their large ESR.

Enable Operation

The LDO uses the EN pin to enable/disable its operation

and to deactivate/activate the output discharge function

(A−version only).

If the EN pin voltage is < 0.4 V the device is disabled and

the pass transistor is turned off so there is no current flow

between the IN and OUT pins. On A−version the active

discharge transistor is active so the output voltage is pulled

to GND through 60 W (typ.) resistor.

If the EN pin voltage is > 1.0 V the device is enabled and

regulates the output voltage. The active discharge transistor

is turned off.

NCP177

www.onsemi.com

The EN pin has internal pull−down current source with

value of 300 nA typ. which assures the device is turned off

when the EN pin is unconnected. In case when the EN

function isn’t required the EN pin should be tied directly to

IN pin.

Output Current Limit

Output current is internally limited to a 750 mA typ. The

LDO will source this current when the output voltage drops

down from the nominal output voltage (test condition is

VOUT−NOM – 100 mV). If the output voltage is shorted to

ground, the short circuit protection will limit the output

current to 700 mA typ. The current limit and short circuit

protection will work properly over the whole temperature

and input voltage ranges. There is no limitation for the short

circuit duration.

Thermal Shutdown

When the LDO’s die temperature exceeds the thermal

shutdown threshold value the device is internally disabled.

The IC will remain in this state until the die temperature

decreases by value called thermal shutdown hysteresis.

Once the IC temperature falls this way the LDO is back

enabled. The thermal shutdown feature provides the

protection against overheating due to some application

failure and it is not intended to be used as a normal working

function.

Power Dissipation

Power dissipation caused by voltage drop across the LDO

and by the output current flowing through the device needs

to be dissipated out from the chip. The maximum power

dissipation is dependent on the PCB layout, number of used

Cu layers, Cu layers thickness and the ambient temperature.

The maximum power dissipation can be computed by

following equation:

PD(MAX) +TJ*TA

qJA +125 *TA

qJA

[W] (eq. 1)

Where: (TJ − TA) is the temperature difference between the

junction and ambient temperatures and θJA is the thermal

resistance (dependent on the PCB as mentioned above).

For reliable operation junction temperature should be

limited do +125°C.

The power dissipated by the LDO for given application

conditions can be calculated by the next equation:

PD+VIN @IGND )ǒVIN *VOUTǓ@IOUT [W] (eq. 2)

Where: IGND is the LDO’s ground current, dependent on the

output load current.

Connecting the exposed pad and N/C pin to a large ground

planes helps to dissipate the heat from the chip.

The relation of θJA and PD(MAX) to PCB copper area and

Cu layer thickness could be seen on the Figure 26.

Reverse Current

The PMOS pass transistor has an inherent body diode

which will be forward biased in the case when VOUT > VIN.

Due to this fact in cases, where the extended reverse current

condition can be anticipated the device may require

additional external protection.

Power Supply Rejection Ratio

The LDO features very high power supply rejection ratio.

The PSRR at higher frequencies (in the range above

100 kHz) can be tuned by the selection of COUT capacitor

and proper PCB layout. A simple LC filter could be added

to the LDO’s IN pin for further PSRR improvement.

Enable Turn−On Time

The enable turn−on time is defined as the time from EN

assertion to the point in which VOUT will reach 98% of its

nominal value. This time is dependent on various

application conditions such as VOUT−NOM, COUT and TA.

PCB Layout Recommendations

To obtain good transient performance and good regulation

characteristics place CIN and COUT capacitors as close as

possible to the device pins and make the PCB traces wide.

In order to minimize the solution size, use 0402 or 0201

capacitors size with appropriate effective capacitance.

Larger copper area connected to the pins will also improve

the device thermal resistance. The actual power dissipation

can be calculated from the equation above (Power

Dissipation section). Exposed pad and N/C pin should be

tied to the ground plane for good power dissipation.

NCP177

www.onsemi.com

ORDERING INFORMATION

Part Number Voltage Option Option Marking Package Shipping†

NCP177AMX070TCG 0.70 V

With output discharge

XDFN−4

(Pb−Free) 3000 / Tape & Reel

NCP177AMX090TCG 0.90 V JM

NCP177AMX100TCG 1.00 V JC

NCP177AMX110TCG 1.10 V JD

NCP177AMX120TCG 1.20 V JE

NCP177AMX125TCG 1.25 V JK

NCP177AMX135TCG 1.35 V JF

NCP177AMX150TCG 1.50 V JG

NCP177AMX180TCG 1.80 V JH

NCP177AMX330TCG 3.30 V JJ

NCP177BMX070TCG 0.70 V

Without output discharge

NCP177BMX100TCG 1.00 V HC

NCP177BMX110TCG 1.10 V HD

NCP177BMX120TCG 1.20 V HE

NCP177BMX125TCG 1.25 V HL

NCP177BMX135TCG 1.35 V HF

NCP177BMX150TCG 1.50 V HG

NCP177BMX180TCG 1.80 V HH

NCP177BMX330TCG 3.30 V HJ

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

NCP177

www.onsemi.com

PACKAGE DIMENSIONS

XDFN4 1.0x1.0, 0.65P

CASE 711AJ

ISSUE A

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. DIMENSION b APPLIES TO PLATED TERMINAL

AND IS MEASURED BETWEEN 0.15 AND

0.20 mm FROM THE TERMINAL TIPS.

4. COPLANARITY APPLIES TO THE EXPOSED

PAD AS WELL AS THE TERMINALS.

ÉÉ

BOTTOM VIEW

NOTE 3

2X 0.05 C

PIN ONE

REFERENCE

TOP VIEW

2X 0.05 C

(A3)

0.05 C

CSEATING

PLANE

SIDE VIEW

DIM MIN MAX

MILLIMETERS

A0.33 0.43

A1 0.00 0.05

A3 0.10 REF

b0.15 0.25

D1.00 BSC

D2 0.43 0.53

E1.00 BSC

e0.65 BSC

L0.20 0.30

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

MOUNTING FOOTPRINT*

1.20

0.26

0.24 4X

DIMENSIONS: MILLIMETERS

0.39

RECOMMENDED

PACKAGE

OUTLINE

NOTE 4

e/2

45 5

0.05 BC

0.65

PITCH

DETAIL A

b2 0.02 0.12

L2 0.07 0.17

0.52

0.11

L24X

DETAIL A

b24X

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

NCP177/D

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor

19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your local

Sales Representative

◊