2N2219A Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: * General purpose * Low power * NPN silicon transistor * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N2219AJ) * JANTX level (2N2219AJX) * JANTXV level (2N2219AJV) * JANS level (2N2219AJS) * JANSR level (2N2219AJSR) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method Features 2072 for JANTXV and JANS * * * * * Radiation testing (total dose) upon request Hermetically sealed TO-39 metal can Also available in chip configuration Chip geometry 0400 Reference document: MIL-PRF-19500/251 Benefits * Qualification Levels: JAN, JANTX, JANTXV, JANS and JANSR * Radiation testing available Please contact SEMICOA for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage TC = 25C unless otherwise specified Symbol VCEO Rating 50 Collector-Base Voltage VCBO 75 Unit Volts Volts Emitter-Base Voltage VEBO 6 Volts Collector Current, Continuous IC 800 mA Power Dissipation, TA = 25OC Derate linearly above 25OC PT 0.8 4.6 Power Dissipation, TC = 25OC Derate linearly above 25OC PT 3.0 17.0 W mW/C W mW/C Operating Junction Temperature TJ -55 to +200 C TSTG -55 to +200 C Storage Temperature Copyright 2010 Rev. L SEMICOA Corporation 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 1 2N2219A Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Collector-Emitter Breakdown Voltage Symbol V(BR)CEO Test Conditions IC = 10 mA Min Typ Max Units Volts 50 Collector-Base Cutoff Current ICBO1 VCB = 75 Volts 10 A Collector-Base Cutoff Current ICBO2 VCB = 60 Volts 10 nA Collector-Base Cutoff Current ICBO3 VCB = 60 Volts, TA = 150OC 10 A Collector-Emitter Cutoff Current ICES VCE = 50 Volts 10 nA Emitter-Base Cutoff Current IEBO1 VEB = 6 Volts 10 A Emitter-Base Cutoff Current IEBO2 VEB = 4 Volts 10 nA On Characteristics Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% Parameter DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Symbol hFE1 hFE2 hFE3 hFE4 hFE5 hFE6 VBEsat1 VBEsat2 VCEsat1 VCEsat2 Test Conditions IC = 0.1 mA, VCE = 10 Volts IC = 1.0 mA, VCE = 10 Volts IC = 10 mA, VCE = 10 Volts IC = 150 mA, VCE = 10 Volts IC = 500 mA, VCE = 10 Volts IC = 10 mA, VCE = 10 Volts TA = -55OC IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Min 30 75 100 100 30 35 Test Conditions VCE = 20 Volts, IC = 20 mA, f = 100 MHz VCE = 10 Volts, IC = 1 mA, f = 1 kHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 0.5 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz Min Typ Max Units 325 300 0.6 1.2 2.0 0.3 1.0 Volts Max Units Volts Dynamic Characteristics Parameter Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Symbol |hFE| hFE Open Circuit Output Capacitance COBO Open Circuit Input Capacitance CIBO Typ 2.5 12 75 8 pF 25 pF 35 300 ns Switching Characteristics Saturated Turn-On Time Saturated Turn-Off Time Copyright 2010 Rev.L tON tOFF SEMICOA Corporation 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com ns Page 2 of 2